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Anisotropic Magnetoresistance Effect in Amorphous and Nanocrystalline Fe(Cu,Nb)-Si-B Alloys 被引量:1
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作者 Deren LI, Zhichao LU, Guoqing LI and Ze XIANYU (Department of Physics, Northeastern University, Shenyang 110006, China) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2000年第2期165-166,共2页
The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated, it was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline all... The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated, it was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline alloy is much smaller than that of amorphous alloy, Indicating that the anisotropy of nanocrystalline alloy becomes smaller after crystallizing, and the smallest AMR is coincident with the excellent soft magnetic characteristics. It is believed that the smaller magnetic crystalline anisotropy is the origin of the excellent soft magnetic characteristics of nanocrystalline alloy. 展开更多
关键词 anisotropic magnetoresistance Effect in Amorphous and Nanocrystalline Fe Cu Nb Si-B Alloys AMR
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Modelling Magnetoresistance Effect in Limited Anisotropic Semiconductors
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作者 Filippov V.V. Mitsuk S.V. 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第7期212-214,共3页
A macroscopic model of the magnetoresistance effect in fimited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and fil... A macroscopic model of the magnetoresistance effect in fimited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and films. Based on a unified mathematical model the method is worked out enabling us to measure tensor components of the specific electrical resistance and the relative magnetoresistance of anisotropic semiconductors simultaneously. 展开更多
关键词 Modelling magnetoresistance Effect in Limited anisotropic Semiconductors
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