P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy...P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.展开更多
The feasibility of a new fabrication route for N and Ga codoped p-type ZnO thin films on glass substrates, consisting of DC sputtering deposition of Zn3N2 ：Ga precursors followed by in situ oxidation in high purity o...The feasibility of a new fabrication route for N and Ga codoped p-type ZnO thin films on glass substrates, consisting of DC sputtering deposition of Zn3N2 ：Ga precursors followed by in situ oxidation in high purity oxygen, has been studied. The effects of oxidation temperature on the structural, optical and electrical properties of the samples were investigated by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, optical transmittance and Hall effect measurements. The results were compared to a control film without Ga. XRD analyses revealed that the Zn3N2 films entirely transformed into ZnO films after annealing Zn3N2 films in oxygen over 500 ℃ for 2 h. Hall effect measurements confirmed p-type conduction in N and Ga codoped ZnO films with a low resistivity of 19.8 Ω·cm, a high hole concentration of 4.6× 10^18 cm^-3 and a Hall mobility of 0.7 cm^2/（V·s）. These results demonstrate a promising approach to fabricate low resistivity p-type ZnO with high hole concentration.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 10775033 and 11075038
文摘P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.
基金supported by the National Natural Science Foundation of China(No.10574106)the Natural Science Foundation of Guangdong Province,China(No.8452404801021)the Natural Science Foundation of Zhanjiang Normal University,China(No.200801).
文摘The feasibility of a new fabrication route for N and Ga codoped p-type ZnO thin films on glass substrates, consisting of DC sputtering deposition of Zn3N2 ：Ga precursors followed by in situ oxidation in high purity oxygen, has been studied. The effects of oxidation temperature on the structural, optical and electrical properties of the samples were investigated by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, optical transmittance and Hall effect measurements. The results were compared to a control film without Ga. XRD analyses revealed that the Zn3N2 films entirely transformed into ZnO films after annealing Zn3N2 films in oxygen over 500 ℃ for 2 h. Hall effect measurements confirmed p-type conduction in N and Ga codoped ZnO films with a low resistivity of 19.8 Ω·cm, a high hole concentration of 4.6× 10^18 cm^-3 and a Hall mobility of 0.7 cm^2/（V·s）. These results demonstrate a promising approach to fabricate low resistivity p-type ZnO with high hole concentration.
