Dear Editor: There is accumulating evidence that human blood electronic circuit components and their application circuits become more and more important to cyborg implant/engineering, man-machine interface, hu- man ...Dear Editor: There is accumulating evidence that human blood electronic circuit components and their application circuits become more and more important to cyborg implant/engineering, man-machine interface, hu- man disease detection and healing, and artificial brain evolutionusl. Here, we report the first development of human plasma-based amplifier circuit in the dis- crete as well as integrated circuit (IC) configuration mode. Electrolytes in the human blood contain an enormous number of charge carriers such as positive and negative molecule/atom ions, which are electri- cally conducting media and therefore can be utilized for developing electronic circuit components and their application circuits. These electronic circuits obvi- ously have very high application impact potential towards bio-medical engineering and medical science and technology.展开更多
Dear Editor:Kosta et al.;first ever reported the development of biologic electronic components viz resistance R,capacitance C,diode D and transistor T using human tissues and human skin.In our early study;,we have dem...Dear Editor:Kosta et al.;first ever reported the development of biologic electronic components viz resistance R,capacitance C,diode D and transistor T using human tissues and human skin.In our early study;,we have demonstrated the feasibility of liquid medium(synthetic blood plasma)to develop bio-transistor,bio-resistor,and bio-capacitor and combined them to form an amplifier using the metallic harness(the interconnecting展开更多
A 1.34 GHz-1=60 MHz low noise amplifier (LNA) designed in a 0.35 pm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz. The linearity is im...A 1.34 GHz-1=60 MHz low noise amplifier (LNA) designed in a 0.35 pm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz. The linearity is improved with an active biasing technique. The post-layout simulation shows an input referred 1-dB compression point (IPldn) of-11.52 dBm. Compared with the recent reported high gain LNAs, the proposed LNA has a much better linearity without degrading other performance. The LNA draws 10 mA current from a 3.3 V power supply.展开更多
A new probe for atmospheric electric field mill is introduced.It consists of three parts:signal acquisition circuit for atmospheric electric field,preamplifier circuit and phase sensitive detection circuit.The signal...A new probe for atmospheric electric field mill is introduced.It consists of three parts:signal acquisition circuit for atmospheric electric field,preamplifier circuit and phase sensitive detection circuit.The signal acquisition circuit adopts the double-stator structure to form differential input circuit,thus double-precision is obtained.Preamplifier circuit is made of current-to-voltage (I-V) conversion circuit,differential amplifier circtuit and secondary amplifying circuit.The polarity of electric field is obtained via phase sensitive detection circuit.Simulation results are obtained using Multisim,and the feasibility of the designed probe is verified.展开更多
This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors(DHBTs)transferred to RF CMOS wafer substrate.The measurement results show that the maximum values of the DC cur...This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors(DHBTs)transferred to RF CMOS wafer substrate.The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,respectively.In order to have a detailed insight on the degradation of the RF performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably extracted.The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.展开更多
A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed.This structure is based on associating two sets of two capacitors in cross series during the amplificat...A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed.This structure is based on associating two sets of two capacitors in cross series during the amplification phase.This circuit permits the common-mode voltage of the sample signal to reach full swing.Using the charge-complement technique,the proposed amplifier can reduce the impact of parasitic capacitors on the gain accuracy effectively.Simulation results show that as sample signal common-mode voltage changes,the difference between the minimum and maximum gain error is less than 0.03%.When the capacitor mismatch is increased from 0 to 0.2%,the gain error is deteriorated by 0.00015%).In all simulations,the gain of amplifier is 69 dB.展开更多
A broadband programmable gain amplifier(PGA) with a small gain step and low gain error has been designed in 0.13 m CMOS technology. The PGA was implemented with open-loop architecture to provide wide bandwidth. A tw...A broadband programmable gain amplifier(PGA) with a small gain step and low gain error has been designed in 0.13 m CMOS technology. The PGA was implemented with open-loop architecture to provide wide bandwidth. A two-stage gain control method, which consists of a resistor ladder attenuator and an active fine gain control stage, provides the small gain step. A look-up table based gain control method is introduced in the fine gain control stage to lower the gain error.The proposedPGAshows a decibel-linear variable gainfrom4 to20 dB with a gain step of 0.1 dB and a gain error less than˙0.05 dB. The 3-dB bandwidth and maximum IIP3 are 3.8 GHz and 17 dBm, respectively.展开更多
文摘Dear Editor: There is accumulating evidence that human blood electronic circuit components and their application circuits become more and more important to cyborg implant/engineering, man-machine interface, hu- man disease detection and healing, and artificial brain evolutionusl. Here, we report the first development of human plasma-based amplifier circuit in the dis- crete as well as integrated circuit (IC) configuration mode. Electrolytes in the human blood contain an enormous number of charge carriers such as positive and negative molecule/atom ions, which are electri- cally conducting media and therefore can be utilized for developing electronic circuit components and their application circuits. These electronic circuits obvi- ously have very high application impact potential towards bio-medical engineering and medical science and technology.
