The interpenetrating polymer networks (IPN) thin film with the –C=O group in one network and the terminal –N=C=O group in another network on an aluminum substrate to reinforce the adherence between IPN and aluminum ...The interpenetrating polymer networks (IPN) thin film with the –C=O group in one network and the terminal –N=C=O group in another network on an aluminum substrate to reinforce the adherence between IPN and aluminum through interfacial reactions, were obtained by dip-pulling the pretreated aluminum substrate into the viscous-controlled IPN precursors and by the following thinning treatment to the IPN film to a suitable thickness. The interfacial actions and the adhesion strengths of the IPN on the pretreated aluminum substrate were investigated by the X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and strain-stress(?-?) measurements. The XPS and FTIR detection results indicated that the elements’ contents of N, O, and Al varied from the depths of IPN. The in-terfacial reaction occurred between the –N=C=O group of IPN and the AlO(OH) of pretreated aluminum. The in-creased force constant for –C=O double bond and the lower frequency shift of –C=O stretching vibration absorption peak both verified the formation of hydrogen bond between the –OH group in AlO(OH) and the –C=O group in IPN. The adherence detections indicated that the larger amount of –N=C=O group in the IPN, the higher shear strengths between the IPN thin film and the aluminum substrate.展开更多
Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we ex...Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2 O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge＇s parameter is about 1.18×10^-3.Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10^18 cm^-3eV^-1.展开更多
Amorphous silicon （ a-Si ） thin films were deposited on glass substrate by PECVD, and polycrystalline silicon （ poly- Si ） thin films were prepared by aluminum- induced crystallization （ AlC ）. The effects of an...Amorphous silicon （ a-Si ） thin films were deposited on glass substrate by PECVD, and polycrystalline silicon （ poly- Si ） thin films were prepared by aluminum- induced crystallization （ AlC ）. The effects of annealing temperature on the microstructure and morphology were investigated. The AlC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400℃ for 20 min, a-Si films begin to crystallize after annealing at 450 ℃ for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing termperature.展开更多
Aluminum Nitride films were grown on and Si (100) substrate by D.C. reactive magnetron sputtering at room temperature. Influence of sputter deposition time on properties of the AlN films was studied. Structural optica...Aluminum Nitride films were grown on and Si (100) substrate by D.C. reactive magnetron sputtering at room temperature. Influence of sputter deposition time on properties of the AlN films was studied. Structural optical and electrical properties of the film were investigated. XRD measurements showed the presence of hexagonal wurtzite structure. The optical reflectance spectra of the film were taken and the band gap calculated varied from 4.35 to 5.3 eV. Finally MIS capacitors were fabricated on silicon substrates and variation of dielectric parameter with deposition time was reported.展开更多
The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were in- vestigated by optical microscopy （OM） and scanning electron microscopy （SEM）. The ano...The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were in- vestigated by optical microscopy （OM） and scanning electron microscopy （SEM）. The anodic oxidation was performed at 25℃ and a con- stant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the ap- proximate ranges of 10~20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.展开更多
Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature o...Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show(100)and(002) unique preferential orientations, respectively. After inserting Zr(50)Cu(50) layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO(100 nm)/Zr(50)Cu(50)(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr(50)Cu(50)(4 nm) film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.展开更多
Thin sheets (20 μm - 30 μm) of an aluminum-scandium alloy were manufactured by magnetron sputtering with a homogeneous thickness distribution. The influence of bias voltage on the sheet properties was investigated. ...Thin sheets (20 μm - 30 μm) of an aluminum-scandium alloy were manufactured by magnetron sputtering with a homogeneous thickness distribution. The influence of bias voltage on the sheet properties was investigated. Steel sheets of 100 μm were employed as substrate and were coated in a dc magnetron sputtering unit fitted with a rectangular target of aluminum 2.0 w% scandium master alloy. After deposition, the substrates were dissolved in an oxidizing medium and thus freestanding aluminum-scandium thin films were obtained. The homogeneous thickness was achieved by a reciprocal movement of the substrate. The influence of a radio frequency bias voltage on the coating properties was investigated. The bias voltage resulted in an important coarsening of the columnar structure as well as an increase of the roughness and hardness. Additionally, a low bias voltage could intensively reduce the coating defect density without altering too much the sheet properties.展开更多
Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing cry...Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.展开更多
Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, st...Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, structural property and surface topography was investi- gated. The appearance of electrical resistivity shows their semiconducing properties. In most of the visible light band, all the AZO films present transparency of more than 80 %. A1 doping suppresses the AZO film crystallization. When the A1 doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. A1 doping improves the roughness of i-ZnO film. The root mean square （RMS） roughness of samples prepared by ALD is much smaller than that pre- pared by radio-frequency magnetron sputtering reported.展开更多
A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480...A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al2O3, which was formed at the early stage of annealing.展开更多
文摘The interpenetrating polymer networks (IPN) thin film with the –C=O group in one network and the terminal –N=C=O group in another network on an aluminum substrate to reinforce the adherence between IPN and aluminum through interfacial reactions, were obtained by dip-pulling the pretreated aluminum substrate into the viscous-controlled IPN precursors and by the following thinning treatment to the IPN film to a suitable thickness. The interfacial actions and the adhesion strengths of the IPN on the pretreated aluminum substrate were investigated by the X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and strain-stress(?-?) measurements. The XPS and FTIR detection results indicated that the elements’ contents of N, O, and Al varied from the depths of IPN. The in-terfacial reaction occurred between the –N=C=O group of IPN and the AlO(OH) of pretreated aluminum. The in-creased force constant for –C=O double bond and the lower frequency shift of –C=O stretching vibration absorption peak both verified the formation of hydrogen bond between the –OH group in AlO(OH) and the –C=O group in IPN. The adherence detections indicated that the larger amount of –N=C=O group in the IPN, the higher shear strengths between the IPN thin film and the aluminum substrate.
