期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Ultraviolet and Deep-Ultraviolet Emissions from c-MgxZn1-xO/MgO Ultrathin Multilayer Heterostructures
1
作者 余萍 邱东江 吴惠桢 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第10期2688-2691,共4页
Cubic phase MgxZn1-x O/MgO multilayer heterostructures (c-Mgx Zn1-xO/MgO MHs) are grown on Si(100) and quartz substrates by reactive electron beam evaporation at low temperature (250℃). Cross-sectional morpholo... Cubic phase MgxZn1-x O/MgO multilayer heterostructures (c-Mgx Zn1-xO/MgO MHs) are grown on Si(100) and quartz substrates by reactive electron beam evaporation at low temperature (250℃). Cross-sectional morphology observations by field-emission scanning electron microscopy show the legible interfaces of c-MgxZn1-x O/MgO MHs. X-ray diffraction demonstrates that c-MgxZn1-xO/MgO MHs are of highly (100)-oriented. Optical trans- mission investigations of c-Mgx Zn1-x O/MgO MHs on quartz substrates reveal the coexistence of the two phases, c-MgxZn1-xO and MgO. Photoluminescence examination indicates the emergence of deep-ultraviolet emission centred at about 290nm along with the blue shift of the ultraviolet emission from 405nm to 39Gnm when the nominal thickness of c-MgxZn1-xO well layers of MHs is diminished to 3nm, which is probably originated from quantum confinement effect. 展开更多
关键词 zno/ZNMGO MULTIQUANTUM WELLS THIN-filmS ROOM-TEMPERATURE QUANTUM-WELLS BAND-GAP MGXZN1-XO growth SUBSTRATE si(111) ALLOY
下载PDF
ZnO/AlN/Si(111)薄膜的外延生长和性能研究 被引量:8
2
作者 郑畅达 王立 +3 位作者 方文卿 蒲勇 戴江南 江风益 《光学学报》 EI CAS CSCD 北大核心 2006年第3期463-466,共4页
用常压金属化学气相沉积法(MOCVD)在Si(111)衬底上制备了马赛克结构ZnO单晶薄膜。引入低温Al N缓冲层以阻止衬底氧化、缓解热失配和晶格失配。薄膜双晶X射线衍射2θ/ω联动扫描只出现了Si(111)、ZnO(000l)及Al N(000l)的衍射峰。ZnO/Al ... 用常压金属化学气相沉积法(MOCVD)在Si(111)衬底上制备了马赛克结构ZnO单晶薄膜。引入低温Al N缓冲层以阻止衬底氧化、缓解热失配和晶格失配。薄膜双晶X射线衍射2θ/ω联动扫描只出现了Si(111)、ZnO(000l)及Al N(000l)的衍射峰。ZnO/Al N/Si(111)薄膜C方向晶格常量为0.5195nm,表明在面方向处于张应力状态;其对称(0002)面和斜对称(1012)面的双晶X射线衍ω摇摆曲线半峰全宽分别为460″和1105″;干涉显微镜观察其表面有微裂纹,裂纹密度为20cm-1;3μm×3μm范围的原子力显微镜均方根粗糙度为1.5nm;激光实时监测曲线表明薄膜为准二维生长,生长速率4.3μm/h。低温10K光致发光光谱观察到了薄膜的自由激子、束缚激子发射及它们的声子伴线。所有结果表明,采用金属化学气相沉积法并引入Al N为缓冲层能有效提高Si(111)衬底上ZnO薄膜的质量。 展开更多
关键词 薄膜光学 zno/aln/si薄膜生长 常压金属化学气相沉积法 在线监测 结构性能 光致发光
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部