Effects of Ratio of Row Spacing to Intrarow Spacing on Yield and Nitrogen Accumulation and Utilization of Early and Late Rice

[Objective]The aim was to provide a theoretical basis for the rational configuration of ratio of row spacing to intrarow spacing(RS/IS)of double-cropping rice.[Methods]With early rice‘Ganxin 203’and‘Zhongjiazao 17’and late rice‘Ganxin 688’and‘Wufengyou T025’as materials,the effects of RS/IS on yield,nitrogen accumulation and utilization were studied in the same planting density of31.20×104hills/hm2.[Results]The results showed that yield of early rice was higher in RS/IS2.8(30.0 cm×10.7 cm)and RS/IS2.0(25.0 cm×12.8 cm)treatment,and lower in RS/IS5.0(40.0 cm×8.0 cm)and RS/IS1.3(20.0 cm×16.0 cm)treatment,while late rice were higher in RS/IS5.0and RS/IS2.0treatment,and lower in RS/IS2.8and RS/IS1.3treatment.Total nitrogen accumulation and apparent utilization ratio of nitrogen of early rice were higher in RS/IS2.0treatment and lower in RS/IS5.0treatment,while,for late rice were higher in RS/IS2.8treatment and lower in RS/IS5.0treatment.Nitrogen requirement for 100 kg grain production of early rice was higher in RS/IS1.3treatment and lower in RS/IS2.0treatment,while,for late rice were higher in RS/IS2.8treatment,lower in RS/IS5.0treatment.[Conclusion]In sum,4 varieties of early and late rice obtained higher yield in 25.0 cm×12.8 cm and lower yield in 20.0 cm×16.0 cm,and total nitrogen accumulation,nitrogen requirement for 100 kg grain production and apparent utilization ratio of nitrogen were all lower in 40.0 cm×8.0 cm.

Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch

Experiments with the limited space-charge accumulation（LSA） mode of oscillation in a large gap semiinsulating （SI） GaAs photoconductive semiconductor switch（PCSS） are discussed.It has been observed that growth and drift of a photo-activated charge domain（PACD） are quenched only when the bias voltage is more than twice the threshold voltage.The original negative resistance characteristics are directly utilized in the LSA mode;during LSA operation the spatial average of the electric field varies over a large portion of the negative differential mobility region of the velocity-electric field characteristic.The work efficiency of an SI GaAs PCSS is remarkably enhanced by electric field excursions into the positive resistance region when the total electric field is only below the threshold part of the time.The LSA mode can only operate in the certain conditions that satisfy the quenching of the accumulation layer and the smaller initial domain voltage.

Post-Reform New Town Development in China

In this paper, we present an overview of urban practice in China since the late 1970s and come up with a refreshed concept regarding "new towns" as existing in a widely different politico-economic context. With the urbanization of capital being the theoretical backbone of this paper, we attempt to reveal basic laws inherent in the emergence and proliferation of various forms of urban spaces within a rapidly modernizing country. Considered from various viewpoints such as land institutions, national policy designs, and the fi nancial capital and bank system, our paper covers: a historical overview of China's post-reform new towns, a theoretical framework to explain related phenomena, empirical approaches to interpreting the contributory factors, and a theoretical outline for further research.