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Frequency-selective Optimization of Periodic Gate Control Signals in DC/DC Converters for EMI-reduction
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作者 Caroline Krause Stephan Frei 《Chinese Journal of Electrical Engineering》 CSCD 2022年第4期11-18,共8页
High-frequency switching of power transistors in power electronic systems can cause electromagnetic emissions.Simple approaches for reducing high-frequency disturbances,such as inserting an additional gate resistor,le... High-frequency switching of power transistors in power electronic systems can cause electromagnetic emissions.Simple approaches for reducing high-frequency disturbances,such as inserting an additional gate resistor,lead to increased power losses.This makes achieving both electromagnetic compatibility and power efficiency difficult.Active gate drivers help to find a trade-off between these two.Typically,only narrow-band disturbances must be reduced.Accordingly,a target signal with a spectrum notched at some frequencies can be defined.The target signal can be reached by a target-signal-oriented control of the transistor’s gate.This leads to steeper switching slopes,such that the power losses are less increased.Generating arbitrary target signals is impossible.The transistor signal exhibits some physical limitations.A constraint satisfaction problem must be solved,and the gate drive signal must be optimized by applying a residual and Newton’s method.The proposed optimization process in the frequency domain is based on the circuit simulation method named“harmonic balance”.Measurements on a DC/DC converter exhibit the benefits of this method. 展开更多
关键词 Power electronics active gate driving electromagnetic compatibility Newton’s method
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A driving pulse edge modulation technique and its complex programming logic devices implementation 被引量:1
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作者 Xiao CHEN Dong-chang QU +1 位作者 Yong GUO Guo-zhu CHEN 《Frontiers of Information Technology & Electronic Engineering》 SCIE EI CSCD 2015年第12期1088-1098,共11页
With the continual increase in switching speed and rating of power semiconductors, the switching voltage spike becomes a serious problem. This paper describes a new technique of driving pulse edge modulation for insul... With the continual increase in switching speed and rating of power semiconductors, the switching voltage spike becomes a serious problem. This paper describes a new technique of driving pulse edge modulation for insulated gate bipolar transistors(IGBTs). By modulating the density and width of the pulse trains, without regulating the hardware circuit, the slope of the gate driving voltage is controlled to change the switching speed. This technique is used in the driving circuit based on complex programmable logic devices(CPLDs), and the switching voltage spike of IGBTs can be restrained through software, which is easier and more flexible to adjust. Experimental results demonstrate the effectiveness and practicability of the proposed method. 展开更多
关键词 Driving pulse edge modulation Switching voltage spike Complex programmable logic device(CPLD) active gate drive
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