In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured s...In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured structure with both crater-like and pyramid-like), were prepared by three kinds of methods, and the application of these ZnO thin-films as a front electrode in solar cell was studied, respectively. In the first method with negative bias voltage and appropriate sputtering parameters, the textured structure with columnar and polygon on the surface of ZnO thin-film are both existence for the sample prepared by direct magnetron sputtering. Using as a front electrode in solar cell, the photoelectric conversion efficiency Eff of 7.00% was obtained. The second method is that by sputtering on the ZnO:Al self-supporting substrate, and the distribution of pyramid-like was gained. Moreover, the higher (8.25%) photoelectric conversion efficiency of solar cell was got. The last method is that by acid-etching the as-deposited ZnO thin-film which possesses mainly both columnar and polygon structure, and the textured ZnO thin-film with both crater-like and pyramid-like structure was obtained, and the photoelectric conversion efficiency of solar cell is 7.10% when using it as front electrode. These results show that the textured ZnO thin-film prepared on self-supporting substrate is more suitable for using as a front electrode in amorphous silicon cells.展开更多
Ga doped ZnO （OZO）/Cu grid/GZO transparent conductive electrode （TCE） structures were fabricated at room temperature （RT） by using electron beam evaporation （EBE） for the Cu grids and RF magnetron sputtering f...Ga doped ZnO （OZO）/Cu grid/GZO transparent conductive electrode （TCE） structures were fabricated at room temperature （RT） by using electron beam evaporation （EBE） for the Cu grids and RF magnetron sputtering for the GZO layers. In this work, we investigated the electrical and optical characteristics of GZO/Cu grid/GZO multilayer electrode for thin film solar cells by using evaporated Cu grid and sputtered GZO thin films to enhance the optical transparency without significantly affecting their conductivity. The optical transmittance and sheet resistance of GZO/Cu grid/GZO multilayer are higher than those of GZO/Cu film/GZO multilayer independent of Cu grid separation distance and increase with increasing Cu grid separation distances. The calculation of both transmittance and sheet resistance of GZO/Cu grid] GZO multilayer was based on Cu filling factor correlated with the geometry of Cu grid. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid/GZO multilayer were similar to the experimentally observed ones. The highest figure of merit ФTc is 5.18× 10^-3Ω^-1 for the GZO/Cu grid] GZO multilayer with Cu grid separation distance of 1 mm was obtained, in this case, the transmittance and resistivity were 82.72% and 2.17 × 10 ^-4Ωcm, respectively. The transmittance and resistivity are accentahle for nractical thin film snlar cell annlicatinn~展开更多
ZnO films were deposited on glass substrates by means of a metal organic decomposition (MOD) method. We investigated the effect of annealing temperature, time and the number of laminated layers on the film structure o...ZnO films were deposited on glass substrates by means of a metal organic decomposition (MOD) method. We investigated the effect of annealing temperature, time and the number of laminated layers on the film structure on the basis of X-ray diffraction measurements. We found the optimum conditions of the temperature and the time to be 600°C and 40 minutes for the preparation, respectively. In addition, the layer-by-layer forming was not found to degrade the film from viewpoint of X-ray line width.展开更多
Ga doped ZnO （GZO）/Cu grid double layer structures were prepared at room temperature （RT）. We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid sp...Ga doped ZnO （GZO）/Cu grid double layer structures were prepared at room temperature （RT）. We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit （ФTC = 6.19 × 10^-3 Ω^-1） was obtained. In this case, the transmittance, resistivity and filling factor （FF） of the GZO/Cu grid double layer are 83.74%, 1.10 ×10^-4Ω.cm and 0.173, respectively.展开更多
文摘In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured structure with both crater-like and pyramid-like), were prepared by three kinds of methods, and the application of these ZnO thin-films as a front electrode in solar cell was studied, respectively. In the first method with negative bias voltage and appropriate sputtering parameters, the textured structure with columnar and polygon on the surface of ZnO thin-film are both existence for the sample prepared by direct magnetron sputtering. Using as a front electrode in solar cell, the photoelectric conversion efficiency Eff of 7.00% was obtained. The second method is that by sputtering on the ZnO:Al self-supporting substrate, and the distribution of pyramid-like was gained. Moreover, the higher (8.25%) photoelectric conversion efficiency of solar cell was got. The last method is that by acid-etching the as-deposited ZnO thin-film which possesses mainly both columnar and polygon structure, and the textured ZnO thin-film with both crater-like and pyramid-like structure was obtained, and the photoelectric conversion efficiency of solar cell is 7.10% when using it as front electrode. These results show that the textured ZnO thin-film prepared on self-supporting substrate is more suitable for using as a front electrode in amorphous silicon cells.
基金support of the key project of the National Natural Science Foundation of China under Grant Nos.91333203 and 51172204the Program for Innovative Research Team in University of Ministry of Education of China under Grant No.IRT13037the Zhejiang Provincial Department of Science and Technology of China under Grant No.2010R50020
文摘Ga doped ZnO （OZO）/Cu grid/GZO transparent conductive electrode （TCE） structures were fabricated at room temperature （RT） by using electron beam evaporation （EBE） for the Cu grids and RF magnetron sputtering for the GZO layers. In this work, we investigated the electrical and optical characteristics of GZO/Cu grid/GZO multilayer electrode for thin film solar cells by using evaporated Cu grid and sputtered GZO thin films to enhance the optical transparency without significantly affecting their conductivity. The optical transmittance and sheet resistance of GZO/Cu grid/GZO multilayer are higher than those of GZO/Cu film/GZO multilayer independent of Cu grid separation distance and increase with increasing Cu grid separation distances. The calculation of both transmittance and sheet resistance of GZO/Cu grid] GZO multilayer was based on Cu filling factor correlated with the geometry of Cu grid. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid/GZO multilayer were similar to the experimentally observed ones. The highest figure of merit ФTc is 5.18× 10^-3Ω^-1 for the GZO/Cu grid] GZO multilayer with Cu grid separation distance of 1 mm was obtained, in this case, the transmittance and resistivity were 82.72% and 2.17 × 10 ^-4Ωcm, respectively. The transmittance and resistivity are accentahle for nractical thin film snlar cell annlicatinn~
文摘ZnO films were deposited on glass substrates by means of a metal organic decomposition (MOD) method. We investigated the effect of annealing temperature, time and the number of laminated layers on the film structure on the basis of X-ray diffraction measurements. We found the optimum conditions of the temperature and the time to be 600°C and 40 minutes for the preparation, respectively. In addition, the layer-by-layer forming was not found to degrade the film from viewpoint of X-ray line width.
基金supported by the Key Project of the National Natural Science Foundation of China(No.91333203)the Program for Innovative Research Team in University of Ministry of Education of China(No.IRT13037)+1 种基金the National Natural Science Foundation of China(No.51172204)the Zhejiang Provincial Department of Science and Technology of China(No.2010R50020)
文摘Ga doped ZnO （GZO）/Cu grid double layer structures were prepared at room temperature （RT）. We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit （ФTC = 6.19 × 10^-3 Ω^-1） was obtained. In this case, the transmittance, resistivity and filling factor （FF） of the GZO/Cu grid double layer are 83.74%, 1.10 ×10^-4Ω.cm and 0.173, respectively.
