The NaNbO_(3) antiferroelectrics have been considered as a potential candidate for dielectric capacitorsapplications. However, the high-electric-field-unstable antiferroelectric phase resulted in low energystorage den...The NaNbO_(3) antiferroelectrics have been considered as a potential candidate for dielectric capacitorsapplications. However, the high-electric-field-unstable antiferroelectric phase resulted in low energystorage density and efficiency. Herein, good energy storage properties were realized in (1-x)NaNbO_(3)- xNaTaO_(3) ceramics, by building a new phase boundary. As a result, a high recoverable energy density(Wrec) of 2.2 J/cm3 and efficiency (h) of 80.1% were achieved in 0.50NaNbO_(3)-0.50NaTaO_(3) ceramic at300 kV/cm. The excellent energy storage performance originates from an antiferroelectric-paraelectricphase boundary with simultaneously high polarization and low hysteresis, by tailoring the ratio ofantiferroelectric and paraelectric phases. Moreover, the 0.50NaNbO_(3)-0.50NaTaO_(3) ceramic also exhibitedgood temperature and frequency stability, together with excellent charge-discharge performance. Theresults pave a good way of designing new NaNbO_(3)-based antiferroelectrics with good energy storageperformance.展开更多
As a close relative of ferroelectricity,antiferroelectricity has received a recent resurgence of interest driven by technological aspirations in energy-efficient applications,such as energy storage capacitors,solid-st...As a close relative of ferroelectricity,antiferroelectricity has received a recent resurgence of interest driven by technological aspirations in energy-efficient applications,such as energy storage capacitors,solid-state cooling devices,explosive energy conversion,and displacement transducers.Though prolonged efforts in this area have led to certain progress and the discovery of more than 100 antiferroelectric materials over the last 70 years,some scientific and technological issues remain unresolved.Herein,we provide perspectives on the development of antiferroelectrics for energy storage and conversion applications,as well as a comprehensive understanding of the structural origin of antiferroelectricity and field-induced phase transitions,followed by design strategies for new lead-free antiferroelectrics.We also envision unprecedented challenges in the development of promising antiferroelectric materials that bridge materials design and real applications.Future research in these directions will open up new possibilities in resolving the mystery of antiferroelectricity,provide opportunities for comprehending structure-property correlation and developing antiferroelectric/ferroelectric theories,and suggest an approach to the manipulation of phase transitions for real-world applications.展开更多
The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood.In this work,by using the phase field simulation,we have studied the polarization switching proper...The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood.In this work,by using the phase field simulation,we have studied the polarization switching property of antiferroelectric domains.Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains,and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops.Moreover,we introduce charge defects into the sample and numerically investigate their influence.It is also shown that charge defects can induce local ferroelectric domains,which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop.Our results give insights into understanding the antiferroelectric phase transformation and optimizing the energy storage property in experiments.展开更多
Antiferroelectric ferroelectric (AFE-FE) phase transition in ceramic Pbo.97Lao.02(Zro.75Snon36Tion14)O3 (PLZST) was studied by dielectric spectroscopy as functions of frequency (102-105 Hz) and pressure (0-50...Antiferroelectric ferroelectric (AFE-FE) phase transition in ceramic Pbo.97Lao.02(Zro.75Snon36Tion14)O3 (PLZST) was studied by dielectric spectroscopy as functions of frequency (102-105 Hz) and pressure (0-500 MPa) under a DC electric field. The hydrostatic pressure-dependent remnant polarization and dielectric constant were mea- sured. The results show that remnant polarization of the metastable rhombohedral ferroelectric PLZST poled ceramic decreases sharply and depoles completely at phase transition under hydrostatic pressure. The dielectric constant um dergoes an abrupt jump twice during a load and unload cycle under an electric field. The two abrupt jumps correspond to two phase transitions, FE AFE and AFE-FE.展开更多
