SHORT-RANGE ORDER STRUCTURES OF Fe-Ge AMORPHOUS THIN FILMS

The short-range order structures of Fe_xGe_(1-x) amorphous thin films,(x=8.7,19.1 and 28.5%)have been studied by means of X-ray absorption spectrum.The nearest neighbors around a Ge or an Fe atom are constituted by two coordinate sub-shells with a very short dis- tance,In two films with lower Fe content,structural parameters of the nearest neighbors around a Ge atom are very near to that in amorphous germanium,and the positions of Fe at- oms are randomly substitutional.But when x=28.5%,some great changes occur on the short-range order structure of a-Fe_xGe_(1-x) film:its structure deviates from continuous ran- dora network and tends toward dense random packing of atoms.Meanwhile,there is a strong- er interaction between near neighboring Fe-Ge atoms in a-Fe_xGe_(1-x) films.

Out-of-Plane Magnetic Anisotropy and Microwave Permeability of Magnetoelastic FeCoSiB Amorphous Thin Films

Theamorphous magnetoelastic Fe66Co17Si1B6 thin films have been deposited by dc magnetron sputtering. A lot of ＂nano-trenches＂ have been observed on the fdm surfaces by AFM. The permeability of amorphous Fe66COlTSilB6 thin films was measured within the frequency range of 0.6GHz-10.2 GHz. The ferromagnetic resonance frequency was found to be 1.2 GHz. MFM shows that the domain of thin film is a maze-type pattern, which indicates that an out-of-plane magnetic anisotropy exists. The out-of-plane anisotropy is believed due to the stress-induced magnetic anisotropy. It can be inferred that the internal stress is tensile stress and normal to the film plane. Index Terms

THIN FILM PREPARATION OF AMORPHOUS Ti-Ni ALLOY AND THEIR HYDROGEN ABSORPTION PROPERTIES

Amorphous Ti_(0.88)Ni_(1.00) and Ti_(1.69)Ni_(1.00) alloy films are prepared by means of ion beam sputtering using TiNi and Ti_2Ni alloy targets, respectively. Their hydrogen absorption properties are investigated by a galvanostatic method. The results show th the discharge capacity of the Ti_(1.69)Ni_(1.00) sample is higher than that of the Ti_(0.88)Ni_(1.00) sample. And the film electrodes have high durability and long cycle life.

Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2 O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge＇s parameter is about 1.18×10^-3.Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10^18 cm^-3eV^-1.

Fabrication of Poly-Si Thin Film on Glass Substrate by Aluminum-induced Crystallization

Amorphous silicon （ a-Si ） thin films were deposited on glass substrate by PECVD, and polycrystalline silicon （ poly- Si ） thin films were prepared by aluminum- induced crystallization （ AlC ）. The effects of annealing temperature on the microstructure and morphology were investigated. The AlC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400℃ for 20 min, a-Si films begin to crystallize after annealing at 450 ℃ for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing termperature.

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

The influence of white light illumination on the stability of an amorphous In GaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.

Fast Transmission Photothermal Radiometry via Sampling by an Internal Computer Sound Card

During the last few decades, photothermal radiometry（PTR） has been greatly developed and widely applied in the field of nondestructive testing. However, the traditional PTR system employs an expensive lock-in amplifier to detect the weak photothermal signal, which leads to high cost and long test time. In this paper, a fast transmission PTR system based on sampling by using an internal computer sound card was developed to lower the system cost and shorter the test time. A piece of amorphous silicon（a：Si） thin film solar cells with artificial defects was prepared and tested by the system. The results show that the sharpened defects can be identified easily and quickly according to the significant peaks of the original infrared signal sampled by the internal computer sound card. Furthermore, more detailed defects can be investigated by processing the infrared signal. These validate the effectiveness of the proposed transmission PTR system as a low cost and efficient non-destructive test technique.