Amorphous InGaZnO （a-IGZO） film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO...Amorphous InGaZnO （a-IGZO） film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO films decrease with the increase of annealing temperature. Etching taper angle is less than 60° and critical dimension （CD） loss is less than 1μm in over-etching time of 30 s. The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor （TFT） array process.展开更多
基金supported by the Science and Technology Commission of Shanghai Municipality(Grant Nos.09111100702,10DZ1100102)
文摘Amorphous InGaZnO （a-IGZO） film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO films decrease with the increase of annealing temperature. Etching taper angle is less than 60° and critical dimension （CD） loss is less than 1μm in over-etching time of 30 s. The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor （TFT） array process.