Free-standing antiferroelectric Pb(Zr0.95Ti0.05O3(PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition.X-ray diffraction patterns indicate that free-standing PZT(95/5) fil...Free-standing antiferroelectric Pb(Zr0.95Ti0.05O3(PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition.X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an α-axis preferred orientation.The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm,but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film.The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm^3 and 54.5%,respectively.In contrast,after removing the substrate,the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm^3 and 67.9%,respectively.展开更多
This paper investigates the pyroelectric of poled antiferroelectric (AFE) ceramic Pbo.97Lao.02 (Zro.69Sno.196 Ti0.114)03 and its remnant polarization dependence of hydrostatic pressure. The results show that the b...This paper investigates the pyroelectric of poled antiferroelectric (AFE) ceramic Pbo.97Lao.02 (Zro.69Sno.196 Ti0.114)03 and its remnant polarization dependence of hydrostatic pressure. The results show that the bound charges of poled sample can be released in short time by temperature field or pressure field. The released charge abruptly forms a large pulse current. The phenomena of released charge under external fields result in the ferroelectric-AFE phase transition induced by temperature or hydrostatic pressure.展开更多
A new type of large\|displacement actuator called RAINBOW (Reduced And Internally Biased Oxide Wafer) was fabricated by a chemical reduction of PSZT antiferroelectric ceramic. It is found that PSZT was easily reduced ...A new type of large\|displacement actuator called RAINBOW (Reduced And Internally Biased Oxide Wafer) was fabricated by a chemical reduction of PSZT antiferroelectric ceramic. It is found that PSZT was easily reduced and the optimal conditions for producing RAINBOW samples were determined to be 870℃ for 2~3 h. The AFE\|FE phase transitions occur at lower field strength in RAINBOWs compared with normal PSZT. Larger axial displacement (about 190μm) was obtained from the RAINBOWs by application of electric ...展开更多
The phase transitions, dielectric properties, and polarization versus electric field (P-E) hysteresis loops of Pbo.97Lao.02(Zr0.42Sn0.58-xTix)O3 (0.13≤ x ≤0.18) (PLZST) bulk ceramics were systematically inve...The phase transitions, dielectric properties, and polarization versus electric field (P-E) hysteresis loops of Pbo.97Lao.02(Zr0.42Sn0.58-xTix)O3 (0.13≤ x ≤0.18) (PLZST) bulk ceramics were systematically investigated. This study exhibited a sequence of phase transitions by analyzing the change of the P-E hysteresis loops with increasing temperature. The anfiferroelectric (AFE) to ferroelectric (FE) phase boundary of PLZST with the Zr content of 0.42 was found to locate at the Ti content between 0.14 and 0.15. This work is aimed to improve the ternary phase diagram of lanthanum-doped PZST with the Zr content of 0.42 and will be a good reference for seeking high energy storage density in the PLZST system with low-Zr content.展开更多
The crystal and electronic structure of antiferroelectric squaric acid is studied using density functional theory method, and the exchange correlation effects are treated by the generalized approximation. In order to ...The crystal and electronic structure of antiferroelectric squaric acid is studied using density functional theory method, and the exchange correlation effects are treated by the generalized approximation. In order to understand the ferroelectricity of H2SQ in the molecular plane and the antiferroelectricity in whole crystal, the density of states, charge density distribution and band structure are calculated. The result showed that O2p and C2p play important roles in the interactions between layers. The hybridizations of 02s-Hls and 02p-Hls are responsible for the tendency to ferroelectricity within each layer.展开更多
