Anomalous Hall effect and electronic correlation in a spin-reoriented kagome antiferromagnet LuFe_(6)Sn_(6)

The kagome lattice system has been identified as a fertile ground for the emergence of a number of new quantumstates,including superconductivity,quantum spin liquids,and topological electronic states.This has attracted significantinterest within the field of condensed matter physics.Here,we present the observation of an anomalous Hall effect in aniron-based kagome antiferromagnet LuFe_(6)Sn_(6),which implies a non-zero Berry curvature in this compound.By means ofextensive magnetic measurements,a high Neel temperature,T_(N)=552 K,and a spin reorientation behavior were identifiedand a simple temperature-field phase diagram was constructed.Furthermore,this compound was found to exhibit a largeSommerfeld coefficient ofγ=87 mJ·mol^(-1)·K^(-2),suggesting the presence of a strong electronic correlation effect.Ourresearch indicates that LuFe_(6)Sn_(6)is an intriguing compound that may exhibit magnetism,strong correlation,and topologicalstates.

Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI_(2) van der Waals heterostructure

Valley-polarized quantum anomalous Hall effect(VQAHE), combined nontrivial band topology with valleytronics,is of importance for both fundamental sciences and emerging applications. However, the experimental realization of this property is challenging. Here, by using first-principles calculations and modal analysis, we predict a mechanism of producing VQAHE in two-dimensional ferromagnetic van der Waals germanene/MnI_(2) heterostructure. This heterostructure exhibits both valley anomalous Hall effect and VQAHE due to the joint effects of magnetic exchange effect and spin–orbital coupling with the aid of anomalous Hall conductance and chiral edge state. Moreover interestingly, through the electrical modulation of ferroelectric polarization state in In_(2)Se_(3), the germanene/Mn I_(2)/In_(2)Se_(3) heterostructure can undergo reversible switching from a semiconductor to a metallic behavior. This work offers a guiding advancement for searching for VQAHE in ferromagnetic van der Waals heterostructures and exploiting energy-efficient devices based on the VQAHE.

Enhanced anomalous Hall effect in kagome magnet YbMn_(6)Sn_(6)with intermediate-valence ytterbium

We report on the magnetization and anomalous Hall effect(AHE)in the high-quality single crystals of the kagome magnet YbMn_(6)Sn_(6),where the spins of the Mn atoms in the kagome lattice order ferromagnetically and the intermediate-valence Yb atoms are nonmagnetic.The intrinsic mechanism plays a crucial role in the AHE,leading to an enhanced anomalous Hall conductivity(AHC)compared with the other rare-earth RMn_(6)Sn_(6)compounds.Our band structure calculation reveals a strong hybridization between the 4f electrons of Yb and conduction electrons.

Evolution of anomalous Hall effect in ferromagnetic Weyl semimetal Nb_(x)Zr_(1-x)Co_(2)Sn

Magnetic topological semimetal can host various topological non-trivial states leading to exotic novel transport properties.Here we report the systematic magneto-transport studies on the Heusler alloy Nb_(x)Zr_(1-x)Co_(2)Sn considered as a ferromagnetic(FM)Weyl semimetal.The cusp anomaly of temperature-dependent resistivity and large isotropic negative magneto-resistivity(MR)emerge around the FM transition consistent with the theoretical half-metallic predictions.The prominent anomalous Hall effect(AHE)has the same behavior with the applied field along various crystal directions.The Nb doping introduces more disorder resulting in the enhancement of the upturn for the temperature-dependent resistivity in low temperatures.With Nb doping,the AHE exhibits systemic evolution with the Fermi level lifted.At the doping level of x=0.25,the AHE mainly originates from the intrinsic contribution related to non-trivial topological Weyl states.

