Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-s...Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simu- late chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.展开更多
Low-frequency and High-frequency Capacitance-Voltage（C-V） curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generation-recombination -tr...Low-frequency and High-frequency Capacitance-Voltage（C-V） curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generation-recombination -trapping impurities,are presented to illustrate the enhancement of the giant trapping capacitances by physical means via device and circuit designs,in contrast to chemical means via impurity characteristics previously reported.Enhancement is realized by masking the electron or/and hole storage capacitances to make the trapping capacitances dominant at the terminals.Device and materials properties used in the computed CV curves are selected to illustrate experimental realizations for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.展开更多
基金supported by Xiamen University,Chinathe CTSAH Associates(CTSA)founded by the late Linda Su-Nan Chang Sah
文摘Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simu- late chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.
基金supported by the Xiamen University,China,and the CTSAH Associates(CTSA),founded by the late Linda Su-Nan Chang Sah
文摘Low-frequency and High-frequency Capacitance-Voltage（C-V） curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generation-recombination -trapping impurities,are presented to illustrate the enhancement of the giant trapping capacitances by physical means via device and circuit designs,in contrast to chemical means via impurity characteristics previously reported.Enhancement is realized by masking the electron or/and hole storage capacitances to make the trapping capacitances dominant at the terminals.Device and materials properties used in the computed CV curves are selected to illustrate experimental realizations for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.
基金the National Natural Science Foundation of China(NSFC)(51773157 and 52061135206)the Fundamental Research Funds for the Central UniversitiesThe authors also thank the support of the opening project of Key Laboratory of Materials Processing and Mold and Beijing National Laboratory for Molecular Sciences(BNLMS201905).
