Morphologies and Structures of Perovskite Thin Film on Zn-face and O-face of ZnO Single Crystal

ZnO single crystal was used as the substrate to study the effect of ZnO crystal plane polarity on the morphology and structure of CH_3NH_3PbI_3（MAPbI_3） perovskite film and carrier transport properties,which is meaningful for improving ZnO-based perovskite solar cell. It is found that perovskite thin film has small grain size（about 190 nm） and high coverage rate on the O-face of ZnO single crystal,and the dominant exposed crystal plane of perovskite film is（110） plane. While the MAPbI_3 thin film has large grain size（about 1.03 μm） and low coverage rate on the Zn-face,and the（022） plane is dominantly exposed for the perovskite film. The injection of photogenerated electrons from MAPbI_3 film into the O-face of ZnO single crystal is faster and more effective than that to Zn-face. It is supposed that O-face is more suitable for ZnO single crystal based perovskite cell fabrication than Zn-face.

Preparation and Characterization of Multi Shape ZnO/PVDF Composite Materials

Two different morphologies of ZnO（lotus-shaped, rod-shaped） and ZnO/PVDF composite materials were prepared. The morphologies of ZnO and composite materials were characterized by scanning electron microscopy（SEM） and transmission electron microscopy（TEM）. Fourier transform infrared spectroscopy（FT-IR）, thermal gravimetry（TG）, and X-ray diffraction（XRD） were also used to characterize the chemical structures and phase composites of ZnO and ZnO/PVDF composite materials. Breakdown voltage, dielectric constant and dielectric loss of ZnO/PVDF composite materials were also tested. Microstructure analysis showed that ZnO nanoparticles dispersed uniformly in the matrix. And the dielectric constant expresses a significantly improvement while the dielectric loss and breakdown voltage expresses no significant change. Moreover, dielectric constant keeps an improvement tendency with increasing content of ZnO.

Influence factors on activity of Ru–Zn catalysts in selective hydrogenation of benzene

Selective hydrogenation of benzene is an atom economic green route to produce cyclohexene. The control of Zn species is the key to the catalytic performance of Ru–Zn catalysts. The influences of ZnO crystals on selective hydrogenation of benzene were explored. A series of Ru–Zn catalysts with different Zn contents and ZnO morphologies were prepared by changing the amount of NaOH in the co-precipitation process. The catalysts were characterized by N_2 physisorption, X-ray powder diffraction(XRD), inductively coupled plasma optical emission spectrometer(ICP-OES), scanning electron microscope(SEM), temperature-programmed reduction(H_2-TPR)and Malvern laser particle size analyzer. It is found that with increasing the amount of NaOH, the Zn content first increased then decreased, and the ZnO crystals changed from relatively thicker pyramidal-shaped crystals to slimmer needle-shaped crystals. The catalyst had the highest Zn content(22.1%) and strongest interaction between ZnO crystals and Ru particles at pH 10.6 of the solution after reduction. As a result, it had the lowest activity. The activity of Ru–Zn catalysts is affected by both the Zn content and the interaction between ZnO crystals and Ru particles. The effect of reduction time was also investigated. Prolonging the reduction time caused no significant growth of ZnO crystals but the aggregation of catalyst particles and growth of Ru nanocrystals, thus resulting in the decrease of catalytic activity.

Effects of Annealing Temperature on the Structural,Optical,and Electrical Properties of ZnO Thin Films Grown on n-Si<100>Substrates by the Sol–Gel Spin Coating Method

The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical properties of ZnO thin films annealed at 450,550,and 650 °C in the Ar gas atmosphere have been investigated in a systematic way.The XRD analysis shows a polycrystalline nature of the films at all three annealing temperatures.Further,the crystallite size is observed to be increased with the annealing temperature,whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the temperature.The surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing temperature.Optical properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28–3.15 eV as annealing temperature is increased from 450 to 650 °C,respectively.The fourpoint probe measurement shows a decrease in resistivity from 2：1 10 2to 8：1 10 4X cm with the increased temperature from 450 to 650 °C.The study could be useful for studying the sol–gel-derived ZnO thin film-based devices for various electronic,optoelectronic,and gas sensing applications.

Spray Pyrolysis Deposition of ZnO Thin Films from Zinc Chloride Precursor Solution at Different Substrate Temperatures

ZnO films were prepared at different substrate temperatures through spraying pyrolysis deposition of zinc chloride precursor onto glass substrate. Substrate temperature affects surface morphology of films and therefore their optical and electrical properties. All films are polycrystalline with Wurtzite crystal structure and preferentially grow along c-axis direction. Formation of ZnO rods start at about 500 °C. The diameter and length of rods deposited at 500 °C are350–500 and 550–700 nm, respectively. By increasing substrate temperature, film becomes more coverage and diameter of the rods reduces to 250–300 nm but their length increases to 1,000–1,200 nm, respectively. Optical transmission in visible region decreases with increasing substrate temperature. An ultraviolet emission and two visible emissions at 2.82 and2.37 eV are observed for photoluminescence spectra at room temperature. The resistivity of ZnO films increases with increasing substrate temperature due to surface morphology.