Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using h...Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the device.This revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.展开更多
The global error minimization is a variational method for obtaining approximate analytical solutions to nonlinear oscillator equations which works as follows. Given an ordinary differential equation, a trial solution ...The global error minimization is a variational method for obtaining approximate analytical solutions to nonlinear oscillator equations which works as follows. Given an ordinary differential equation, a trial solution containing unknowns is selected. The method then converts the problem to an equivalent minimization problem by averaging the squared residual of the differential equation for the selected trial solution. Clearly, the method fails if the integral which defines the average is undefined or infinite for the selected trial. This is precisely the case for such non-periodic solutions as heteroclinic (front or kink) and some homoclinic (dark-solitons) solutions. Based on the fact that these types of solutions have vanishing velocity at infinity, we propose to remedy to this shortcoming of the method by averaging the product of the residual and the derivative of the trial solution. In this way, the method can apply for the approximation of all relevant type of solutions of nonlinear evolution equations. The approach is simple, straightforward and accurate as its original formulation. Its effectiveness is demonstrated using a Helmholtz-Duffing oscillator.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11690041,11805244,and 11675233)the Opening Project of Science and Technology on Reliability Physics and Application Technology of the Electronic Component Laboratory(No.ZHD 201604)
文摘Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the device.This revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.
文摘The global error minimization is a variational method for obtaining approximate analytical solutions to nonlinear oscillator equations which works as follows. Given an ordinary differential equation, a trial solution containing unknowns is selected. The method then converts the problem to an equivalent minimization problem by averaging the squared residual of the differential equation for the selected trial solution. Clearly, the method fails if the integral which defines the average is undefined or infinite for the selected trial. This is precisely the case for such non-periodic solutions as heteroclinic (front or kink) and some homoclinic (dark-solitons) solutions. Based on the fact that these types of solutions have vanishing velocity at infinity, we propose to remedy to this shortcoming of the method by averaging the product of the residual and the derivative of the trial solution. In this way, the method can apply for the approximation of all relevant type of solutions of nonlinear evolution equations. The approach is simple, straightforward and accurate as its original formulation. Its effectiveness is demonstrated using a Helmholtz-Duffing oscillator.
