Cobalt has become a new type of barrier material with its unique advantages since the copper-interconnects in the great-large scale integrated circuits （GLSI） into 10 nm and below technical nodes, but cobalt and cop...Cobalt has become a new type of barrier material with its unique advantages since the copper-interconnects in the great-large scale integrated circuits （GLSI） into 10 nm and below technical nodes, but cobalt and copper have severe galvanic corrosion during chemical-mechanical flattening. The effect of 1,2,4-triazole on Co/Cu galvanic corrosion in alkaline slurry and the control of rate selectivity of copper and cobalt were investigated in this work. The results of electrochemical experiments and polishing experiments had indicated that a certain concentration of 1,2,4-triazole could form a layer of insoluble and dense passive film on the surface of cobalt and cop- per, which reduced the corrosion potential difference between cobalt and copper. Meantime, the removal rate of cobalt and copper could be effectively controlled according to demand during the CMP process. When the study optimized slurry was composed of 0.5 wt% colloidal silica, 0.1%vol. hydrogen peroxide, 0.05 wt% FA/O, 345 ppm 1,2,4-triazole, cobalt had higher corrosion potential than copper and the galvanic corrosion could be reduced effectively when the corrosion potential difference between them decreased to 1 mV and the galvanic corrosion current density reached 0.02 nA/cm2. Meanwhile, the removal rate of Co was 62.396 nm/min, the removal rate of Cu was 47.328 nm/min, so that the removal rate ratio of cobalt and copper was 1.32 ： 1, which was a good amendment to the dishing pits. The contact potential corrosion of Co/Cu was very weak, which could be better for meeting the requirements of the barrier CMP.展开更多
基金Project supported by the Major National Science and Technology Special Projects(No.2016ZX02301003-004-007)the Natural Science Foundation of Hebei Province,China(No.F2015202267)the Outstanding Young Science and Technology Innovation Fund of Hebei University of Technology(No.2015007)
文摘Cobalt has become a new type of barrier material with its unique advantages since the copper-interconnects in the great-large scale integrated circuits （GLSI） into 10 nm and below technical nodes, but cobalt and copper have severe galvanic corrosion during chemical-mechanical flattening. The effect of 1,2,4-triazole on Co/Cu galvanic corrosion in alkaline slurry and the control of rate selectivity of copper and cobalt were investigated in this work. The results of electrochemical experiments and polishing experiments had indicated that a certain concentration of 1,2,4-triazole could form a layer of insoluble and dense passive film on the surface of cobalt and cop- per, which reduced the corrosion potential difference between cobalt and copper. Meantime, the removal rate of cobalt and copper could be effectively controlled according to demand during the CMP process. When the study optimized slurry was composed of 0.5 wt% colloidal silica, 0.1%vol. hydrogen peroxide, 0.05 wt% FA/O, 345 ppm 1,2,4-triazole, cobalt had higher corrosion potential than copper and the galvanic corrosion could be reduced effectively when the corrosion potential difference between them decreased to 1 mV and the galvanic corrosion current density reached 0.02 nA/cm2. Meanwhile, the removal rate of Co was 62.396 nm/min, the removal rate of Cu was 47.328 nm/min, so that the removal rate ratio of cobalt and copper was 1.32 ： 1, which was a good amendment to the dishing pits. The contact potential corrosion of Co/Cu was very weak, which could be better for meeting the requirements of the barrier CMP.