Pb0.97La0.02Zr0.95Ti0.05O3(PLZT)antiferroelectric thick films derived from different precursor solution concentrations are prepared on platinized silicon substrates by sol-gel processing.The films present polycrystall...Pb0.97La0.02Zr0.95Ti0.05O3(PLZT)antiferroelectric thick films derived from different precursor solution concentrations are prepared on platinized silicon substrates by sol-gel processing.The films present polycrystalline perovskite structure with a(100)preferred orientation by X-ray diffraction(XRD)analysis.The antiferroelectricity of the films is confirmed by the double hysteresis behaviors of polarization and double-bufferfly response of dielectric constant under the applied electrical field.Antiferroelectric properties and dielectric constant are improved while the polarization characteristic values are reduced with the increase of precursor solution concentration.The films at higher precursor solution concentration exhibit excellent dielectric properties.展开更多
A new type of large-displacement actuator called reduced and internally biased oxide wafer (RAINBOW) is fabricated by chemical reduction of Pb(Sn, Zr, Ti)O3(PSZT) antiferroelectric ceramics and its properties ar...A new type of large-displacement actuator called reduced and internally biased oxide wafer (RAINBOW) is fabricated by chemical reduction of Pb(Sn, Zr, Ti)O3(PSZT) antiferroelectric ceramics and its properties are investigated. It is found that PSZT is easily reduced and the optimal conditions for producing RAINBOW samples are determined to be 870 ℃ for 2-3 h. The antiferroelectrics-ferroelectrics phase transitions occur at lower field strength in RAINBOW actuators compared with normal PSZT actuators. Large axial displacements are also obtained from the RAINBOW actuator by application of electric fields exceeding the phase switching level. However, the field-induced displacement of the RAINBOW actuator is dependent on the manner of applying load on the samples.展开更多
The complex dielectric constant of pure and cerium doped calcium-barium-niobate (CBN) was studied at frequencies 20 Hz ≤ f ≤ 1 MHz in the temperature range 300 K ≤ T ≤ 650 K and compared with the results for the w...The complex dielectric constant of pure and cerium doped calcium-barium-niobate (CBN) was studied at frequencies 20 Hz ≤ f ≤ 1 MHz in the temperature range 300 K ≤ T ≤ 650 K and compared with the results for the well known ferroelectric relaxor strontium-barium-niobate (SBN). By the analysis of the systematically taken temperature and frequency dependent measurements of the dielectric constant the phase transition characteristic of the investigated materials was evaluated. From the results it must be assumed that CBN shows a slightly diffuse phase transition without relaxor behavior. Doping with cerium yields a definitely different phase transition characteristic with some indications for a relaxor type ferroelectric material, which are common from SBN.展开更多
PbZrO_(3)-based antiferroelectric(AFE)ceramics are promising dielectrics for high-energy-density capacitors due to their reversible phase transitions during charge-discharge cycles.In this work,a new composition serie...PbZrO_(3)-based antiferroelectric(AFE)ceramics are promising dielectrics for high-energy-density capacitors due to their reversible phase transitions during charge-discharge cycles.In this work,a new composition series,[Pb_(0.93-x)La_(0.02)(Li_(1/2)Bi_(1/2))_(x)Sr_(0.04)][Zr_(0.57)Sn_(0.34)Ti_(0.09)]O_(3),with Li^(+)and Bi^(3+)substitution of Pb^(2+)at x=0,0.04,0.08,0.12,0.16 is investigated for the microstructure evolution,ferroelectric(FE)and dielectric properties.It is found that Li^(+) and Bi^(3+) substitution can significantly reduce the sintering temperature and simultaneously enhance the dielectric breakdown strength.An ultrahigh energy efficiency(94.0%)and a large energy density(3.22 J/cm^(3))are achieved in the composition of x=0.12 with a low sintering temperature(1075℃).展开更多
Relaxor ferroic dielectrics have garnered increasing attention in the past decade as promising materials for energy storage.Among them,relaxor antiferroelectrics(AFEs)and relaxor ferroelectrics(FEs)have shown great pr...Relaxor ferroic dielectrics have garnered increasing attention in the past decade as promising materials for energy storage.Among them,relaxor antiferroelectrics(AFEs)and relaxor ferroelectrics(FEs)have shown great promise in term of high energy storage density and efficiency,respectively.In this study,a unique phase transition from relaxor AFE to relaxor FE was achieved for the first time by introducing strong-ferroelectricity BaTiO_(3)into NaNbO_(3)-BiFeO_(3)system,leading to an evolution from AFE R hierarchical nanodomains to FE polar nanoregions.A novel medium state,consisting of relaxor AFE and relaxor FE,was identified in the crossover of 0.88NaNbO_(3)–0.07BiFeO_(3)–0.05BaTiO_(3)ceramic,exhibiting a distinctive core-shell grain structure due to the composition segregation.By harnessing the advantages of high energy storage density from relaxor AFE and large efficiency from relaxor FE,the ceramic showcased excellent overall energy storage properties.It achieved a substantial recoverable energy storage density W_(rec)~13.1 J/cm^(3)and an ultrahigh efficiencyη~88.9%.These remarkable values shattered the trade-off relationship typically observed in most dielectric capacitors between W_(rec)andη.The findings of this study provide valuable insights for the design of ceramic capacitors with enhanced performance,specifically targeting the development of next generation pulse power devices.展开更多
