The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor...The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor increases with the content of Nd_2O_3 in the range of 0~0.04 (%,mol fraction). However when the content of Nd_2O_3 is more than 0.04 (%,mol fraction),the varistor voltage of ZnO varistor decreases with the content increase. The microstructure analysis indicates that a small amount of new compound with Nd exists at ZnO grain boundary and hinders the movement of grain boundary,which decreases the size of ZnO grain and makes the grain size and distribution homogeneous,as a result,additive (Nd_2O_3) raises the varistor voltage of the varistor greatly.展开更多
The zinc oxide varistor with a low threshold voltage and large grain size was derived with ZnO crystalline seeds from a molten salt process The chemical composition and I-V characteristics of single grains and single ...The zinc oxide varistor with a low threshold voltage and large grain size was derived with ZnO crystalline seeds from a molten salt process The chemical composition and I-V characteristics of single grains and single grain boundaries were determined by means of energy dispersive spectrum (EDS) and microcontact measurement respectively. Temperatu re dependence of dielectric loss at various frequencies and voltage dependence of capacitance were carefully measured. Based on these experimental data. the barrier heights of giain boundaries are estimated to be 0.2. 0.5 and 0.6 eV respectively corresponding to thick, th in and direct contact grain boundaries. In addition. a computerized electrical circuit simufation is employed in simulating I-V characteristics of single grain boundary within ZnO varistor. By adjustjng parameters of resistor and diode, a general agreement between the measured data and simulated curves is achieved展开更多
ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that...ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that this kind of ZnO powder has a high sintering activity. It is suitable for making the low voltage varistors. The Vc decreases with the increase of sintered temperature, when the In2O3 content is fixed(0. 98 %, mass fraction), and increases with the increase of In2O3 contents when the temperature is steady.展开更多
The degradation phenomena due to the energy pulse in the high-energy ZnO varistors used for deexitation and overvoltage protection of hydroelectric generator are investigated. The energy pulse, obtained by releasing t...The degradation phenomena due to the energy pulse in the high-energy ZnO varistors used for deexitation and overvoltage protection of hydroelectric generator are investigated. The energy pulse, obtained by releasing the energy stored in an inductor, can be equivalent to the combination of the DC field components and the energy component. The variations of the characterized voltages, nonlinear coefficients and pre-breakdown V-A characteristics, increase with the number of the applied energy pulse. The asymmetrical variations of the electric properties of the high-energy ZnO varistors after the energy pulse arise from the deformation of the double Schottky barriers due to the ion migration occuring in the depletion layer and in the grain boundary.展开更多
Highly stable ZnO varistor ceramics with steadily decreasing power loss have been put into applications in electrical and electronic systems for overvoltage protections, even with the absence of general understandings...Highly stable ZnO varistor ceramics with steadily decreasing power loss have been put into applications in electrical and electronic systems for overvoltage protections, even with the absence of general understandings on their aging behaviors. In this paper, we investigated their aging nature via conducting comparative direct current (DC) aging experiments both in air and in nitrogen, during which variations of electrical properties and interface properties were measured and analyzed. Notably, continuously increasing power loss with severe electrical degradation was observed for the sample aged in nitrogen. The power loss transition was discovered to be closely related to the consumption of oxygen adsorption at the grain boundary (GB), which could, however, remain constant for the sample aged in air. The interface density of states (DOS) Ni, which is crucial for pinning the potential barrier, was proved to decrease in nitrogen, but keep stable in air. Therefore, it is concluded that the oxygen adsorption at the GB is significant for the stability of interface states, which further correlates to the long-term stability of modern stable ZnO varistor ceramics.展开更多
