High performance active image sensor pixel design with circular structure oxide TFT

We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide(aIGZO) thin-film transistors(TFTs) with a circular structure. The TFT, configured with the inner electrode as source and outer electrode as drain, typically exhibits good saturation electrical characteristics, where the device has a constant drive current despite variations in drain voltage. Due to the very high output resistance exhibited by this asymmetric TFT structure with a circular shape, the pixel circuit considered here in common-drain configuration provides a higher gain of operation than a pixel circuit implemented with rectangular a-IGZO TFTs. They can be used as driving TFTs in active image sensor circuits. They are, therefore,good candidates for digital X-ray detectors in applications such as medical diagnostic procedures.

Design,Analysis,and Optimization of a CMOS Active Pixel Sensor

A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.

New Active Digital Pixel Circuit for CMOS Image Sensor

A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It is optimized by simulation and adjustment based on 2 μm standard CMOS process. Each circuit of the components is designed with specific parameters. The simulation results of the whole pixel circuits show that the circuit has such advantages as low distortion, low power consumption, and improvement of the output performances by using an inverter.

Pixel and Column Fixed Pattern Noise Suppression Mechanism in CMOS Image Sensor

A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.

Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor

A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.

Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors

Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.

MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation

By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.

Novel Logarithmic Active Pixel Sensor with High Dynamic Range and High Output Swing

The logarithmic response complementary metal oxide semiconductor （CMOS） image sensor provides a wide dynamic range, but its drawback is the lack of simple fixed pattern noise（FPN） cancellation scheme. Designed is a novel logarithmic active pixel sensor（APS） with high dynamic range and high output swing. Firstly, the operation principle of mixed-model APS is introduced. The pixel can work in three operation modes by choosing the proper control signals. Then, FPN sources of logarithmic APS are analyzed, and double-sampled technique is implemented to reduce FPN. Finally, according to the simulation results, layout is designed and has passed design rule check（DRC）, electronic rule eheck（ERC） and layout versus schematic（LVS） verifications, and the post-simulation results are basically in agreement with the simulation results. Dynamic range of the new logarithmic APS can reach about 140 dB; and the output swing is about 750 inV. Results show that by using double sampled technique, most FPN is eliminated and the dynamic range is enhanced.

Simulation of monolithic active pixel sensor with high resistivity epitaxial layer

The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity epitaxial layers(epi-layers) are built and simulated using Synopsys-Sentaurus.The basic characteristics of detectors are evaluated,including electric potential,electric field,and depleted region.Results indicate that the high resistivity (HR) epi-layer is a better choice.Further,simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer.

A New CMOS Image Sensor with a High Fill Factor and the Dynamic Digital Double Sampling Technique

A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.

Time-dependent crosstalk effects for image sensors with different isolation structures

Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially no- ticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends on the structure and electrical properties of the photosensitive areas. In this work, time-dependent crosstalk effects considering different isola- tion structures are investigated. According to the different depths of photo-diode （PD） and isolation structure, the transport of photo-generated carriers is analyzed with different regions in the pixel cell. The evaluation of crosstalk is influenced by exposure time. Crosstalk can be suppressed by reducing the exposure time. However, the sensitivity and dynamic range of the image sensor need to be considered as well.

DESIGN AND IMPLEMENTATION OF CMOS IMAGE SENSOR

A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.

EBAPS的调制传递函数测试系统

电子轰击有源像素传感器(electron bombarded active pixel sensor,EBAPS)是一种新型的真空-固体混合型微光夜视器件,而调制传递函数(modulation transfer function,MTF)作为EBAPS的性能参数之一,能够反映成像系统对不同频率成分的传递能力,但目前国内缺少相应的测试手段。因此,为了表征并评价EBAPS的成像质量,基于像增强器狭缝法测试MTF的原理,设计并搭建了一套EBAPS的MTF测试系统。通过驱动EBAPS器件,利用USB接口将采集到的数据传输至上位机进行图像分析,对狭缝图像进行处理获得线扩散函数(line spread function,LSF),经离散傅里叶变换后得到相应的调制传递函数曲线。在狭缝靶标处照度为2×10^(-2) lx时,一定范围内随着电压升高,EBAPS的MTF先升高后降低,且在外加-1 000 V时取得最大值。在光成像模式下,微调狭缝与传感器成像面的相对位置,连续5次测试得到几个重要频率点的MTF值的标准差均低于0.01,稳定性较好。

