Investigation the improvement of high voltage spinel LiNi_(0.5)Mn_(1.5)O_(4) cathode material by anneal process for lithium ion batteries

The spinel LiNi_(0.5)Mn_(1.5)O_(4)(LNMO)has been attracted great attention as lithium ion cathode material due to its high voltage and large energy density.However,the practical application of LNMO is still limited by poor cycling stability.Herein,to improve the cycling stability of spinel LNMO,it was treated with anneal process at 900℃for 2 h after prepared by traditional solid-state method(LNMO-A).LNMO-A sample presented better electrochemical property especially under high rate,with capacity of 91.2 mAhg^(-1) after 1000 cycles under 10 C.Its superior electrochemical property was ascribed to the anneal process,resulting a stable crystal structure,indicated by XRD and Raman results of electrodes after 1000 cycles under 10 C and the longer solid-solution reaction,revealed by in-situ XRD.In addition,the optimized particle size,micro morphology and the larger BET area surface induced by the recrystallization in anneal process also contributes to its superior electrochemical property.What's more,the thin layer,which interacted LNMO-A particles with each other,induced by particles remelting in anneal process is also beneficial for its excellent electrochemical property.This study not only improved the electrochemical properties by anneal process,but also revealed the origins and mechanisms for its improvement.

Cube texture formation of Ni9.3W alloy substrates:preparation by optimized deformation sequence and anneal process

The Ni9.3W alloy with no ferromagnetism and high yield strength is one of the most promising textured substrate materials for coated conductors, but its low stacking fault energy makes it difficult to obtain a strong cube texture by traditional rolling methods and recrystal- lization anneals. This paper introduces four-time static recoveries during the rolling process. Rolled tapes with 80 μm in thickness were obtained by applying various deformation sequences between static recoveries to study their effects on the cube texture formation in Ni9.3W alloy substrates. The results show that rising gradient deformation sequence is an advantageous way to obtain a higher amount of cube texture, its content increases by 29.2% compared to that of traditional deformation sequence. The effect of the new recrystallization annealing process on the cube texture formation was analyzed. It is shown that the cube texture content increases with anneal temperature increasing in one-step anneal, but decreases again at higher anneal temperature. Two-step anneal could effectively improve the cube texture content, which could be further enhanced by extending holding time during the first-step anneal. However, too long holding time leads to the decrease in cube texture content. Finally, Ni9.3W alloy substrates with a cube texture content of -90.0 vol% （〈15°） are obtained by optimized two-step anneal.

Effects of Annealing Process on Crystallization and Low Temperature Resistance Properties of PP-R Composites

The effects of the annealing process on the mechanical properties and crystallization behaviors of polypropylene random copolymer（PP-R） composites were investigated using differential scanning calorimetry（DSC）, wide-angle X-ray diffraction（WAXD）, and dynamic mechanical analysis（DMA）, and scanning electron microscopy（SEM）. The experimental results indicated that the annealing process significantly influenced the comprehensive properties of PP-R composites. At temperatures below 23 ℃, the impact strength of the PP-R composites annealed at 120 ℃ for 6 h was relatively high at 74.73 k J/m^2, which was 16.8% higher than that of the samples annealed at 80 ℃ for 6 h. At low temperatures（-30-0 ℃）, the impact strength ranged from approximately 13.31 k J/m^2 to 54.4 k J/m^2. In addition, the annealing process conducted at 120 ℃ for 6 h improved the crystalline structure and low-temperature toughness of the PP-R composites and induced α-form to β-form crystal transformation. The work provides a possible method to reinforce and toughen the semicrystalline polymer at low temperatures（-30-0 ℃） by annealing.

Microstructures and Optical Properties of Sol-gel Derived Ba_(0.9)Sr_(0.1)TiO_3 Thin Films Formed by Different Annealing Process

We investigated the effect of annealing process on microstructures and optical properties of the sol-gel derived Ba0.9Sr0.1TiO3 （BST） films. The BST films, fabricated by layer-by-layer high-temperature （≥ 650 ℃） annealing process, had laminated structures consisting of alternating dense and porous BST layers, and exhibited excellent optical performance as Bragg reflectors. The Bragg reflection characteristic can be enhanced with increasing annealing temperature. Those BST films fabricated at temperatures lower than 650 ℃ displayed uniform cross-sectional morphologies even treated at a higher temperature. The difference in the microstructures of the BST thin films was also discussed.

