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Effect of interstitial air holes on Bragg gratings in photonic crystal fibre with a Ge-doped core
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作者 张慧嘉 李曙光 侯蓝田 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第2期630-635,共6页
The effect of interstitial air holes on Bragg gratings in photonic crystal fibre (PCF) with a Ge-doped core is numerically investigated by using the beam propagation method (BPM). It is shown that the interstitial... The effect of interstitial air holes on Bragg gratings in photonic crystal fibre (PCF) with a Ge-doped core is numerically investigated by using the beam propagation method (BPM). It is shown that the interstitial air holes (IAHs) can make Bragg resonance wavelength λB shift a little towards short wavelengths and increase λB -λ1 (the wavelength spacing between the main peak with Bragg resonance wavelength λB and the first side peak with wavelength λ1) and the coupling coefficient κ of Bragg resonance. Moreover, when the ratio of air hole diameter (d) to pitch (∧), d/∧, is small, IAHs can suppress the cladding mode resonance. When d/∧ is large, IAHs increase the number of mode that could strongly interact with the fundamental mode. By comparing the transmission spectral characteristics of PCF-based fibre Bragg grating (FBG) with IAHs with those without IAHs at the same air-filling fraction, it is clarified that the change of transmission spectral characteristics of PCF-based FBG with IAHs is not due to a simple change in air-filling fraction. It is also closely related to the distribution of interstitial air holes. 展开更多
关键词 photonic crystal fibre fibre grating beam propagation method interstitial air holes
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Effect of dilution holes on the performance of a triple swirler combustor 被引量:14
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作者 Ding Guoyu He Xiaomin +3 位作者 Zhao Ziqiang An Bokun Song Yaoyu Zhu Yixiao 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2014年第6期1421-1429,共9页
A triple swirler combustor is considered to be a promising solution for future high temperature rise combustors. The present paper aims to study dilution holes including primary dilution holes and secondary dilution h... A triple swirler combustor is considered to be a promising solution for future high temperature rise combustors. The present paper aims to study dilution holes including primary dilution holes and secondary dilution holes on the performance of a triple swirler combustor. Experimental investigations are conducted at different inlet airflow velocities(40–70 m/s) and combustor overall fuel–air ratio with fixed inlet airflow temperature(473 K) and atmospheric pressure. The experimental results show that the ignition is very difficult with specific performance of high ignition fuel–air ratio when the primary dilution holes are located 0.6H(where H is the liner dome height)downstream the dome, while the other four cases have almost the same ignition performance. The position of primary dilution holes has an effect on lean blowout stability and has a large influence on combustion efficiency. The combustion efficiency is the highest when the primary dilution holes are placed 0.9H downstream the dome among the five different locations.For the secondary dilution holes, the pattern factor of Design A is better than that of Design B. 展开更多
关键词 Combustor performance Fuel–air ratio Primary dilution holes Secondary dilution holes Triple swirler combustor
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Enormous enhancement in electrical performance of few-layered MoTe2 due to Schottky barrier reduction induced by ultraviolet ozone treatment 被引量:4
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作者 Xiaoming Zheng Xueao Zhang +8 位作者 Yuehua Wei Jinxin Liu Hang Yang Xiangzhe Zhang Shitan Wang Haipeng Xie Chuyun Deng Yongli Gao Han Huang 《Nano Research》 SCIE EI CAS CSCD 2020年第4期952-958,共7页
Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically ... Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance.The resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of magnitude.These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature.Compared with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 times.Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x<3),as proved by photoemission spectroscopy.Additionally,the p-doped devices exhibit excellent stability in ambient air.Our findings show significant potential in future nanoelectronic and optoelectronic applications. 展开更多
关键词 MoTe2 ultraviolet ozone surface charge transfer Schottky barrier air stable hole doping
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