The effects of TiO2 on sintering and nonlinear electrical properties of(98.5-x)ZnO–0.5MnO2–0.5Co2O3-0.5Bi2O3–xTiO2(x = 0.3,0.5,0.7,0.9 mol%) ceramic varistors prepared by the ceramic technique are investigated ...The effects of TiO2 on sintering and nonlinear electrical properties of(98.5-x)ZnO–0.5MnO2–0.5Co2O3-0.5Bi2O3–xTiO2(x = 0.3,0.5,0.7,0.9 mol%) ceramic varistors prepared by the ceramic technique are investigated in this work.The optimum sintering temperature of the prepared samples is deduced by determining the firing shrinkage and water absorption percentages.The optimum sintering temperature is found to be 1200℃,at which each of the samples shows a maximum firing shrinkage and minimum water absorption.Also minimum water absorption appears in a sample of x = 0.9 mol%.Higher sintering temperature and longer sintering time give rise to a reduction in bulk density due to the increased amount of porosity between the large grains of ZnO resulting from the rapid grain growth induced by the liquid phase sintering.The crystal size of ZnO decreases with increasing TiO2 doping.The addition of TiO2 improves the nonlinear coefficient and attains its maximum value at x = 0.7 mol% of TiO2,further addition negatively affects it.A decrease in capacitance consequently in the dielectric constant is recorded with increasing the frequency in a range of 30 kHz–200 kHz.The temperature and composition dependences of the dielectric constant and AC conductivity are also studied.The increase of temperature raises the dielectric constant because it increases ionic response to the field at any particular frequency.展开更多
Double-layered, low-voltage ZnO varistors have been fabricated by feeding two kinds of ZnO powders into a die using dry extrusion molding. Compared with ZnO varistors fabricated by the conventional route, the layered ...Double-layered, low-voltage ZnO varistors have been fabricated by feeding two kinds of ZnO powders into a die using dry extrusion molding. Compared with ZnO varistors fabricated by the conventional route, the layered ZnO varistors have larger non-linear coefficients, lower breakdown electric fields, and lower leakage current densities. The improvement in electrical performance of the layered low-voltage ZnO varistors is attributed to the asymmetric band structure at grain boundary between the two layers.展开更多
For quantitative estimation of the degree of electrical disorder(electrical inhomogeneity)in ZnO varistor ceramics caused by a variation in the barrier height at different grain boundaries in a sample,the comparison o...For quantitative estimation of the degree of electrical disorder(electrical inhomogeneity)in ZnO varistor ceramics caused by a variation in the barrier height at different grain boundaries in a sample,the comparison of threshold electric fields(onsets of highly nonlinear current-voltage characteristics)in ceramics and single grain boundary(GB)is suggested and approved.At dc degradation similar behavior of the current-voltage characteristics of ZnO varistor ceramics and single GB is observed.The percolation model of Shklovskii-De Gennes is applicable for the description of a disorder in ZnO varistor ceramics.The degree of the disorder in ZnO varistor ceramics is not dependent on the duration of dc degradation at least at degradation time below 60 h.At voltages close to the onset of a highly nonlinear region of current-voltage characteristic the correlation radius of infinite cluster is~5 times greater than the average grain size.展开更多
The nonlinear properties of ZBMCCS-based varistors,which are composed of ZnO-Bi_(2)O_(3)-MnO_(2)-Cr_(2)O_(3)-Sb_(2)O_(3)-Co_(3)O_(4) and SiO_(2) are studied inrelation to sintering temperature,in the range of 1280–1...The nonlinear properties of ZBMCCS-based varistors,which are composed of ZnO-Bi_(2)O_(3)-MnO_(2)-Cr_(2)O_(3)-Sb_(2)O_(3)-Co_(3)O_(4) and SiO_(2) are studied inrelation to sintering temperature,in the range of 1280–1350℃.The samples are investigated for grain morphology by using scanning electron microscope(SEM).These samples were examined by using X-ray diffraction patterns(XRD)and DC electrical measurements.X-ray diffraction analysis of the samples show the presence of ZnO,Zn_(2)SiO_(4) willemite phase and Co_(2.33)Sb_(0.67)O_(4) spinel phases.The average grain size of ZnO increased as the sintering temperature increased from 2.57 to 6.84m.In the examined temperature range,the breakdown field decreased from 2992 to 127 V/cm with the increase of sintering temperature.This system gives a relatively high nonlinearity coefficientα=33.61(at a sintering temperature of 1280℃)with a low leakage current of 0.21 mA/cm^(2).展开更多
