Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The stru...Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.展开更多
Ta5+doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irr...Ta5+doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irradiation spectra, and PL decay profiles of the samples were measured at room temperature.The relevant results show that the optical transmittance of the samples annealed in the air or nitrogen gas was improved.By drawing the(ahv)2–hv graph,it can be seen that the band gap decreased after being annealed in the air, but increased in nitrogen gas.The PL spectra and x-ray irradiation spectra show that the luminescent intensity of the sample annealed in the air increased substantially,while decreased for the sample annealed in nitrogen.The PL decay time of the Ta:β-Ga2O3 annealed in the air increased significantly compared with that of the Ta:β-Ga2O3 sample without annealing, but the tendency after annealing in nitrogen gas was opposite.展开更多
Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Tr...Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO：In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃.展开更多
The effect of Y and Sb co-doping on the luminescence property of PbWO 4 crystals has been investigated. Compared with undoped PbWO4, the transmittance and emission peak intensity of Y∶Sb∶PbWO 4 crystals were obvious...The effect of Y and Sb co-doping on the luminescence property of PbWO 4 crystals has been investigated. Compared with undoped PbWO4, the transmittance and emission peak intensity of Y∶Sb∶PbWO 4 crystals were obviously improved. In addition, its transmittance cutoff wavelength and emission peak shifted to the shorter one. The mechanism of effect of Y and Sb on the transmittance spectra was briefly discussed. The light yield of Y∶Sb∶PbWO 4 crystals was 25p.e./MeV, which was two times of that of undoped PbWO 4. Our experiments showed that Y and Sb co-doping was a selectable method to improve the luminescence property of PbWO 4.展开更多
TiO2 nanotubes with diameters of 10 nm and lengths up to 600 nm were fabricated by directly using com-mercial TiO2 powders P25 as the precursors via sonica-tion-hydrothermal combination approach. TiO2 nanotubes were c...TiO2 nanotubes with diameters of 10 nm and lengths up to 600 nm were fabricated by directly using com-mercial TiO2 powders P25 as the precursors via sonica-tion-hydrothermal combination approach. TiO2 nanotubes were characterized by means of X-ray powder diffractometer (XRD), scanning electron microscope (SEM), selected area electron diffraction pattern (SAED) and transmission elec-tron microscope (TEM). The light scattering property of film electrodes modified with TiO2 nanotubes was studied and revealed that TiO2 nanotubes can be used as the light scat-tering centers to increase the light absorption in dye- sensi-tized solar cells. The TiO2 nanotubes film electrodes mixed with 10% small nanoparticles TiO2 had both strong light scattering property and fine mechanical characteristics, and this kind of electrodes can be used as electrodes in improving the conversion efficiencies of dye-sensitized solar cells.展开更多
TiO2 nanocrystalline porous films consisting of binary particles mixture (mean diameters of 12 and 100 nm) are capable of increasing the light absorption due to the possession of large specific surface area and light ...TiO2 nanocrystalline porous films consisting of binary particles mixture (mean diameters of 12 and 100 nm) are capable of increasing the light absorption due to the possession of large specific surface area and light scattering property. The simultaneous reduction of the film thickness leads to a decrease of the recombination loss during electron transport and an increase of the photocurrent efficiency.展开更多
基金the Program for New Century Excellent Talents in Universities, MOE, China (No. NCET-05-0764)the Tackle Key Problems on Scientific Technology Foundation of Chongqing Municipality (Nos. CSTC2005AA4006-A6 and CSTC2004AC4034)+2 种基金the Natural Science Foundation of Chongqing Municipality (No. CSTC2005BA4016)China Postdoctoral Science Foundation (No. 2005037544)the Inno-base for Graduates of Chongqing University (No. 200506Y1B0240131).
文摘Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
基金Project supported by the National Natural Science Foundation of China(Grant No.51802327)the Science and Technology Commission of Shanghai Municipality,China(Grant No.18511110500)
文摘Ta5+doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irradiation spectra, and PL decay profiles of the samples were measured at room temperature.The relevant results show that the optical transmittance of the samples annealed in the air or nitrogen gas was improved.By drawing the(ahv)2–hv graph,it can be seen that the band gap decreased after being annealed in the air, but increased in nitrogen gas.The PL spectra and x-ray irradiation spectra show that the luminescent intensity of the sample annealed in the air increased substantially,while decreased for the sample annealed in nitrogen.The PL decay time of the Ta:β-Ga2O3 annealed in the air increased significantly compared with that of the Ta:β-Ga2O3 sample without annealing, but the tendency after annealing in nitrogen gas was opposite.
基金supported by the National Natural Science Foundation of China (Grant Nos. 50942021 and 11075314)the Fundamental Research Fund for the Central Universities (Grant No. CDJXS10102207)
文摘Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO：In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃.
文摘The effect of Y and Sb co-doping on the luminescence property of PbWO 4 crystals has been investigated. Compared with undoped PbWO4, the transmittance and emission peak intensity of Y∶Sb∶PbWO 4 crystals were obviously improved. In addition, its transmittance cutoff wavelength and emission peak shifted to the shorter one. The mechanism of effect of Y and Sb on the transmittance spectra was briefly discussed. The light yield of Y∶Sb∶PbWO 4 crystals was 25p.e./MeV, which was two times of that of undoped PbWO 4. Our experiments showed that Y and Sb co-doping was a selectable method to improve the luminescence property of PbWO 4.
基金This work was supported by the Major State Basic Research Development Program(Grant No.G2000028205)the High-Tech Research and Development Program of China(Grant No.2002AA302403)+1 种基金the Knowledge Innovation Foundation of the Chinese Academy of Sciences(Grant No.KGCX2-303)the National Natural Science Foundation of China(Grant Nos.50221201 and 20373075).
文摘TiO2 nanotubes with diameters of 10 nm and lengths up to 600 nm were fabricated by directly using com-mercial TiO2 powders P25 as the precursors via sonica-tion-hydrothermal combination approach. TiO2 nanotubes were characterized by means of X-ray powder diffractometer (XRD), scanning electron microscope (SEM), selected area electron diffraction pattern (SAED) and transmission elec-tron microscope (TEM). The light scattering property of film electrodes modified with TiO2 nanotubes was studied and revealed that TiO2 nanotubes can be used as the light scat-tering centers to increase the light absorption in dye- sensi-tized solar cells. The TiO2 nanotubes film electrodes mixed with 10% small nanoparticles TiO2 had both strong light scattering property and fine mechanical characteristics, and this kind of electrodes can be used as electrodes in improving the conversion efficiencies of dye-sensitized solar cells.
基金supported by the National Research Fund for the Basic Key Project(Grant No.G2000028205)the Knowledge Innovation Foundation of the Chinese Academy of Sciences(Grant No.KGCX2-303-02).
文摘TiO2 nanocrystalline porous films consisting of binary particles mixture (mean diameters of 12 and 100 nm) are capable of increasing the light absorption due to the possession of large specific surface area and light scattering property. The simultaneous reduction of the film thickness leads to a decrease of the recombination loss during electron transport and an increase of the photocurrent efficiency.