The electric field-induced irreversible domain wall motion results in a ferroelectric(FE) hysteresis. In antiferroelectrics(AFEs), the irreversible phase transition is the main reason for the hysteresis effects, which...The electric field-induced irreversible domain wall motion results in a ferroelectric(FE) hysteresis. In antiferroelectrics(AFEs), the irreversible phase transition is the main reason for the hysteresis effects, which plays an important role in energy storage performance. Compared to the well-demonstrated FE hysteresis,the structural mechanism of the hysteresis in AFE is not well understood. In this work, the underlying correlation between structure and the hysteresis effect is unveiled in Pb(Zr,Sn,Ti)O_(3) AFE system by using in-situ electrical biasing synchrotron X-ray diffraction. It is found that the AFE with a canting dipole configuration, which shows a continuous polarization rotation under the electric field, tends to have a small hysteresis effect. It presents a negligible phase transition, a small axis ratio, and electric field-induced lattice changing, small domain switching. All these features together lead to a slim hysteresis loop and a high energy storage efficiency. These results offer a deep insight into the structure-hysteresis relationship of AFEs and are helpful for the design of energy storage material.展开更多
A negative capacitance(NC)effect has been proposed as a critical pathway to overcome the‘Boltzmann tyranny’of electrons,achieve the steep slope operation of transistors and reduce the power dissipation of current se...A negative capacitance(NC)effect has been proposed as a critical pathway to overcome the‘Boltzmann tyranny’of electrons,achieve the steep slope operation of transistors and reduce the power dissipation of current semiconductor devices.In particular,the ferroic property in hafnium-based films with fluorite structure provides an opportunity for the application of the NC effect in electronic devices.However,to date,only a transient NC effect has been confirmed in hafnium-based ferroic materials,which is usually accompanied by hysteresis and is detrimental to low-power transistor operations.The stabilized NC effect enables hysteresis-free and low-power transistors but is difficult to observe and demonstrate in hafnium-based films.This difficulty is closely related to the polycrystalline and multi-phase structure of hafnium-based films fabricated by atomic layer deposition or chemical solution deposition.Here,we prepare epitaxial ferroelectric Hf_(0.5)Zr_(0.5)O_(2) and antiferroelectric ZrO_(2) films with single-phase structure and observe the capacitance enhancement effect of Hf_(0.5)Zr_(0.5)O_(2)/Al_(2)O_(3) and ZrO_(2)/Al_(2)O_(3) capacitors compared to that of the isolated Al_(2)O_(3) capacitor,verifying the stabilized NC effect.The capacitance of Hf_(0.5)Zr_(0.5)O_(2) and ZrO_(2) is evaluated as−17.41 and−27.64 pF,respectively.The observation of the stabilized NC effect in hafnium-based films sheds light on NC studies and paves the way for low-power transistors.展开更多
Due to its lead-free composition and a unique double polarization hysteresis loop with a large maximum polarization(Pmax)and a small remnant polarization(Pr),AgNbO_(3)-based antiferroelectrics(AFEs)have attracted exte...Due to its lead-free composition and a unique double polarization hysteresis loop with a large maximum polarization(Pmax)and a small remnant polarization(Pr),AgNbO_(3)-based antiferroelectrics(AFEs)have attracted extensive research interest for electric energy storage applications.However,a low dielectric breakdown field(Eb)limits an energy density and its further development.In this work,a highly efficient method was proposed to fabricate high-energy-density Ag(Nb,Ta)O_(3) capacitor films on Si substrates,using a two-step process combining radio frequency(RF)-magnetron sputtering at 450℃and