This paper reviews the history of ZnO varistor,discribes its properties and recenttechnological status and forecasts its evolution.The future development trend is to produce the low-voltage high-energy multi-layer ZnO...This paper reviews the history of ZnO varistor,discribes its properties and recenttechnological status and forecasts its evolution.The future development trend is to produce the low-voltage high-energy multi-layer ZnO varistors.After the two additives are classified by their functions,the effect mechanism of Bi_2O_3 and TiO_2 additives are researched theoretically.TiO_2 will make ZnO graingrow bigger and V_ImA/mm be depressed down.Especially the colloid TiO_2 additive in the scale ofnanometer brings about a new method to realize the low voltage of ZnO varistor,which resolves theproblem of how to disturb nanometer powder evenly.Moreover the sintering temperature has prominenteffect on the electrical properties of ZnO varistors.Generally,the appropriate sintering temperature forlow-voltage ZnO varistor ceramics should not be more than 1 250℃.These provide an effective methodand rationale for studying low-voltage ZnO varistors.展开更多
The surge arrester of 1000 kV gas-insulated substation (GIS) needs ZnO varistor with high voltage gradient to effectively improve the potential distribution along ZnO varistor column inside the metal-oxide surge arres...The surge arrester of 1000 kV gas-insulated substation (GIS) needs ZnO varistor with high voltage gradient to effectively improve the potential distribution along ZnO varistor column inside the metal-oxide surge arresters. In this paper, the elec-trical and structural parameters of ZnO varistors are changed by doping with some rare-earth oxides, and the mechanism which leads these changes is discussed. When rare-earth oxide additives are added into ZnO varistors, the growing speed is slowed down due to the stabilization of the new spinel phases formed in the grain-boundary by rare-earth oxide additives, then the size of ZnO grains is smaller, and the voltage gradient of varistor increases obviously. By adding suitable amount of oxides of metal Co and Mn, the leakage current can be effectively decreased and the nonlinearity coefficient increased. The novel ZnO varistor samples sintered with the optimal additives have a voltage gradient of 492 V/mm, and the nonlinearity coefficient of 76, but their leakage currents are only 1 μA.展开更多
The nonuniformity of temperature distribution within ZnO varistor ceramics would decrease its energy absorption capability. In this paper, the distributions of current, temperature and thermal stress within the micros...The nonuniformity of temperature distribution within ZnO varistor ceramics would decrease its energy absorption capability. In this paper, the distributions of current, temperature and thermal stress within the microstructures of ZnO varistor ceramics are simulated using Voronoi diagram models. The results show that the current concentrates through a few paths in ZnO varistor due to the nonuniformity of ZnO grain size and the variety of electrical characteristics of grain boundaries, which induces local high temperature and great thermal stress when injecting impulse current into ZnO varistor, and leads to melting puncture or cracking failure. The influence of the ZnO grain size on the distributions of temperature and thermal stress within ZnO varistor ceramics is analyzed in detail. The energy absorption capability of ZnO varistor ceramics can be greatly improved by increasing the uniformity of ZnO grain size or decreasing the average size of ZnO grains.展开更多
In this paper discussions on ZnO based varistor ceramics doped with different ratios of Y2O3 are presented.Analysis on the phase and microstructures of the samples indicates that an additional phase is detected in the...In this paper discussions on ZnO based varistor ceramics doped with different ratios of Y2O3 are presented.Analysis on the phase and microstructures of the samples indicates that an additional phase is detected in the samples doped with Y2O3,and the average grain size of the specimens decreases from about 9.2μm to 4.5μm,with an increase in the addition of Y2O3 from 0 mol%to 3 mol%.The corresponding varistor’s voltage gradient markedly increases from 462 V/mm to 2340 V/mm,while the nonlinear coefficient decreases from 22.3 to 11.5,respectively.Furthermore,the characteristics of deep trap levels in these ZnO samples are investigated by measuring their dielectric spectroscopies.The trap energy level and capture cross section evaluated by relaxation peak of the Cole-Cole plot vary slightly as the addition of Y2O3 increases.These traps may be ascribed to the intrinsic defects of ZnO lattice.展开更多