APS星敏感器探测灵敏度研究

从噪声中信号的检测理论着手,推导了恒星信号在有源像元传感器(APS)像面的响应电子数的表示方法,介绍了APS的主要噪声及噪声模型计算,得出了ASP星敏感器的信噪比,并用信噪比阈值推导出APS星敏感器的探测灵敏度模型。通过对典型APS IBIS5的实例计算,得出在常规光学系统设计参数下,当信噪比阈值为8.1,探测概率为99.9%时,探测灵敏度可达到6.5星等。

基于CMOS APS的星敏感器光学系统参数确定

基于CMOSAPS图象传感器的星敏感器是适应航天技术的发展而产生的新一代姿态敏感器。确定光斑形状和大小、光学系统有效通光孔径、视场和焦距等参数是进行星敏感器光学设计的前提。本文基于选定的CMOSAPS图象传感器分别对这些参数进行了分析和计算。确定光斑形状和大小的依据是,减小由于探测器像元对光斑能量分布的采样导致点扩散函数变形,从而引起的利用亚像元技术求星像中心的计算误差。光学系统的有效通光孔径与星敏感器所能探测到的极限星等有关,通过从目标辐射特性直到探测器响应的能量计算可以确定孔径的大小。确定视场和焦距首先要满足星敏感器实现全天自主星图识别所需的导航星捕获概率,其次要考虑与之相关的误差。

CMOS APS器件及其在星敏感器中的应用

介绍了CMOS有源像元图像传感器 (APS)的原理与结构特点 ,阐述了CMOSAPS与CCD比较应用于星敏感器的潜在优势 ,详细介绍了CMOS图像传感器在星敏感器中的应用现状 ,并对基于CMOSAPS与基于CCD的星敏感器的测量精度结果进行对比 。

APS星跟踪器亚像素质心定位

APS像元结构和大小制约APS星跟踪器精度,采用散焦技术使星光成像在几个相邻像素(窗)上,以窗内灰度重心作为星点质心可以得到亚像素定位精度。APS具有多种噪声源,它们直接影响质心定位精度。根据星点模型和质心误差计算模型量化分析了窗大小、星点模型方差、噪声源对APS亚像素质心定位的影响。分析结果表明5×5窗为最优窗,星点模型方差最优值为0.62个像素,精度为0.0016个像素;固定模式噪声、暗电流对质心定位影响较大,读噪声较小,提高信噪比可以改善质心定位精度。

APS星跟踪器探测灵敏度研究

APS星跟踪器探测灵敏度同APS噪声源、填充因子、量化效应、频谱响应和恒星的光辐射特性有关,其中,APS噪声和APS对恒星辐射的响应特性是主要影响因素。提出了一种计算APS探测极限星等的简单方法。该方法根据最佳检测原则,由信噪比阈值和APS噪声值得到APS探测信号值,再通过典型APS对0星等恒星的辐射响应求出APS相应的探测极限星等。在信噪比阈值为5的情况下,得到某类APS的探测极限为6.31星等。

γ射线电离辐射对商用CMOS APS性能参数的影响

研究了γ射线电离辐射效应对商用CMOS有源像素传感器(APS)性能参数的影响,着重分析了量子效率、转换增益、暗电流、坏点和脉冲颗粒噪声等参数。研究结果表明:当受到1 000 Gy辐射后,APS失去工作能力,无信号输出或像素灰度值仅为0,110,255 DN。60Coγ射线的离位截面约为10-25cm2(0.1 b)。当剂量率低于58.3 Gy/h且辐照时间较短时,辐射对量子效率及转换增益无影响,坏点产生数为0,总剂量效应使3T-APS的本底噪声升高到4.62 DN但对4T PPD APS几乎无影响。脉冲颗粒噪声引起的各灰度值像素数量分布呈泊松分布,并与剂量率正相关。

CMOS APS图像传感器的像质分析

使用标准CMOS制作工艺生产的有源像素传感器(APS)引起了广泛关注。为了确定CMOSAPS成像系统设计的主要参数选择的正确性,以及能否满足要求或指标,需要对相机系统的像质进行分析。考虑到CMOSAPS图像传感器与CCD的不同,在分析时计算了CMOSAPS成像系统中的镜头、滤光片和焦平面的调制传递函数(MTF),系统MTF曲线为各个部分MTF值之积。在系统截止频率范围内,利用MTF曲线所围面积的大小来评价系统的成像质量。在系统制造之前,用调制传递函数作为像质的评价方法,看其是否符合使用要求,是十分有价值的工作。