Impact of amplified spontaneous emission noise on the SRS threshold of high-power fiber amplifiers

Impact of amplified spontaneous emission(ASE)noise on the stimulated Raman scattering(SRS)threshold of highpower fiber amplifiers is demonstrated numerically through a spectral evolution approach.The simulation results confirm that ASE noise in the Raman wavelength band could reduce the SRS threshold of high-power fiber amplifiers significantly.As for ASE noise originated the main amplifier,it becomes stronger and reduces the SRS threshold at shorter operation wavelength below 1052 nm.As for ASE noise originated from the seed laser,it reduces the SRS threshold at different operation wavelength under the condition that the Raman ratio is over-90 dB in the seed laser.The theoretical method and results in this work could provide a well reference to extend the operation wavelength of high-power fiber lasers.

5G Wideband Bandpass Filtering Power Amplifiers Based on a Bandwidth-Extended Bandpass Matching Network

In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined as a variable in the closedform equations provided by the microstrip bandpass filter.It can be extended over a wide range only by changing the characteristic impedances of the structure.Different from the other wideband MNs,the extension of bandwidth does not increase the complexity of the structure(order n is fixed).In addition,based on the bandwidth-extended structure,the wideband design of bandpass filtering PA is not limited to the fixed bandwidth of the specific filter structure.The theoretical analysis of the MN and the design flow of the PA are provided in this design.The fabricated bandpass filtering PA can support almost one-octave bandwidth(2-3.8 GHz),covering the two 5G bands(n41 and n78).The drain efficiency of 47%-60%and output power higher than 40 dBm are measured.Good frequency selectivity in S-parameter measurements can be observed.

Research Towards Terahertz Power Amplifiers in Silicon-Based Process

In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.

Bidirectional Erbium Doped Fiber Amplifiers

Bidirectional EDFAs(Bi-EDFAs)featuring bidirectional signal input are theoreticallystudied.Gain and noise performances of Bi-EDFAs are analysed numerically and comparedwith that of other optical amplifiers.Applications of Bi-EDFAs in fiber networks and otherfields are considered.

Step memory polynomial predistorter for power amplifiers with memory

To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.

Adaptive Digital Predistortion Schemes to Linearize RF Power Amplifiers with Memory Effects

To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.

RESEARCH ON NONLINEAR DISTORTION IN AMPLIFIERS

Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.

Performance Enhancement of Praseodymium Doped Fiber Amplifiers

In this paper,we report a simulation study on the performance enhancement of Praseodymium doped silica fiber amplifiers(PDFAs)in O-band(1270-1350 nm)in terms of small signal gain,power conversion efficiency(PCE),and output optical power by employing bidirectional pumping.The PDFA performance is examined by optimizing the length of Praseodymium doped silica fiber(PDF),its mode-field diameter(MFD)and the concentration of Pr^(3+).A small-signal peak gain of 56.4 dB,power conversion efficiency(PCE)of 47%,and output optical power of around 1.6 W(32 dBm)is observed at optimized parameters for input signal wavelength of 1310 nm.Minimum noise figure(NF)of 4.1 dB is observed at input signal wavelength of 1310 nm.Moreover,the effect of varying the pump wavelength and pump power on output optical power of the amplifier and amplified spontaneous emission(ASE)noise is also investigated,respectively.Finally,the impact of ion-ion interaction(up-conversion effect)on small-signal gain of the amplifier is also studied by considering different values of up-conversion coefficient.

Quantum-dot Semiconductor Optical Amplifiers in State Space Model

A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA′s static and dynamic characteristics with high accuracy.

Behavioral modeling of RF power amplifiers with time-delay feed-forward neural networks

A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.

Wavelet network based predistortion method for wideband RF power amplifiers exhibiting memory effects

RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryless predistortion cannot linearize PAs effectively. After analyzing PA memory effects, a novel predistortion method based on wavelet networks (WNs) is proposed to linearize wideband RF power amplifiers. A complex wavelet network with tapped delay lines is applied to construct the predistorter and then a complex backpropagation algorithm is developed to train the predistorter parameters. The simulation results show that compared with the previously published feed-forward neural network predistortion method, the proposed method provides faster convergence rate and better performance in reducing out-of-band spectral regrowth.

Robust Digital Predistortion for LTE/5G Power Amplifiers Utilizing Negative Feedback Iteration

A robust digital predistortion(DPD)technique utilizing negative feedback iteration is introduced for linearizing power amplifiers(PAs)in long term evolution(LTE)/5G systems.Different from the conventional direct learning and indirect learning structure,the proposed DPD suggests a two-step method to identify the predistortion.Firstly,a negative feedback based iteration is used to estimate the optimal DPD signal.Then the corresponding DPD parameters are extracted by forward modeling with the input signal and optimal DPD signal.The iteration can be applied to both single-band and dual-band PAs,which will achieve superior linear performance than the conventional direct learning DPD while having a relatively low computational complexity.The measurement is carried out on a broadband Doherty PA(DPA)with a 200 MHz bandwidth LTE signal at 2.1 GHz,and on a 5G DPA with two 10 MHz LTE signals at 3.4/3.6 GHz for validation in dual-band scenarios.

