Photocatalysis activated by visible light remains highly challenging.Here,we report novel MoSe2/ZnO/ZnSe(ZM)hybrids fabricated via a simple hydrothermal method for photocatalytic reduction of Cr(VI)under visible light...Photocatalysis activated by visible light remains highly challenging.Here,we report novel MoSe2/ZnO/ZnSe(ZM)hybrids fabricated via a simple hydrothermal method for photocatalytic reduction of Cr(VI)under visible light irradiation.ZM hybrids show improved photocatalytic reduction ability under visible light irradiation compared to pure ZnO owing to good visible light absorption and rapid electron transfer and separation.The ZM hybrid shows the highest Cr(VI)reduction rate of 100%.Moreover,the photocatalytic Cr(VI)reduction process is mainly controlled by photoinduced electrons.展开更多
近年来,HIT(heterojunction with intrinsic thin-layer)结构太阳能电池由于具有转化效率高和可低温生产等优点获得了广泛的关注,但是转化原材料成本高、生产技术条件苛刻和缺陷态控制等问题制约了其进一步的发展。本文采用AFORS-HET软...近年来,HIT(heterojunction with intrinsic thin-layer)结构太阳能电池由于具有转化效率高和可低温生产等优点获得了广泛的关注,但是转化原材料成本高、生产技术条件苛刻和缺陷态控制等问题制约了其进一步的发展。本文采用AFORS-HET软件模拟了ZnO(n)/ZnSe(i)/c-Si(p)异质结太阳电池结构吸收层掺杂浓度、缺陷密度和界面缺陷态密度等参数对该结构短路电流、开路电压、填充因子和光电转换效率的影响。优化后的结果显示,当吸收层掺杂浓度为1×10^21 cm^-3,ZnO层和c-Si层缺陷密度小于1017 cm^-3时,ZnSe/c-Si界面缺陷密度小于1025 cm^-3时,该结构太阳能电池光电转换效率可达24.29%。展开更多
Nanowire-based photovoltaic devices have the advantages over planar devices in light absorption and charge transport and collection.Recently,a new strategy relying on type-Ⅱ band alignment has been proposed to facili...Nanowire-based photovoltaic devices have the advantages over planar devices in light absorption and charge transport and collection.Recently,a new strategy relying on type-Ⅱ band alignment has been proposed to facilitate efficient charge separation in core/shell nanowire solar cells.This paper reviews the type-Ⅱ heterojunction solar cells based on core/shell nanowire arrays,and specifically focuses on the progress of theoretical design and fabrication of type-Ⅱ Zn O/Zn Se core/shell nanowire-based solar cells.A strong photoresponse associated with the type-Ⅱ interfacial transition exhibits a threshold of 1.6 e V,which demonstrates the feasibility and great potential for exploring all-inorganic versions of type-Ⅱ heterojunction solar cells using wide bandgap semiconductors.Future prospects in this area are also outlooked.展开更多
基金Financial support from the Natural Science Foundation of Zhejiang Province(LY18E060005,LY19E020006)~~
文摘Photocatalysis activated by visible light remains highly challenging.Here,we report novel MoSe2/ZnO/ZnSe(ZM)hybrids fabricated via a simple hydrothermal method for photocatalytic reduction of Cr(VI)under visible light irradiation.ZM hybrids show improved photocatalytic reduction ability under visible light irradiation compared to pure ZnO owing to good visible light absorption and rapid electron transfer and separation.The ZM hybrid shows the highest Cr(VI)reduction rate of 100%.Moreover,the photocatalytic Cr(VI)reduction process is mainly controlled by photoinduced electrons.
基金supported by "973" Program (No.2012CB619301 and 2011CB925600)the National Natural Science Foundations of China (No.61227009,61106008,61106118,90921002,and 60827004)+1 种基金the Natural Science Foundations of Fujian Provincethe fundamental research funds for the central universities (No.2011121042 and 2011121026)
文摘Nanowire-based photovoltaic devices have the advantages over planar devices in light absorption and charge transport and collection.Recently,a new strategy relying on type-Ⅱ band alignment has been proposed to facilitate efficient charge separation in core/shell nanowire solar cells.This paper reviews the type-Ⅱ heterojunction solar cells based on core/shell nanowire arrays,and specifically focuses on the progress of theoretical design and fabrication of type-Ⅱ Zn O/Zn Se core/shell nanowire-based solar cells.A strong photoresponse associated with the type-Ⅱ interfacial transition exhibits a threshold of 1.6 e V,which demonstrates the feasibility and great potential for exploring all-inorganic versions of type-Ⅱ heterojunction solar cells using wide bandgap semiconductors.Future prospects in this area are also outlooked.