post-deposition rapid thermal annealing(RTA).The RTA process at 700℃led to sufficient crystallization of nanograins in the film,hindering their lateral growth by employing short annealing time of 5 min.The obtained Ag(Nb,Ta)O_(3) films showed an average grain size(D)of~14 nm(obtained by Debye-Scherrer formula)and a slender room temperature(RT)polarization-electric field(P-E)loop(Pr≈3.8 mC·cm^(−2) and P_(max)≈38 mC·cm^(−2) under an electric field of~3.3 MV·cm^(−1)),the P-E loop corresponding to a high recoverable energy density(W_(rec))of~46.4 J·cm^(−3) and an energy efficiency(η)of~80.3%.Additionally,by analyzing temperature-dependent dielectric property of the film,a significant downshift of the diffused phase transition temperature(T_(M2-M3))was revealed,which indicated the existence of a stable relaxor-like AFE phase near the RT.The downshift of the T_(M2-M3) could be attributed to a nanograin size and residual tensile strain of the film,and it led to excellent temperature stability(20-240℃)of the energy storage performance of the film.Our results indicate that the Ag(Nb,Ta)O_(3) film is a promising candidate for electrical energy storage applications.展开更多
Piezoresponse force microscopy(PFM)is an indispensable tool in the investigation of local electromechanical responses and polarization switching.The acquired data provide spatial information on the local disparity of ...Piezoresponse force microscopy(PFM)is an indispensable tool in the investigation of local electromechanical responses and polarization switching.The acquired data provide spatial information on the local disparity of polarization switching and electromechanical responses,making this technique advantageous over macroscopic approaches.Despite its widespread application in ferroelectrics,it has rarely been used to investigate the ferrielectric(FiE)behaviors in antiferroelectric(AFE)materials.Herein,the PFM was utilized to study the local electromechanical behavior and distribution of FiE,and the AFE phases of PbZrO_(3)thin-film were studied,where only the FiE behavior is observable using a macroscopic approach.The FiE region resembles a ferroelectric material at low voltages but exhibits a unique on-field amplitude response at high voltages.In contrast,the AFE region only yields an observable response at high voltages.Phase-field simulations reveal the coexistence of AFE and FiE states as well as the phase-transition processes that underpin our experimental observations.Our work illustrates the usefulness of PFM as an analytical tool to characterize AFE/FiE materials and their phase-coexistence behavior,thereby providing insights to guide property modification and potential applications.展开更多
AgNbO_(3)based antiferroelectric(AFE)ceramics have large maximum polarization and low remanent polarization,and thus are important candidates for fabricating dielectric capacitors.However,their energy storage performa...AgNbO_(3)based antiferroelectric(AFE)ceramics have large maximum polarization and low remanent polarization,and thus are important candidates for fabricating dielectric capacitors.However,their energy storage performances have been still large difference with those of lead-based AFEs because of their room-temperature ferrielectric(FIE)behavior.In this study,novel La^(3+)and Ta^(5+)co-substituted AgNbO_(3)ceramics are designed and developed.The introduction of La^(3+)and Ta^(5+)decreases the tolerance factor,reduces the polarizability of B-site cations and increases local structure heterogeneity of AgNbO_(3),which enhance AFE phase stability and refine polarization-electric field(PeE)loops.Besides,adding La^(3+)and Ta^(5+)into AgNbO_(3)ceramics causes the decrease of the grain sizes and the increase of the band gap,which contribute to increased Eb.As a consequence,a high recoverable energy density of 6.79 J/cm3 and large efficiency of 82.1%,which exceed those of many recently reported AgNbO_(3)based ceramics in terms of overall energy storage properties,are obtained in(Ag0.88La0.04)(Nb0.96Ta0.04)O_(3)ceramics.Furthermore,the discharge properties of the ceramic with discharge time of 16 ns and power density of 145.03 MW/cm3 outperform those of many lead-free dielectric ceramics.展开更多