文摘The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor increases with the content of Nd_2O_3 in the range of 0~0.04 (%,mol fraction). However when the content of Nd_2O_3 is more than 0.04 (%,mol fraction),the varistor voltage of ZnO varistor decreases with the content increase. The microstructure analysis indicates that a small amount of new compound with Nd exists at ZnO grain boundary and hinders the movement of grain boundary,which decreases the size of ZnO grain and makes the grain size and distribution homogeneous,as a result,additive (Nd_2O_3) raises the varistor voltage of the varistor greatly.
文摘The zinc oxide varistor with a low threshold voltage and large grain size was derived with ZnO crystalline seeds from a molten salt process The chemical composition and I-V characteristics of single grains and single grain boundaries were determined by means of energy dispersive spectrum (EDS) and microcontact measurement respectively. Temperatu re dependence of dielectric loss at various frequencies and voltage dependence of capacitance were carefully measured. Based on these experimental data. the barrier heights of giain boundaries are estimated to be 0.2. 0.5 and 0.6 eV respectively corresponding to thick, th in and direct contact grain boundaries. In addition. a computerized electrical circuit simufation is employed in simulating I-V characteristics of single grain boundary within ZnO varistor. By adjustjng parameters of resistor and diode, a general agreement between the measured data and simulated curves is achieved
文摘ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that this kind of ZnO powder has a high sintering activity. It is suitable for making the low voltage varistors. The Vc decreases with the increase of sintered temperature, when the In2O3 content is fixed(0. 98 %, mass fraction), and increases with the increase of In2O3 contents when the temperature is steady.
文摘The degradation phenomena due to the energy pulse in the high-energy ZnO varistors used for deexitation and overvoltage protection of hydroelectric generator are investigated. The energy pulse, obtained by releasing the energy stored in an inductor, can be equivalent to the combination of the DC field components and the energy component. The variations of the characterized voltages, nonlinear coefficients and pre-breakdown V-A characteristics, increase with the number of the applied energy pulse. The asymmetrical variations of the electric properties of the high-energy ZnO varistors after the energy pulse arise from the deformation of the double Schottky barriers due to the ion migration occuring in the depletion layer and in the grain boundary.
基金supported by the National Natural Science Foundation of China(Nos.51937008,52107027,and 52207022)the China Postdoctoral Science Foundation(No.2022M722513)State Key Laboratory of Electrical Insulation and Power Equipment(Nos.EIPE22113 and EIPE22310).
文摘Highly stable ZnO varistor ceramics with steadily decreasing power loss have been put into applications in electrical and electronic systems for overvoltage protections, even with the absence of general understandings on their aging behaviors. In this paper, we investigated their aging nature via conducting comparative direct current (DC) aging experiments both in air and in nitrogen, during which variations of electrical properties and interface properties were measured and analyzed. Notably, continuously increasing power loss with severe electrical degradation was observed for the sample aged in nitrogen. The power loss transition was discovered to be closely related to the consumption of oxygen adsorption at the grain boundary (GB), which could, however, remain constant for the sample aged in air. The interface density of states (DOS) Ni, which is crucial for pinning the potential barrier, was proved to decrease in nitrogen, but keep stable in air. Therefore, it is concluded that the oxygen adsorption at the GB is significant for the stability of interface states, which further correlates to the long-term stability of modern stable ZnO varistor ceramics.
