In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained fr...In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.展开更多
基金Project supported by the National Grand Fundamental Research 973 Program of China (Grant No. 2010CB327704)the National Natural Science Foundation of China (Grant Nos. 10974013 and 60978060)+3 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090009110027)the Natural Science Foundation of Beijing,China (Grant No. 1102028)the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60825407)Beijing Municipal Science and Technology Commission (Grant No. Z090803044009001)
文摘In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.