Emerging new applications of antiferroelectric perovskite oxides based on their fascinating phase transformation between polar and nonpolar states have provided considerable attention to this class of materials even d...Emerging new applications of antiferroelectric perovskite oxides based on their fascinating phase transformation between polar and nonpolar states have provided considerable attention to this class of materials even decades after the discovery of antiferroelectricity.After presenting the challenge of formulating a precise definition of antiferroelectric materials,we briefly summarize proposed applications.In the following,we focus on the crystallographic structures of the antiferroelectric and ferroelectric phases of NaNbO_(3),which is emerging as a promising alternative to PbZrO_(3)-based systems.The field-induced phase transition behavior of NaNbO_(3)-based AFE materials in the form of single crystals,bulk ceramics,and multilayer ceramic capacitors is reviewed.Recent advances in a group of materials exhibiting high energy storage performance and relaxor-like behavior are also covered.The influence of electrode geometry on phase transition behavior and thus on the energy storage property is briefly addressed.The review concludes with an overview of the remaining challenges related to the fundamental understanding of the scientific richness of AFE materials in terms of structure,microstructure,defect transport under high fields,and phase transition dynamics required for their future development and applications.展开更多
基金This work was financially supported by the National Natural Science Foundation of China(Grant Nos.11864004 and 52072080)The author also thanks to the fund(Grant No.20KF-16)from the Key Laboratory of New Processing Technology for Nonferrous Metal&Materials,Ministry of Education/Guangxi Key Laboratory of Optical and Electronic Materials and Devices,Guilin University of Technology,Guilin(541004),China.
文摘The NaNbO_(3) antiferroelectrics have been considered as a potential candidate for dielectric capacitorsapplications. However, the high-electric-field-unstable antiferroelectric phase resulted in low energystorage density and efficiency. Herein, good energy storage properties were realized in (1-x)NaNbO_(3)- xNaTaO_(3) ceramics, by building a new phase boundary. As a result, a high recoverable energy density(Wrec) of 2.2 J/cm3 and efficiency (h) of 80.1% were achieved in 0.50NaNbO_(3)-0.50NaTaO_(3) ceramic at300 kV/cm. The excellent energy storage performance originates from an antiferroelectric-paraelectricphase boundary with simultaneously high polarization and low hysteresis, by tailoring the ratio ofantiferroelectric and paraelectric phases. Moreover, the 0.50NaNbO_(3)-0.50NaTaO_(3) ceramic also exhibitedgood temperature and frequency stability, together with excellent charge-discharge performance. Theresults pave a good way of designing new NaNbO_(3)-based antiferroelectrics with good energy storageperformance.
基金the Fundamental Research Funds for the Central Universities(University of Science and Technology Beijing:No.06500135)the Alexander von Humboldt Foundation for financial support+3 种基金support from the National Research Foundation of Korea(NRF)grant funded by the Korean government(MSIPNo.2019R1I1A1A01063888)USTB MatCom of Beijing Advanced Innovation Center for Materials Genome Engineeringthe financial supports of the PolyU Post-Dr Research Grant(No.G-YW5T)from The Hong Kong Polytechnic University。
文摘As a close relative of ferroelectricity,antiferroelectricity has received a recent resurgence of interest driven by technological aspirations in energy-efficient applications,such as energy storage capacitors,solid-state cooling devices,explosive energy conversion,and displacement transducers.Though prolonged efforts in this area have led to certain progress and the discovery of more than 100 antiferroelectric materials over the last 70 years,some scientific and technological issues remain unresolved.Herein,we provide perspectives on the development of antiferroelectrics for energy storage and conversion applications,as well as a comprehensive understanding of the structural origin of antiferroelectricity and field-induced phase transitions,followed by design strategies for new lead-free antiferroelectrics.We also envision unprecedented challenges in the development of promising antiferroelectric materials that bridge materials design and real applications.Future research in these directions will open up new possibilities in resolving the mystery of antiferroelectricity,provide opportunities for comprehending structure-property correlation and developing antiferroelectric/ferroelectric theories,and suggest an approach to the manipulation of phase transitions for real-world applications.