文摘The effects of TiO2 on sintering and nonlinear electrical properties of(98.5-x)ZnO–0.5MnO2–0.5Co2O3-0.5Bi2O3–xTiO2(x = 0.3,0.5,0.7,0.9 mol%) ceramic varistors prepared by the ceramic technique are investigated in this work.The optimum sintering temperature of the prepared samples is deduced by determining the firing shrinkage and water absorption percentages.The optimum sintering temperature is found to be 1200℃,at which each of the samples shows a maximum firing shrinkage and minimum water absorption.Also minimum water absorption appears in a sample of x = 0.9 mol%.Higher sintering temperature and longer sintering time give rise to a reduction in bulk density due to the increased amount of porosity between the large grains of ZnO resulting from the rapid grain growth induced by the liquid phase sintering.The crystal size of ZnO decreases with increasing TiO2 doping.The addition of TiO2 improves the nonlinear coefficient and attains its maximum value at x = 0.7 mol% of TiO2,further addition negatively affects it.A decrease in capacitance consequently in the dielectric constant is recorded with increasing the frequency in a range of 30 kHz–200 kHz.The temperature and composition dependences of the dielectric constant and AC conductivity are also studied.The increase of temperature raises the dielectric constant because it increases ionic response to the field at any particular frequency.
基金supported by the Science and Technology Commission of Yunnan Province (No. 2002GG09)the Science Research Foundationof Kunming University of Science and Technology (No. 2007-15).
文摘Double-layered, low-voltage ZnO varistors have been fabricated by feeding two kinds of ZnO powders into a die using dry extrusion molding. Compared with ZnO varistors fabricated by the conventional route, the layered ZnO varistors have larger non-linear coefficients, lower breakdown electric fields, and lower leakage current densities. The improvement in electrical performance of the layered low-voltage ZnO varistors is attributed to the asymmetric band structure at grain boundary between the two layers.
文摘For quantitative estimation of the degree of electrical disorder(electrical inhomogeneity)in ZnO varistor ceramics caused by a variation in the barrier height at different grain boundaries in a sample,the comparison of threshold electric fields(onsets of highly nonlinear current-voltage characteristics)in ceramics and single grain boundary(GB)is suggested and approved.At dc degradation similar behavior of the current-voltage characteristics of ZnO varistor ceramics and single GB is observed.The percolation model of Shklovskii-De Gennes is applicable for the description of a disorder in ZnO varistor ceramics.The degree of the disorder in ZnO varistor ceramics is not dependent on the duration of dc degradation at least at degradation time below 60 h.At voltages close to the onset of a highly nonlinear region of current-voltage characteristic the correlation radius of infinite cluster is~5 times greater than the average grain size.
文摘The nonlinear properties of ZBMCCS-based varistors,which are composed of ZnO-Bi_(2)O_(3)-MnO_(2)-Cr_(2)O_(3)-Sb_(2)O_(3)-Co_(3)O_(4) and SiO_(2) are studied inrelation to sintering temperature,in the range of 1280–1350℃.The samples are investigated for grain morphology by using scanning electron microscope(SEM).These samples were examined by using X-ray diffraction patterns(XRD)and DC electrical measurements.X-ray diffraction analysis of the samples show the presence of ZnO,Zn_(2)SiO_(4) willemite phase and Co_(2.33)Sb_(0.67)O_(4) spinel phases.The average grain size of ZnO increased as the sintering temperature increased from 2.57 to 6.84m.In the examined temperature range,the breakdown field decreased from 2992 to 127 V/cm with the increase of sintering temperature.This system gives a relatively high nonlinearity coefficientα=33.61(at a sintering temperature of 1280℃)with a low leakage current of 0.21 mA/cm^(2).