Effect of annealing process on structures and ferroelectric properties of Ca_(0.4)Sr_(0.6)Bi_(3.95)Nd_(0.05)Ti_4O_(15) thin films

Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 （C0.4S0.6BNT） ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Effect of annealing process （time and temperature） on structures and ferroelectric properties of C0.4S0.6BNT thin film was investigated. The relative intensity of （200） peak increased first then decreased with annealing temperature and became predominant at 800 ℃. In contrast, no evident change could be observed in the （001） peak. The remnant polarization （Pr） and coercive field （Ec） for C0.4S0.6BNT film annealed at 800℃ for 5 min were 21.6μC/cm2 and 68.3 kV/cm, respectively.

Influence of Pressure on the Annealing Process of β-Ca_2SiO_4(C_2S) in Portland Cement

Portland cement is the most common type of cement in general use around the world as a basic ingredient of concrete, mortar, stucco, and non-speciality grout. Dicalcium silicate （Ca2SiO4） is the primary constituent of a number of different types of cement. The β-Ca2SiO4 phase is metastable at room temperature and will transform into β-Ca2SiO4 at 663K. In this work, Portland cement is annealed at a temperature of 950K under pressures in the range of 0-5.5 CPa. The high pressure experiments are carried out in an apparatus with six anvil tops. The effect of high pressure on the obtaining nano-size β-Ca2SiO4 （C2S） process is investigated by x-ray diffraction and transmission electron microscopy. Experimental results show that the grain size of the C2S decreases with the increase of pressure. The volume fraction of the C2S phase increases with the pressure as the pressure is below 3 CPa, and then decreases （P 〉 3 GPa）. The nano-effect is very important to the stabilization of β-Ca2SiO4. The mechanism for the effects of the high pressure on the annealing process of the Portland cement is also discussed.

Effect of hot-band annealing process on microstructure,texture,and r-value of final sheets of ferritic stainless steel

In this paper,the effect of different annealing processes on the microstructure,texture,and formability of ferritic stainless steel was studied in detail.The results showed that the grain size in the final sheet was larger and the recrystallization texture was more uniform after the final recrystallization annealing of hot-rolled steel with continuous annealing than that without annealing or with batch annealing.In addition,the final sheet had a higher average r-value and the lowest planar anisotropy.

Surface Carbonization of GaN and the Related Structure Evolution during the Annealing Process

To explain the stabilization mechanism of the carbon-ion-implanted GaN under the diamond growth environment,the luminescence characteristics and structure evolution correlative with sites＇ carbon atoms located for highfluence carbon-ion-implanted Ga N are discussed. GaN is implanted with carbon ion using fluence of 2×10^（17） cm^（-2） and energy of 45 keV. Then the implanted samples are annealed at 800℃ for 20 min and 1 h under the N_2 atmosphere. The luminescence characteristics of carbon-ion-implanted GaN are evaluated by photoluminescence spectrum at wavelength 325 nm. The lattice damage of Ga N is characterized by Raman spectrum and the corresponding vacancy-defect evolution before and after annealing is measured by slow positron annihilation. The results show that most of the carbon atoms will be located at the interstitial sites after carbon ion implantation due to the weak mobility. As the implanted samples are annealed, strong yellow luminescence is emitted and the vacancies for Ga（V_（Ga）） are reduced resulting from the migration of interstitial carbon（C_i） and formation of complexes（CGaand/or C_（Ga）-C_i） between them. As the annealing time is prolonged, the carbon ions accommodated by the vacancies are saturated, vacancy clusters with carbon atoms appear and the concentration of C_（Ga） diminishes, which will have an adverse effect on the diamond film nucleation and growth.

Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

In this study,indium oxide（In2O3） thin-film transistors（TFTs） are fabricated by two kinds of low temperature solution-processed technologies（Ta ≤ 300℃）,i.e.,water-based（DIW-based） process and alkoxide-based（2-ME-based）process.The thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures.Thermal annealing at higher temperature leads to an increase in the saturation mobility（μsat） and a negative shift in the threshold voltage（VTH）.The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance,and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm^2/V·s comparable to that of a-Si：H TFTs,whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm^2/Vs and one annealed at 200℃ is inactive.The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature.The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.

