The analog performance of gate misaligned dual material double gate junctionless transistor is demonstrated for the first time. The cases considered are where misalignment occurs towards source side and towards drain ...The analog performance of gate misaligned dual material double gate junctionless transistor is demonstrated for the first time. The cases considered are where misalignment occurs towards source side and towards drain side. The analog performance parameters analyzed are： transconductance, output conductance, intrinsic gain and cut-off frequency. These figures of merits （FOMs） are compared with a dual material double gate inversion mode transistor under same gate misalignment condition. The impacts of different length of control gate （L 1） for a given gate length （L） are also studied and the optimum lengths La under misalignment condition to have better analog FOMs and high tolerance to misalignment are presented.展开更多
文摘The analog performance of gate misaligned dual material double gate junctionless transistor is demonstrated for the first time. The cases considered are where misalignment occurs towards source side and towards drain side. The analog performance parameters analyzed are： transconductance, output conductance, intrinsic gain and cut-off frequency. These figures of merits （FOMs） are compared with a dual material double gate inversion mode transistor under same gate misalignment condition. The impacts of different length of control gate （L 1） for a given gate length （L） are also studied and the optimum lengths La under misalignment condition to have better analog FOMs and high tolerance to misalignment are presented.
