Electrodeposition of Ni-W Amorphous Alloy and Ni-W-SiC Composite Deposits

Ni-W alloys and their composite deposits are electroplated on the metals when an appropriate complex agent is selected on the base of the theories of electrochemistry and complex chemistry, and the principle of induced codeposition. Effects of the bath composition, pH value, temperature and current density on the electrode position of Ni-W alloys and their composite deposits have been investigated, and the effect of heat treatment temperature on the hardness, structure and cohesive force of the amorphous Ni-W alloys and their composite deposits are also discussed. Results showed that the alloys containing more than 44 wt pct W content and the composite deposits containing 7.8 wt pct SiC content could be obtained by making use of the appropriate bath composition and plating conditions. Alloys and their composite deposits with over 44 wt pct W content show amorphous structure. The hardness of amorphous Ni-W alloys and their composite deposits increases obviously when heated, and can reach to 1350 HV and 1520 HV respectively for 46 wt pct W content. The cohesion on Cu, carbon steel and stainless steel is very good.

Deposition of Amorphous Carbon Films using ECR Plasma byVarying the Substrate Temperature

Amorphous hydrogenated carbon thin films have been deposited with benzene plasma in an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition system. The characteristic of Benzene discharge plasma has been monitored by Mast spectrometry. It shows that the majority of the plasma species in the downstream ECR Plasma with benzene as gas source are acetylene, ethylene and higher mass species. In the experiments, the effects of the substrate temperature on the deposition rates have been emphatically studied. The structures of the films were analyzed by FTIR and Ramam spectrum.The results show that when the substrate temperature rises, the deposition rate drops down, the hydrogen Foment decreases, with the higher SP3 content being presented in the film.

Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma

a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radicals in plasma originating from source gases dissociation are analyzed by relative irradiance measurement. The bonding configurations and binding state of a-C:F films are measured with Fourier-transformed infrared spectrometer (FTIR) and x-ray photoelectron spectroscopy (XPS). The results show that a-C:F films are mainly composed of CF radical at lower powers but of CF2 radical at higher powers. The deposition of films is related to the radicals generated in plasma and the main bonding configurations are dependent on the ratio of CF to CF2 radicals in films.

Plasma Deposition of Fluorinated Amorphous Carbon with CHF_3 and C_6H_6 Mixture

A-C:F, H film have been studied because of their low dielectric constant for application in interlayer dielectric in ULSC. These films were deposited by ECR plasma Reactor with CHF3 and C6H6 mixture as source gas. The effects of microwave power, pressure and CHF3/C6H6 ratios on the film deposition rates have been investigated. The fluorocarbon and hydrocarbon radical species in the plasma discharges were analyzed by using the optical emission spectra. It demonstrates that CF2, CF and CH radicals play the important roles in the films being formed.

PLD Preparation of GeS_6 Amorphous Film and Investigation on Its Photo-induced Darkening Phenomenon

GeS6 chalcogenide amorphous fi lm was deposited on glass substrate via PLD（pulsed laser deposition） technique. The performance and structure of the fi lm was characterized by XRD（X-ray diffraction）, SEM（Scanning Electron Microscopy）, EDS（Energy Dispersive Spectroscopy）, optical transmission spectra, and Raman spectra, etc. The GeS6 amorphous fi lm was irradiated by 532 nm linearly polarized light, and its photoinduced darkening was investigated. The results showed that the GeS6 chalcogenide amorphous fi lm was smooth and compact with uniform thickness and combined with the substrate fi rmly, and its chemical composition was in consistency with the bulky target. When laser energy was fi xed, the transparence of the fi lm declined with the increase of the laser irradiation time. Obvious photo-induced darkening and relaxation phenomenon of the fi lm after laser irradiation were observed in this investigation.

Growth of carbon nanotube arrays on various CtxMey alloy films by chemical vapour deposition method

Carbon nanotube （CNT） arrays were fabricated on Ct-Me-N-（O） alloys with content of Ct in the range of 6-40 at.% by chemical vapour deposition. The Ct was a catalytic metal from the group of the following elements： Ni, Co, Fe, Pd, while Me was a transition metal from the group of IV-VII of the periodic table （where Me=Ti, V, Cr, Zr, Nb, Mo, Ta, W, Re）. Carbon nanotubes were found to grow efficiently on the alloy surface with its composition containing Ti, V, Cr, Zr, Hf, Nb or Ta. The growth of CNTs was not observed when the alloy contained W or Re. Additions of oxygen and nitrogen in the alloy facilitated the formation of oxynitrides and catalyst extrusion on the alloy surface. Replacement of the metals in alloy composition affected the diameter of the resulting CNTs. The obtained results showed that the alloy films of varying thickness （10-500 nm） may be used for the CNTs growth. The resulting CNT material was highly homogenous and its synthesis reproducible.