Tailoring-compensated ferrimagnetic state and anomalous Hall effect in quaternary Mn–Ru–V–Ga Heusler compounds

Cubic Mn_(2)Ru_(x)Ga Heusler compound is a typical example of compensated ferrimagnet with attractive potential for high-density,ultrafast,and low-power spintronic applications.In the form of epitaxial thin films,Mn_(2)Ru_(x)Ga exhibits high spin polarization and high tunability of compensation temperature by freely changing the Ru content x in a broad range(0.3<x<1.0).Herein Mn-Ru-Ga-based polycrystalline bulk buttons prepared by arc melting are systematically studied and it is found that in equilibrium bulk form,the cubic structure is unstable when x<0.75.To overcome this limitation,Mn-Ru-Ga is alloyed with a fourth element V.By adjusting the content of V in the By adjusting the content of V in the Mn_(2)Ru_(0.75)V_(y)Ga and Mn_(2.25-y)Ru_(0.75)V_(y)Ga quaternary systems the magnetic compensation temperature is tuned.Compensation is achieved near 300 K which is confirmed by both the magnetic measurement and anomalous Hall effect measurement.The analyses of the anomalous Hall effect scaling in quaternary Mn-Ru-V-Ga alloy reveal the dominant role of skew scattering,notably that contributed caused by the thermally excited phonons,in contrast to the dominant intrinsic mechanism found in many other 3d ferromagnets and Heusler compounds.It is further shown that the Ga antisites and V content can simultaneously control the residual resistivity ratio(RRR)as well as the relative contribution of phonon and defect to the anomalous Hall effect a"/a0'in Mn-Ru-V-Ga,resulting in a scaling relation a"/a0'∝RRR^(1.8).

Spin direction dependent quantum anomalous Hall effect in two-dimensional ferromagnetic materials

We propose a scheme for realizing the spin direction-dependent quantum anomalous Hall effect(QAHE)driven by spin-orbit couplings(SOC)in two-dimensional(2D)materials.Based on the sp^(3)tight-binding(TB)model,we find that these systems can exhibit a QAHE with out-of-plane and in-plane magnetization for the weak and strong SOC,respectively,in which the mechanism of quantum transition is mainly driven by the band inversion of p_(x,y)/p_(z)orbitals.As a concrete example,based on first-principles calculations,we realize a real material of monolayer 1T-SnN_(2)/PbN_(2)exhibiting the QAHE with in-plane/out-of-plane magnetization characterized by the nonzero Chern number C and topological edge states.These findings provide useful guidance for the pursuit of a spin direction-dependent QAHE and hence stimulate immediate experimental interest.

Anomalous valley Hall effect in two-dimensional valleytronic materials

The anomalous valley Hall effect(AVHE)can be used to explore and utilize valley degrees of freedom in materials,which has potential applications in fields such as information storage,quantum computing and optoelectronics.AVHE exists in two-dimensional(2D)materials possessing valley polarization(VP),and such 2D materials usually belong to the hexagonal honeycomb lattice.Therefore,it is necessary to achieve valleytronic materials with VP that are more readily to be synthesized and applicated experimentally.In this topical review,we introduce recent developments on realizing VP as well as AVHE through different methods,i.e.,doping transition metal atoms,building ferrovalley heterostructures and searching for ferrovalley materials.Moreover,2D ferrovalley systems under external modulation are also discussed.2D valleytronic materials with AVHE demonstrate excellent performance and potential applications,which offer the possibility of realizing novel low-energy-consuming devices,facilitating further development of device technology,realizing miniaturization and enhancing functionality of them.

Anomalous spin Josephson effect in spin superconductors

The spin superconductor state is the spin-polarized triplet exciton condensate,which can be viewed as a counterpart of the charge superconductor state.As an analogy of the charge Josephson effect,the spin Josephson effect can be generated in the spin superconductor/normal metal/spin superconductor junctions.Here we study the spin supercurrent in the Josephson junctions consisting of two spin superconductors with noncollinear spin polarizations.For the Josephson junctions with out-of-plane spin polarizations,the possibleπ-state spin supercurrent appears due to the Fermi momentum-splitting Andreev-like reflections at the normal metal/spin superconductor interfaces.For the Josephson junctions with in-plane spin polarizations,the anomalous spin supercurrent appears and is driven by the misorientation angle of the in-plane polarizations.The symmetry analysis shows that the appearance of the anomalous spin Josephson current is possible when the combined symmetry of the spin rotation and the time reversal is broken.

