High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic targe...High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.展开更多
Zinc tin oxide（ZTO） thin films, with zinc acetate and tributyltin chloride as raw materials, were deposited on glass substrates by the method of metal organic chemical vapor deposition（MOCVD）. The crystallization,...Zinc tin oxide（ZTO） thin films, with zinc acetate and tributyltin chloride as raw materials, were deposited on glass substrates by the method of metal organic chemical vapor deposition（MOCVD）. The crystallization, microstructure and optical properties were investigated by scanning electronic microscope（SEM）,X-ray diffraction（XRD） and ultraviolet-visible（UV-Vis）spectrophotometer. The results show that with the increase in Sn/Zn ratio, the crystal changes from wurtzite to rutile phase. When the ratio reaches 11：18,the intensity of Zn2SnO4 peaks appears to be the strongest and the optical band gap is about 3.27 eV. Calculated by the envelope method, the thickness of the ZTO thin films is 713.24 nm.Measured by UV-Vis spectrophotometer, the transmittance of the ZTO thin films reaches up to 80% in the wavelength range of 400-1000 nm when the Sn/Zn ratio is 7：18.展开更多
基金Funded by the Program for Changjiang Scholars and Innovative Research Team in University, Ministry of Education, China (No.IRT0547)
文摘High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.
基金financially supported by the National Natural Science Foundation of China(No.51342006)
文摘Zinc tin oxide（ZTO） thin films, with zinc acetate and tributyltin chloride as raw materials, were deposited on glass substrates by the method of metal organic chemical vapor deposition（MOCVD）. The crystallization, microstructure and optical properties were investigated by scanning electronic microscope（SEM）,X-ray diffraction（XRD） and ultraviolet-visible（UV-Vis）spectrophotometer. The results show that with the increase in Sn/Zn ratio, the crystal changes from wurtzite to rutile phase. When the ratio reaches 11：18,the intensity of Zn2SnO4 peaks appears to be the strongest and the optical band gap is about 3.27 eV. Calculated by the envelope method, the thickness of the ZTO thin films is 713.24 nm.Measured by UV-Vis spectrophotometer, the transmittance of the ZTO thin films reaches up to 80% in the wavelength range of 400-1000 nm when the Sn/Zn ratio is 7：18.
