The analog performance of gate misaligned dual material double gate junctionless transistor is demonstrated for the first time. The cases considered are where misalignment occurs towards source side and towards drain ...The analog performance of gate misaligned dual material double gate junctionless transistor is demonstrated for the first time. The cases considered are where misalignment occurs towards source side and towards drain side. The analog performance parameters analyzed are： transconductance, output conductance, intrinsic gain and cut-off frequency. These figures of merits （FOMs） are compared with a dual material double gate inversion mode transistor under same gate misalignment condition. The impacts of different length of control gate （L 1） for a given gate length （L） are also studied and the optimum lengths La under misalignment condition to have better analog FOMs and high tolerance to misalignment are presented.展开更多
In this paper, charge-plasma-based tunnel FET is proposed by employing dual material gate with hetero gate dielectric technique and it is named hetero-dielectric dual material gate doping-less TFET（HD_DMG_DLTFET）. I...In this paper, charge-plasma-based tunnel FET is proposed by employing dual material gate with hetero gate dielectric technique and it is named hetero-dielectric dual material gate doping-less TFET（HD_DMG_DLTFET）. It is compared with conventional doping-less TFET（DLTFET） and dual material gate doping-less TFET（DMG_DLTFET） on the basis of analog and RF performance. The HD_DMG_DLTFET provides better ON state current（I_（ON） =94 μA/ μm）, I_（ON）/I_（OFF）（≈1.36×10^（13））, point（≈3 mV/dec） and average subthreshold slope（AV-SSD40.40 mV/dec）. The proposed device offers low total gate capacitance（C_（gg）/ along with higher drive current. However, with a better transconductance（g_m） and cut-off frequency（f_T）, the HD_DMG_DLTFET can be a good candidate for RF circuitry. The early voltage（V_（EA）/ and output conductance（gd/ are also moderate for the proposed device with comparison to other devices and therefore can be a candidate for analog devices.From all these simulation results and their study, it is observed that HD_DMG_DLTFET has improved analog/RF performance compared to DLTFET and DMG_DLTFET.展开更多
文摘The analog performance of gate misaligned dual material double gate junctionless transistor is demonstrated for the first time. The cases considered are where misalignment occurs towards source side and towards drain side. The analog performance parameters analyzed are： transconductance, output conductance, intrinsic gain and cut-off frequency. These figures of merits （FOMs） are compared with a dual material double gate inversion mode transistor under same gate misalignment condition. The impacts of different length of control gate （L 1） for a given gate length （L） are also studied and the optimum lengths La under misalignment condition to have better analog FOMs and high tolerance to misalignment are presented.
文摘In this paper, charge-plasma-based tunnel FET is proposed by employing dual material gate with hetero gate dielectric technique and it is named hetero-dielectric dual material gate doping-less TFET（HD_DMG_DLTFET）. It is compared with conventional doping-less TFET（DLTFET） and dual material gate doping-less TFET（DMG_DLTFET） on the basis of analog and RF performance. The HD_DMG_DLTFET provides better ON state current（I_（ON） =94 μA/ μm）, I_（ON）/I_（OFF）（≈1.36×10^（13））, point（≈3 mV/dec） and average subthreshold slope（AV-SSD40.40 mV/dec）. The proposed device offers low total gate capacitance（C_（gg）/ along with higher drive current. However, with a better transconductance（g_m） and cut-off frequency（f_T）, the HD_DMG_DLTFET can be a good candidate for RF circuitry. The early voltage（V_（EA）/ and output conductance（gd/ are also moderate for the proposed device with comparison to other devices and therefore can be a candidate for analog devices.From all these simulation results and their study, it is observed that HD_DMG_DLTFET has improved analog/RF performance compared to DLTFET and DMG_DLTFET.