基金Supported by the National Natural Science Foundation of China under Grant No 61574048the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2015B090901048the Pearl River S&T Nova Program of Guangzhou under Grant No 201710010172
文摘Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2 O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge＇s parameter is about 1.18×10^-3.Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10^18 cm^-3eV^-1.
文摘Amorphous silicon （ a-Si ） thin films were deposited on glass substrate by PECVD, and polycrystalline silicon （ poly- Si ） thin films were prepared by aluminum- induced crystallization （ AlC ）. The effects of annealing temperature on the microstructure and morphology were investigated. The AlC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400℃ for 20 min, a-Si films begin to crystallize after annealing at 450 ℃ for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing termperature.
文摘Aluminum Nitride films were grown on and Si (100) substrate by D.C. reactive magnetron sputtering at room temperature. Influence of sputter deposition time on properties of the AlN films was studied. Structural optical and electrical properties of the film were investigated. XRD measurements showed the presence of hexagonal wurtzite structure. The optical reflectance spectra of the film were taken and the band gap calculated varied from 4.35 to 5.3 eV. Finally MIS capacitors were fabricated on silicon substrates and variation of dielectric parameter with deposition time was reported.
基金financially supported by the National Nature Science Foundation of China (No. 21371019)the Aero Science Foundation of China (No. 2011ZE51057)
文摘The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were in- vestigated by optical microscopy （OM） and scanning electron microscopy （SEM）. The anodic oxidation was performed at 25℃ and a con- stant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the ap- proximate ranges of 10~20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.
基金Project supported by the National Natural Science Foundation of China(Grant No.51571085)the Key Science and Technology Program of Henan Province,China(Grant No.19212210210)+1 种基金the Foundation of Henan Educational Committee,China(Grant No.13B430019)the Henan Postdoctoral Science Foundation,China。
文摘Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show(100)and(002) unique preferential orientations, respectively. After inserting Zr(50)Cu(50) layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO(100 nm)/Zr(50)Cu(50)(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr(50)Cu(50)(4 nm) film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.
文摘Thin sheets (20 μm - 30 μm) of an aluminum-scandium alloy were manufactured by magnetron sputtering with a homogeneous thickness distribution. The influence of bias voltage on the sheet properties was investigated. Steel sheets of 100 μm were employed as substrate and were coated in a dc magnetron sputtering unit fitted with a rectangular target of aluminum 2.0 w% scandium master alloy. After deposition, the substrates were dissolved in an oxidizing medium and thus freestanding aluminum-scandium thin films were obtained. The homogeneous thickness was achieved by a reciprocal movement of the substrate. The influence of a radio frequency bias voltage on the coating properties was investigated. The bias voltage resulted in an important coarsening of the columnar structure as well as an increase of the roughness and hardness. Additionally, a low bias voltage could intensively reduce the coating defect density without altering too much the sheet properties.
基金Supported by the National Natural Science Foundation of China under Grant No 10175030, and the Natural Science Foundation of Gansu Province under Grant No 4WS035-A72-134.
文摘Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.
基金financially supported by the National Basic Research Program of China(No.2011CBA00600)the National Natural Science Foundation of China(No.61275025)
文摘Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, structural property and surface topography was investi- gated. The appearance of electrical resistivity shows their semiconducing properties. In most of the visible light band, all the AZO films present transparency of more than 80 %. A1 doping suppresses the AZO film crystallization. When the A1 doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. A1 doping improves the roughness of i-ZnO film. The root mean square （RMS） roughness of samples prepared by ALD is much smaller than that pre- pared by radio-frequency magnetron sputtering reported.
基金supported by the National Basic Research Program of China ("973" Project) (Grant No 2010CB933803)the National Natural Science Foundation of China (Grant No 2102042)the Visiting Scholar Foundation of State Key Lab of Silicon Materials, Zhejiang Uni-versity ( Grant No SKL 2009-12)
文摘A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al2O3, which was formed at the early stage of annealing.