文摘This paper reviews the history of ZnO varistor,discribes its properties and recenttechnological status and forecasts its evolution.The future development trend is to produce the low-voltage high-energy multi-layer ZnO varistors.After the two additives are classified by their functions,the effect mechanism of Bi_2O_3 and TiO_2 additives are researched theoretically.TiO_2 will make ZnO graingrow bigger and V_ImA/mm be depressed down.Especially the colloid TiO_2 additive in the scale ofnanometer brings about a new method to realize the low voltage of ZnO varistor,which resolves theproblem of how to disturb nanometer powder evenly.Moreover the sintering temperature has prominenteffect on the electrical properties of ZnO varistors.Generally,the appropriate sintering temperature forlow-voltage ZnO varistor ceramics should not be more than 1 250℃.These provide an effective methodand rationale for studying low-voltage ZnO varistors.
基金Supported by the National Nature Science Foundation of China (Grant Nos. 50425721 and 50737001)the 11th Five-Year National S&T Supporting Plan (Grant No. 2006BAA02A16)
文摘The surge arrester of 1000 kV gas-insulated substation (GIS) needs ZnO varistor with high voltage gradient to effectively improve the potential distribution along ZnO varistor column inside the metal-oxide surge arresters. In this paper, the elec-trical and structural parameters of ZnO varistors are changed by doping with some rare-earth oxides, and the mechanism which leads these changes is discussed. When rare-earth oxide additives are added into ZnO varistors, the growing speed is slowed down due to the stabilization of the new spinel phases formed in the grain-boundary by rare-earth oxide additives, then the size of ZnO grains is smaller, and the voltage gradient of varistor increases obviously. By adding suitable amount of oxides of metal Co and Mn, the leakage current can be effectively decreased and the nonlinearity coefficient increased. The novel ZnO varistor samples sintered with the optimal additives have a voltage gradient of 492 V/mm, and the nonlinearity coefficient of 76, but their leakage currents are only 1 μA.
基金This work was supported by the National Natural Science Foundation of China (Grant No. 59907001).
文摘The nonuniformity of temperature distribution within ZnO varistor ceramics would decrease its energy absorption capability. In this paper, the distributions of current, temperature and thermal stress within the microstructures of ZnO varistor ceramics are simulated using Voronoi diagram models. The results show that the current concentrates through a few paths in ZnO varistor due to the nonuniformity of ZnO grain size and the variety of electrical characteristics of grain boundaries, which induces local high temperature and great thermal stress when injecting impulse current into ZnO varistor, and leads to melting puncture or cracking failure. The influence of the ZnO grain size on the distributions of temperature and thermal stress within ZnO varistor ceramics is analyzed in detail. The energy absorption capability of ZnO varistor ceramics can be greatly improved by increasing the uniformity of ZnO grain size or decreasing the average size of ZnO grains.
基金Supported by the National Natural Science Foundation of China(Grant Nos.50425721 and 50737001)the 11th Five-year Natural S&T Supporting Plan of China(Grant No.2006 BAAO2A16)
文摘In this paper discussions on ZnO based varistor ceramics doped with different ratios of Y2O3 are presented.Analysis on the phase and microstructures of the samples indicates that an additional phase is detected in the samples doped with Y2O3,and the average grain size of the specimens decreases from about 9.2μm to 4.5μm,with an increase in the addition of Y2O3 from 0 mol%to 3 mol%.The corresponding varistor’s voltage gradient markedly increases from 462 V/mm to 2340 V/mm,while the nonlinear coefficient decreases from 22.3 to 11.5,respectively.Furthermore,the characteristics of deep trap levels in these ZnO samples are investigated by measuring their dielectric spectroscopies.The trap energy level and capture cross section evaluated by relaxation peak of the Cole-Cole plot vary slightly as the addition of Y2O3 increases.These traps may be ascribed to the intrinsic defects of ZnO lattice.