An Envelope Hammerstein Model for Power Amplifiers

In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established nonlinear time series method to determine model structure. Then, we discuss the process of model parameter extraction in detailed. Finally, a 2 W WCDMA power amplifier is measured to verify the performance of EH model, and good agreement between model output and measurement result shows our model can accurately predict output characteristic of the power amplifier.

Analytic approach to the small-signal frequency response of saturated semiconductor optical amplifiers using multisection model

An analytic solution derived by multisection model to the small-signal frequency response （SSFR） of wavelength conversion based on cross-gain modulation （XGM） in semiconductor optical amplifiers （SOAs） is presented. The result contains details that can affect the characteristics of SSFR significantly more than previous ones.

Volterra series based predistortion for broadband RF power amplifiers with memory effects

RF power amplifiers （PAs） are usually considered as memoryless devices in most existing predistortion techniques. However, in broadband communication systems, such as WCDMA, the PA memory effects are significant, and memoryless predistortion cannot linearize the PAs effectively. After analyzing the PA memory effects, a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects. The indirect learning architecture is adopted to design the predistortion scheme and the reeursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter. Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively.

Multislice behavioral modeling based on envelope domain for power amplifiers

An envelope domain multislice behavioral modeling is introduced. The tradition AM-AM and AM- PM characteristics of power amplifiers axe extended to envelope domain and base-band filter is applied to distortion complex envelope signal for description of the envelope memory effect. Using traditional one and two-tone tests, the coefficients of nonlinear model and the FIR filter can be extracted. At last the model has been applied to a 10 W WCDMA Power amplifier to predict its output signal. And simulation results show that the model output conforms very well to the traditional transistor level simulation results.

Symbolic Macromodeling for Statistical Simulation of Operational Amplifiers

Symbolic circuit simulator is traditionally applied to the small-signal analysis of analog circuits. This paper establishes a symbolic behavioral macromodeling method applicable to both small-signal and large-signal analysis of general two-stage operational amplifiers （op-amps）. The proposed method creates a two-pole parametric macromodel whose parameters are analytical functions of the circuit element parameters generated by a symbolic circuit simulator. A moment matching technique is used in deriving the analytical model parameter. The created parametric behavioral model can be used for op-amps performance simulation in both frequency and time domains. In particular, the parametric models are highly suited for fast statistical simulation of op-amps in the time-domain. Experiment results show that the statistical distributions of the op-amp slew and settling time characterized by the proposed model agree well with the transistor-level results in addition to achieving significant speedup.

Generation of broadly tunable picosecond mid-infrared laser and sensitive detection of a mid-infrared signal by parametric frequency up-conversion in MgO:LiNbO_3 optical parametric amplifiers

Picosecond optical parametric generation and amplification in the near-infrared region within 1.361-1.656 μm and the mid-infrared region within 2.976-4.875 μm is constructed on the basis of bulk MgO：LiNbO 3 crystals pumped at 1.064 μm.The maximum pulse energy reaches 1.3 mJ at 1.464 μm and 0.47 mJ at 3.894 μm,corresponding to a pumpto-idler photon conversion efficiency of 25%.By seeding the hard-to-measure mid-infrared radiation as the idler in the optical parametric amplification and measuring the amplified and frequency up-converted signal in the near-infrared or even visible region,one can measure very week mid-infrared radiation with ordinary detectors,which are insensitive to mid-infrared radiation,with a very high gain.A maximum gain factor of about 7 脳 10 7 is achieved at the mid-infrared wavelength of 3.374 μm and the corresponding energy detection limit is as low as about 390 aJ per pulse.

Effect of Soliton Propagation in Fiber Amplifiers

The propagation of optical solitons in fiber amplifiers is discussed by considering a model that includes linear high order dispersion, two photon absorption, nonlinear high order dispersion, self induced Ramam and five order nonlinear effects. Based on travelling wave method, the solutions of the nonlinear Schr dinger equations, and the influence on soliton propagation as well as high order effect in the fiber amplifier are discussed in detail. It is found that because of existing five order nonlinear effect, the solution is not of secant hyperbola type, but shows high gain state of the fiber amplifier which is very favourable to the propagation of solitons.

Numerical Spectral Model Based on BPMfor Er-doped Waveguide Amplifiers

A spectral numerical analysis method to analyze the Er-doped waveguide amplifiers(EDWA) in wavelength division multiplexing is presented. This model is based on finite difference beam propagation method modified by Douglas scheme, which can efficiently reduce the truncation error and time consumption. By superposing the Lorentzian function for the experimental curves, the spectral properties of EDWA can be investigated. Results show that the pump efficiency of EDWA pumped at 980nm is higher than that at 1480nm. Meanwhile, by rationally increasing the pump length and the erbium concentration, larger signal gains can be acquired. Taking account of the up-conversion and cross-relaxation effects of cooperation, the spectrum analysis of highly doped EDWA is carried out over a wider frequency band.