A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the n...A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage （BV）, a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area （SCSOA） and reduces the energy loss during the turn-off process.展开更多
A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the trench accumulation layer controlled IGBT（TAC-IGBT）.The new structure maintains a low on-state volt...A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the trench accumulation layer controlled IGBT（TAC-IGBT）.The new structure maintains a low on-state voltage drop and large forward biased safe operating area（FBSOA） of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage.In addition,it enlarges the short circuit safe operating area（SCSOA） of the TAC-IGBT,and is simple in fabrication and design.Simulation results indicate that,for IGBT structures with a breakdown voltage of 1200 V,the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.展开更多
基金Project supported by the Guangdong Science&Technology Project(No.2010B090400443)the Shenzhen Science&Technology Foundation(Nos.JC201005270276A,ZD201006110039A)the Longgang Science&Technology Developing Foundation
文摘A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage （BV）, a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area （SCSOA） and reduces the energy loss during the turn-off process.
文摘A new trench gate IGBT structure with a floating P region is proposed,which introduces a floating P region into the trench accumulation layer controlled IGBT（TAC-IGBT）.The new structure maintains a low on-state voltage drop and large forward biased safe operating area（FBSOA） of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage.In addition,it enlarges the short circuit safe operating area（SCSOA） of the TAC-IGBT,and is simple in fabrication and design.Simulation results indicate that,for IGBT structures with a breakdown voltage of 1200 V,the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.