Room-temperature anomalous Hall effect and magnetroresistance in(Ga,Co)-codoped ZnO diluted magnetic semiconductor films

This paper reports that the （Ga, Co）-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co2＋ and Ga3＋ ions substitute for Zn2＋ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic （Ga, Co）-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room tempera- ture. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

Ferromagnetism,variable range hopping,and the anomalous Hall effect in epitaxial Co:ZnO thin film

A series of high quality single crystalline epitaxial Zn 0.95 Co 0.05 O thin films is prepared by molecular beam epitaxy.Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10 18 cm 3-10 20 cm 3 by changing the oxygen partial pressure during film growth.The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature.The ferromagnetism can be maintained up to room temperature.However,the anomalous Hall effect is observed only at low temperature and disappears above 160 K.This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.

Quantum anomalous Hall effect in twisted bilayer graphene quasicrystal

The nontrivial topology is investigated in a dodecagonal quasicrystal made of 30° twisted bilayer graphene (TBG). Based on tight-binding model with both exchange field and Rashba spin–orbit coupling, the topological index, chiral edge states, and quantum conductance are calculated to distinguish its unique topological phase. A high Bott index (B = 4) quantum anomalous Hall effect (QAHE) is identified in TBG quasicrystal, which is robust to a finite perturbation without closing the nontrivial gap. Most remarkably, we have found that the multiple Dirac cone replicas in TBG quasicrystal are only a spectra feature without generating extra chiral edge states. Our results not only propose a possible way to realize the QAHE in quasicrystal, but also identify the continuity of nontrivial topology in TBG between crystal and quasicrystal.

Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic,extrinsic,and external electric-field induced spin-orbit couplings

The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling were investigated theoretically. Based on a unified semiclassical theoretical approach, it is shown that the total anomalous Hall conductivity can be expressed as the sum of three distinct contributions in the presence of these competing spin-orbit interactions, namely an intrinsic contribution determined by the Berry curvature in the momentum space, an extrinsic contribution determined by the modified Bloch band group velocity and an extrinsic contribution determined by spin-orbit-dependent impurity scattering. The characteristics of these competing contributions are discussed in detail in the paper.

Single-layer intrinsic 2H-phase LuX_(2)(X=Cl,Br,I)with large valley polarization and anomalous valley Hall effect

Manipulation of the valley degree of freedom provides a new path for quantum information technology,but the real intrinsic large valley-polarization materials are rarely reported up to date.Here,we perform first-principles calculations to predict a class of 2H-phase single layer(SL)materials LuX_(2)(X=Cl,Br,I)to be ideal candidates.SL-Lu X_(2)are ferrovalley materials with a giant valley-polarization of 55 meV–148 meV as a result of its large spin–orbital coupling(SOC)and intrinsic ferromagnetism(FM).The magnetic transition temperatures of SL-LuI_(2)and SL-LuCl2are estimated to be 89 K–124 K,with a sizable magnetic anisotropy at out-of-plane direction.Remarkably,the anomalous valley Hall effect(AVHE)can be controlled in SL-LuX_(2)when an external electric field is applied.Moreover,the intrinsic valleypolarization of SL-LuI_(2)is highly robust for biaxial strain.These findings provide a promising ferrovalley material system for the experimentation of valleytronics and subsequent applications.

Anomalous Direct-Current Josephson Effect in Semiconductor Nanowire Junctions

We investigate the dc Josephson effect in one-dimensional junctions where a ring conductor is sandwiched between two semiconductor nanowires with proximity-induced superconductivity. Peculiar features of the Josephson effect arise due to the interplay of spin-orbit interaction and external Zeenmn field. By tuning the Zeeman field orientation, the device can vary from 0 to π junction. Afore importantly, nonzero ,losephson current is possible at zero phase difference across the junction. Although this anomalous Josephson current is not relevant to the topological phase transition, its magnitude can be significantly enhanced whe, n the nanowire, s become topological superconductors where Majorana bound states emerge. Distinct modulation patterns are obtained for the semiconductor nanowires in the topologically trivial and non-trivial phases. These results are useful to probe the topological phase transition in semiconductor nanowire junctions via the dc Josephson effect.