聚碳酸酯气体辅助注射成型制品内应力分布及改善工艺

聚碳酸酯(PC)注塑制品出模后在无外加约束条件下内部应力得不到松弛释放,易导致制品产生开裂,严重影响制品的服役性能。为探究PC制品内应力分布规律,找到有效降低内应力的工艺措施,基于气体辅助注射成型(GAIM)工艺和自行设计制造的带有半圆形加强筋的平板试验模具,结合光弹法和溶剂检测法,研究GAIM制品内应力的分布特点,讨论注气压力和气体保压压力两种工艺参数对GAIM制品内应力的影响规律,提出两种改善制品内应力的工艺方法。研究发现:通过光弹法观测到的应力条纹分布与溶剂浸泡后的裂纹开裂区域一致,即GAIM制品末端及边缘处内应力较大,沿气道两侧应力分布较均匀;较高的注气压力和较低的气体保压压力可以更加有效减小GAIM制品的内应力;通过对GAIM制品24 h即时退火和延长二次注气的卸压时间可以有效降低制品内应力。

碳化硅晶片减薄工艺对表面损伤的影响

随着碳化硅功率器件和芯片技术的快速发展,对碳化硅物理强度、散热性及尺寸要求越来越高,因而,对碳化硅晶片的减薄处理逐渐成为晶圆加工的重要课题。由于碳化硅材料断裂韧性较低,在减薄加工过程中易开裂,碳化硅晶片的高效率、高质量加工成为急需突破的瓶颈。本文基于碳化硅晶片的磨削减薄工艺技术,从加工过程及基础原理出发,通过研究磨削减薄工艺中四个主要参数(砂轮粒度、砂轮进给率、砂轮转速和工作台转速)对晶片表面的损伤,如崩边和磨痕的影响,提出前退火减薄工艺,以提高晶片加工质量,降低晶片表面损伤。本研究工作揭示了晶片减薄工艺技术调控表面质量的方法,并在实验加工过程中验证成功,相关研究结果对加工难度大的硬脆材料晶片减薄技术具有重要的指导意义。

基于磁控溅射和电子束蒸发合成Mn-Co-Ni-O薄膜

锰钴镍氧(Mn-Co-Ni-O,MCNO)薄膜因为具有优异的负温度系数特性在近年来受到广泛关注,现采用射频磁控溅射和电子束蒸发相结合的方式,在单抛蓝宝石(Al2O3)衬底上制备MCNO薄膜,并采用一系列表征探讨了后道退火(Post Annealing,PA)温度对所制薄膜的微观结构和光学性质的影响。结果表明,随着PA温度的提高,MCNO膜的晶粒尺寸和间隔均呈现增大趋势。X射线光电子能谱结果表明,Mn3+/Mn4+的比例随着温度的升高而增大。电学和光学特性研究表明,在PA温度为850℃,条件为空气退火1 h得到的MCNO薄膜在温度范围为220~300 K范围内符合VRH模型,TCR系数良好,激活能为0.32 eV,薄膜在红外可见波段具有较高吸收率。

SPS烧结Ni-Mn-In合金的马氏体相变和力学性能研究

本工作利用放电等离子烧结技术制备了Ni_(45)Co_(5)Mn_(37)In_(13)合金,通过优化热处理工艺以及烧结工艺参数尽可能地消除阻碍马氏体相变的内应力等因素。结果表明,合金粉末经过773 K低温去应力退火,有利于获得6M马氏体结构,6M马氏体结构的存在有利于相变的进行,这主要归因于原子结构有序化、均匀化增强。而退火时间从2 h延长到25 h,合金粉末的马氏体相变行为没有明显的变化,这归因于退火时间对原子扩散以及位错运动的影响较小。随着烧结温度从873 K升高到1173 K,烧结合金的抗压强度和断裂应变分别提高到1564 MPa和13.4%,这归因于孔隙的减小、致密度的提高以及晶界强化。总之,通过两次低温去应力退火和一次高温烧结,烧结Ni_(45)Co_(5)Mn_(37)In_(13)合金不仅获得了良好的力学性能,还具有急剧的马氏体相变行为。

基于SLM钛合金方向舵退火工艺仿真分析与优化

以SLM方法制备的钛合金方向舵为研究对象,采用固有应变法对其进行残余应力和变形分析,提出基于体单元仿真模型的退火工艺,并对其进行有限元仿真分析及工艺参数优化。结果表明:SLM方法制备的钛合金方向舵残余应力和变形量均较大,通过全交实验进行工艺参数优化后,方向舵的残余应力从1 206.96 MPa下降到143.86 MPa,变形量从8.63 mm减小到2.08 mm。