文摘Dear Editor:Kosta et al.;first ever reported the development of biologic electronic components viz resistance R,capacitance C,diode D and transistor T using human tissues and human skin.In our early study;,we have demonstrated the feasibility of liquid medium(synthetic blood plasma)to develop bio-transistor,bio-resistor,and bio-capacitor and combined them to form an amplifier using the metallic harness(the interconnecting
文摘A 1.34 GHz-1=60 MHz low noise amplifier (LNA) designed in a 0.35 pm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure (NF) of 1.27 dB at 1.34 GHz. The linearity is improved with an active biasing technique. The post-layout simulation shows an input referred 1-dB compression point (IPldn) of-11.52 dBm. Compared with the recent reported high gain LNAs, the proposed LNA has a much better linearity without degrading other performance. The LNA draws 10 mA current from a 3.3 V power supply.
文摘A new probe for atmospheric electric field mill is introduced.It consists of three parts:signal acquisition circuit for atmospheric electric field,preamplifier circuit and phase sensitive detection circuit.The signal acquisition circuit adopts the double-stator structure to form differential input circuit,thus double-precision is obtained.Preamplifier circuit is made of current-to-voltage (I-V) conversion circuit,differential amplifier circtuit and secondary amplifying circuit.The polarity of electric field is obtained via phase sensitive detection circuit.Simulation results are obtained using Multisim,and the feasibility of the designed probe is verified.
基金Project supported by the National Natural Science Foundation of China(No.61331006)the Natural Science Foundation of Zhejiang Province(No.Y14F010017)
文摘This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors(DHBTs)transferred to RF CMOS wafer substrate.The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,respectively.In order to have a detailed insight on the degradation of the RF performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably extracted.The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.
基金supported by the National Natural Science Foundation of China(Nos.61036004,61076024)
文摘A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed.This structure is based on associating two sets of two capacitors in cross series during the amplification phase.This circuit permits the common-mode voltage of the sample signal to reach full swing.Using the charge-complement technique,the proposed amplifier can reduce the impact of parasitic capacitors on the gain accuracy effectively.Simulation results show that as sample signal common-mode voltage changes,the difference between the minimum and maximum gain error is less than 0.03%.When the capacitor mismatch is increased from 0 to 0.2%,the gain error is deteriorated by 0.00015%).In all simulations,the gain of amplifier is 69 dB.
文摘A broadband programmable gain amplifier(PGA) with a small gain step and low gain error has been designed in 0.13 m CMOS technology. The PGA was implemented with open-loop architecture to provide wide bandwidth. A two-stage gain control method, which consists of a resistor ladder attenuator and an active fine gain control stage, provides the small gain step. A look-up table based gain control method is introduced in the fine gain control stage to lower the gain error.The proposedPGAshows a decibel-linear variable gainfrom4 to20 dB with a gain step of 0.1 dB and a gain error less than˙0.05 dB. The 3-dB bandwidth and maximum IIP3 are 3.8 GHz and 17 dBm, respectively.