Radio frequency identification(RFID) is a ubiquitous identification technology nowadays. An on-chip high-performance transmit/receive(T/R) switch is designed and simulated in 0.13-μm CMOS technology for reader-less R...Radio frequency identification(RFID) is a ubiquitous identification technology nowadays. An on-chip high-performance transmit/receive(T/R) switch is designed and simulated in 0.13-μm CMOS technology for reader-less RFID tag. The switch utilizes only the transistor width and length(W/L) optimization, proper gate bias resistor and resistive body floating technique and therefore,exhibits 1 d B insertion loss, 31.5 d B isolation and 29.2 d Bm 1-d B compression point(P1d B). Moreover, the switch dissipates only786.7 n W power for 1.8/0 V control voltages and is capable of switching in 794 fs. Above all, as there is no inductor or capacitor used in the circuit, the size of the switch is 0.00208 mm2 only. This switch will be appropriate for reader-less RFID tag transceiver front-end as well as other wireless transceivers operated at 2.4 GHz band.展开更多
Grinding-induced tm phase transformation and the resultant texture in ceria-yttria-doped tetragonal zirconia polycrystals with varied tetragonality have been studied by XRD. It is observed that the reversible tm phase...Grinding-induced tm phase transformation and the resultant texture in ceria-yttria-doped tetragonal zirconia polycrystals with varied tetragonality have been studied by XRD. It is observed that the reversible tm phase transformation occurs during grinding and the intensity ratio of I(002)t/I(200)t increases with the transformability. The author proposes that the texture induced by grinding at low temperatures is due to the tetragonal variant reorientation via cyclic,reversible tm phase transformation, termed 'transformational domain switching', instead of the ferroelastic one展开更多
To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically....To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.展开更多
In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T D...In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.展开更多
With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good perf...With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO systems, it a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured opti-cally. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).展开更多
In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxi...In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semicon- ductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.展开更多
基金supported by the research grant Economic Transformation Programme (ETP-2013-037) from Universiti Kebangsaan Malaysia and the Ministry of Science, Technology and Innovation (MOSTI) respectively
文摘Radio frequency identification(RFID) is a ubiquitous identification technology nowadays. An on-chip high-performance transmit/receive(T/R) switch is designed and simulated in 0.13-μm CMOS technology for reader-less RFID tag. The switch utilizes only the transistor width and length(W/L) optimization, proper gate bias resistor and resistive body floating technique and therefore,exhibits 1 d B insertion loss, 31.5 d B isolation and 29.2 d Bm 1-d B compression point(P1d B). Moreover, the switch dissipates only786.7 n W power for 1.8/0 V control voltages and is capable of switching in 794 fs. Above all, as there is no inductor or capacitor used in the circuit, the size of the switch is 0.00208 mm2 only. This switch will be appropriate for reader-less RFID tag transceiver front-end as well as other wireless transceivers operated at 2.4 GHz band.
文摘Grinding-induced tm phase transformation and the resultant texture in ceria-yttria-doped tetragonal zirconia polycrystals with varied tetragonality have been studied by XRD. It is observed that the reversible tm phase transformation occurs during grinding and the intensity ratio of I(002)t/I(200)t increases with the transformability. The author proposes that the texture induced by grinding at low temperatures is due to the tetragonal variant reorientation via cyclic,reversible tm phase transformation, termed 'transformational domain switching', instead of the ferroelastic one
文摘To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.
文摘In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.
文摘With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO systems, it a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured opti-cally. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).
文摘In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semicon- ductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.