退火工艺对电池壳用钢XDCK第二相粒子影响的研究

为了研究退火工艺对电池壳用钢XDCK第二相粒子的影响,在连续退火条件下对XDCK进行模拟试验和工业试验。采用连续退火模拟试验机模拟连续退火生产工艺,对不同退火温度和退火保温时间试样中第二相粒子的尺寸、数量和分布情况进行研究。结果表明电池壳用钢XDCK中第二相粒子为TiC,随着退火温度的升高和保温时间的延长,第二相粒子尺寸逐渐增大。

连续碳纤维增强尼龙复合材料的3D打印研究

连续碳纤维增强复合材料具有高强度、刚性、耐磨、耐高温和轻量化等优点,适用于需要高性能且轻量化的领域。将三维(3D)打印技术用于制备连续碳纤维增强复合材料则具有更高效、低成本、高材料利用率和灵活生产等优势。本文开展了连续碳纤维增强尼龙复合材料的3D打印研究,研究了挤出宽度、层厚、打印温度对打印材料拉伸性能以及弯曲性能的影响,并探究了退火后处理对材料力学性能的影响。使用扫描电子显微镜(SEM)观察了3D打印样品的切割横截面和拉伸断裂失效横截面,在不同工艺参数条件下,分析和讨论了打印样品和后处理打印样品的内部结构和力学性能之间的关系。结果表明,当挤出宽度为0.65 mm时打印样品力学性能最佳,拉伸强度和拉伸模量为501.51 MPa和31.70 GPa,弯曲强度和弯曲模量为164.53 MPa和31.91 GPa;当层厚为0.1 mm时打印样品力学性能最佳,拉伸强度和拉伸模量为520.78 MPa和36.59 GPa,弯曲强度和弯曲模量为168.43 MPa和32.31 GPa,之后力学性能随着层厚的增加而减小。打印温度对打印样品的力学影响较小。退火后处理对打印样品的力学性能具有一定的优化效果,拉伸强度提升效果有3.07%,弯曲强度提升了51.27%。

铸轧供坯3105铝合金板带再结晶温度工艺研究

本文主要以3105铝合金铸轧板为实验研究对象,通过试验研究了不同退火温度对冷轧变形量为20%~90%的不同厚度的3105铝合金板的组织和力学性能的影响,确定了该合金的再结晶退火温度,为该合金的退火工艺制度确定提供依据。以此生产出表面质量良好、性能稳定的建筑装饰用铸轧供坯3105铝合金带材,并实现批量工业化生产。

低Co长寿命储氢合金MlNi_(4.57)Co_(0.17)Mn_(0.25)Al_(0.41)Y_(0.02)退火工艺的研究

采用真空感应熔炼法制备低Co长寿命储氢合金MlNi_(4.57)Co_(0.17)Mn_(0.25)Al_(0.41)Y_(0.02),进行不同的退火温度(1040、1060、1080℃)和保温5、7、10 h的退火处理,研究了不同退火工艺对合金结构和电化学性能的影响。结果表明,退火有利于合金组分均匀,消除晶格应力;随着退火温度的升高和保温时间的增加,合金的吸放氢等温平衡压PCT逐渐升高,循环稳定性明显增强,合金的最大放电容量和高倍率放电性能有所下降,且退火温度对合金电化学性能的影响高于保温时间的影响。其中,经过1060℃、保温10 h退火的合金,其最大放电容量为332.8 mA·h/g,容量保持率80%的循环次数可达到349次,综合性能最优。

冷轧连退带钢力学性能不合格原因

采用金相检验、力学性能测试等方法,对某冷轧连退带钢屈服强度、抗拉强度、断后伸长率等力学性能指标不合格的原因进行分析。结果表明:当退火速率较慢时,明火段板带温度升高,当板带温度比珠光体开始奥氏体化温度高30℃时,组织中珠光体趋于球化转变,材料的强度明显降低;当退火速率较快时,明火段板带温度下降,当板带温度比珠光体开始奥氏体化温度低10℃时,晶粒再结晶或者晶粒长大不完全,造成材料强度偏高、断后伸长率偏小。

基于质量控制方法的电子驻车制动系统开关开裂的问题研究

电子驻车制动系统开关外壳一般通过注塑成型制得,是电子驻车制动系统的触发接口。针对某车型售后开关开裂问题,通过采用质量控制方法探究开关外壳开裂的原因,对各个末端因素进行了逐个确认,最终明确失效的直接原因是退火的工序执行不到位,并据此制定了改进策略,从而有效改善了开关外壳质量,为类似塑料制品开裂问题提供了参考。