Characteristics of Aerosol Activation Efficiency and Aerosol and CCN Vertical Distributions in North China

By analyzing airborne observations over North China from 30 flights during spring and autumn of 2005-2007, characteristics of the vertical distributions of aerosol and cloud condensation nuclei （CCN） at 0.3% supersaturation in various locations of North China are investigated. The measurement samplings were conducted over different surfaces such as plains, plateau, and sea. The results show that the number concentration of accumulation mode aerosols was greater in autumn than in spring, but the reverse is true for CCN. This means that more aerosols with diameters smaller than 100 nm could be activated as CCN in spring, and this could induce higher aerosol activation efficiency. The aerosol activation efficiency over the plains near the Taihang Mountain was greater in spring than in autumn, and it was greater over sea than over land. The aerosol activation efficiency above the boundary layer over the Bashang Plateau was very low. Based on a fit of the negative exponential vertical distributions of aerosol and CCN, a spatial parameterization model of aerosol and CCN as well as aerosol activation efficiency over North China was proposed. The results show that aerosol activation efficiency was not clearly dependent on altitude because it was mainly affected by regional physical and chemical characteristics of aerosols and the ambient atmospheric conditions. The mean aerosol activation efficiency is 0.66, with values of 0.70 and 0.53 in spring and autumn, respectively.

Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.

High Efficiency and Stable Organic Light-Emitting Diodes Based on Thermally Activated Delayed Fluorescence Emitter

High efficiency, stable organic light-emitting diodes （OLEDs） based on 2-pheyl-4＇-carbazole-9-H-Thioxanthen-9- one-10, 10-dioxide （TXO-PhCz） with different doping concentration are constructed. The stability of the encap- sulated devices are investigated in detail. The devices with the 10 wt% doped TXO-PhCz emitter layer （EML） show the best performance with a current efficiency of 52.1 cd/A, a power efficiency of 32.71re^W, and an external quantum efficiency （EQE） of 17.7%. The devices based on the lOwt%-doped TXO-PhCz EML show the best operational stability with a half-life time （LTSO） of 8Oh, which is 8 h longer than that of the reference devices based on fac-tris（2-phenylpyridinato）iridium（ Ⅲ） （Ir（ppy）a）. These indicate excellent stability of TXO-PhCz for redox and oxidation processes under electrical excitation and TXO-PhCz can be potentially used as the emitters for OLEDs with high efficiency and excellent stability. The high-performance device based on TXO-PhCz with high stability can be further improved by the optimization of the encapsulation technology and the development of a new host for TXO-PhCz.

Homoepitaxial growth of (100) Si-doped β-Ga_(2)O_(3) films via MOCVD

Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy.

Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors

Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.

Efficient Diode-End-Pumped Actively Q-Switched Nd:YLF/SrWO4 Raman Laser

An efficient diode-end-pumped actively Q-switched Nd：YLF/SrW04 Raman laser is demonstrated. The fun- damental wave is 1047.0nm and the corresponding first-Stocks wave is 1158.7nm. With a pumping power of 10.5 W, the average output power of 2.2 W at 1158.7nm is obtained, with the corresponding optical conversion efficiency of 20.9%. At a repetition rate of 6 kHz, the pulse width of the Raman laser is 8. 7ns and the peak power is calculated to be 42.1 kW. The beam quality factors M2 in horizontal and vertical directions are 1.3 and 1.5, respectively.

Efficient Diode-Pumped Actively Q-Switched Ceramic Nd:YAG/YVO4 Raman Laser Operating at 1657 nm

A diode-pumped actively Q-switched Raman laser is demonstrated, with YV04 employed as Raman active medium, based on a ceramic Nd：YAG laser operating at 1444nm. The first-stokes Raman generation at 1657nm is achieved. A maximum output power of as high as 612mW is obtained under a pump power of 20. 7 W and at a pulse repetition frequency rate of 20kHz, corresponding to an optical-to-optical conversion efficiency of 3%.

Novel thioxanthone host material with thermally activated delayed fluorescence for reduced efficiency roll-off of phosphorescent OLEDs

2,7-Di（9,9-dimethyl-9H-fluoren-l-yl）-9H-thioxanthen-9-one （DMBFTX） with thermally activated delayed fluorescence （TADF） was well designed and synthesized. The phosphorescent organic lightemitting device （PHOLED） based on this novel TADF host material displays a stable red phosphorescence region, a peak external quantum efficiency （EQE） value of 12.9% and a low EQE roll-off of 38.8%at a luminance of 10000 cd/m2, which is benefited from the reverse intersystem crossing （RISC） of TADF host and less populated triplet exitons. Notably, the red device based on the TADF host DMBFrX exhibits superior electroluminescence performance and reduced efficiency roll-offcompared with the one hosted by commercially available host 1,3-bis（9-carbazolyl）benzene （mCP）, illustrating the high potential of employing the TADF host material with small energy gap to reduce efficiency roll-off in PHOLED.