Current carrying states in the disordered quantum anomalous Hall effect

In a quantum Hall effect,flat Landau levels may be broadened by disorder.However,it has been found that in the thermodynamic limit,all extended(or current carrying)states shrink to one single energy value within each Landau level.On the other hand,a quantum anomalous Hall effect consists of dispersive bands with finite widths.We numerically investigate the picture of current carrying states in this case.With size scaling,the spectrum width of these states in each bulk band still shrinks to a single energy value in the thermodynamic limit,in a power law way.The magnitude of the scaling exponent at the intermediate disorder is close to that in the quantum Hall effects.The number of current carrying states obeys similar scaling rules,so that the density of states of current carrying states is finite.Other states in the bulk band are localized and may contribute to the formation of a topological Anderson insulator.

Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures

We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed.By applying positive electric field or negative electric field,the intersecting hump-like feature is suppressed or enhanced,respectively.The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field.The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO_(3).The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO_(3)heterostructures.

Anomalous Hall effect in ferromagnetic LaCo_(2)As_(2) and ferrimagnetic NdCo_(2)As_(2)

We conducted a comparative study of the magnetic and transport properties of single-crystalline LaCo_(2)As_(2) and NdCo_(2)As_(2).LaCo_(2)As_(2) is a soft metallic ferromagnet which exhibits purely intrinsic anomalous Hall effect(AHE) due to Co-3d electrons. With Nd-4f electronic magnetism, ferrimagnetic NdCo_(2)As_(2) manifests pronounced sign reversal and multiple hysteresis loops in temperature-and field-dependent magnetization, Hall resistivity, and magnetoresistance, due to complicated magnetic structural changes. We reveal that the AHE for NdCo_(2)As_(2) is stemming from the Co sub-lattice and deduce its phase diagram which includes magnetic compensation and two meta-magnetic phase transitions. The sensitivity of the Hall effect on the details of the magnetic structures in ferrimagnetic NdCo_(2)As_(2) provides a unique opportunity to explore the magnetic interaction between 4f and 3d electrons and its impact on the electronic structure.

From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect （QHE）, as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators （TIs） with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall （QAH） effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped （Bi,Sb）2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.

Anomalous Josephson effect between d-wave superconductors through a two-dimensional electron gas with both Rashba spin-orbit coupling and Zeeman splitting

Based on the Bogoliubov-de Gennes equation and the extended McMillan’s Green’s function formalism,we study theoretically the Josephson effect between two d-wave superconductors bridged by a ballistic two-dimensional electron gas with both Rashba spin-orbit coupling and Zeeman splitting.We show that due to the interplay of Rashba spin-orbit coupling and Zeeman splitting and d-wave pairing,the current-phase relation in such a heterostructure may exhibit a series of novel features and can change significantly as some relevant parameters are tuned.In particular,anomalous Josephson current may occur at zero phase bias under various different situations if both time reversal symmetry and inversion symmetry of the system are simultaneously broken,which can be realized by tuning some relevant parameters of the system,including the relative orientations and the strengths of the Zeeman field and the spin-orbit field in the bridge region,the relative orientations of the a axes in two superconductor leads,or the relative orientations between the Zeeman field in the bridge region and the a axes in the superconductor leads.We show that both the magnitude and the direction of the anomalous Josephson current may depend sensitively on these relevant parameters.

Anomalous Hall effect in ferromagnetic Weyl semimetal candidate Zr1-x VxCo1.6Sn

We grew single crystals of vanadium-substituted,ferromagnetic Weyl semimetal candidate Zr1-xVxCo1.6Sn from molten tin flux.These solid solutions all crystallize in a full Heusler structure(L21)while their Curie temperatures and magnetic moments are enhanced by V-substitution.Their resistivity gradually changes from bad-metal-like to semiconductor-like with increasing x while the anomalous Hall effect(AHE),which can be well fitted by Tian-Ye-Jin(TYJ)scaling,[1]is also enhanced.Moreover,we find an apparent electron-electron interaction(EEI)induced quantum correction in resistivity at low temperature.The anomalous Hall conductivity(AHC)dominated by the intrinsic term is not corrected.