基金Project supported by the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20190405)the LOEWE program of the State of Hesse,Germany,within the project FLAME(Fermi Level Engineering of Antiferroelectric Materials for Energy Storage and Insulation Systems)。
文摘The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood.In this work,by using the phase field simulation,we have studied the polarization switching property of antiferroelectric domains.Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains,and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops.Moreover,we introduce charge defects into the sample and numerically investigate their influence.It is also shown that charge defects can induce local ferroelectric domains,which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop.Our results give insights into understanding the antiferroelectric phase transformation and optimizing the energy storage property in experiments.
基金Project supported by the National Basic Research Program of China (Grant No.2009CB623306)the International Science & Technology Cooperation Program of China (Grant No.2010DFR50480)the National Natural Science Foundation of China (Grant No.10976022)
文摘Antiferroelectric ferroelectric (AFE-FE) phase transition in ceramic Pbo.97Lao.02(Zro.75Snon36Tion14)O3 (PLZST) was studied by dielectric spectroscopy as functions of frequency (102-105 Hz) and pressure (0-500 MPa) under a DC electric field. The hydrostatic pressure-dependent remnant polarization and dielectric constant were mea- sured. The results show that remnant polarization of the metastable rhombohedral ferroelectric PLZST poled ceramic decreases sharply and depoles completely at phase transition under hydrostatic pressure. The dielectric constant um dergoes an abrupt jump twice during a load and unload cycle under an electric field. The two abrupt jumps correspond to two phase transitions, FE AFE and AFE-FE.
基金supported by the National Natural Science Foundation of China(Grant Nos.11374312,51401230,and 51522105)the Fund for Ningbo Municipal Science and Technology Innovation Team,China(Grant No.2015B11001)
文摘Free-standing antiferroelectric Pb(Zr0.95Ti0.05O3(PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition.X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an α-axis preferred orientation.The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm,but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film.The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm^3 and 54.5%,respectively.In contrast,after removing the substrate,the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm^3 and 67.9%,respectively.
基金supported by the National Basic Research Program of China (973 Program) (Grant No. 2009CB623306)the National Natural Science Foundation of China (Grant No. 60528008)+1 种基金the Key Science and Technology Research Project from the Ministry of Education of China (Grant No. 108180)the National Natural Science Foundation of China-NSAF (Grant No. 10976022)
文摘This paper investigates the pyroelectric of poled antiferroelectric (AFE) ceramic Pbo.97Lao.02 (Zro.69Sno.196 Ti0.114)03 and its remnant polarization dependence of hydrostatic pressure. The results show that the bound charges of poled sample can be released in short time by temperature field or pressure field. The released charge abruptly forms a large pulse current. The phenomena of released charge under external fields result in the ferroelectric-AFE phase transition induced by temperature or hydrostatic pressure.
基金National Natural Science F oundation of China(5 990 2 0 0 2 ) Aeronautical Science F oundation(99G5 2 0 65 )
文摘A new type of large\|displacement actuator called RAINBOW (Reduced And Internally Biased Oxide Wafer) was fabricated by a chemical reduction of PSZT antiferroelectric ceramic. It is found that PSZT was easily reduced and the optimal conditions for producing RAINBOW samples were determined to be 870℃ for 2~3 h. The AFE\|FE phase transitions occur at lower field strength in RAINBOWs compared with normal PSZT. Larger axial displacement (about 190μm) was obtained from the RAINBOWs by application of electric ...
基金supported by the National Natural Science Foundation of China(Grant Nos.51202273,11204304,and 11304334)the Science and Technology Commission of Shanghai Municipality,China(Grant No.14DZ2261000)
文摘The phase transitions, dielectric properties, and polarization versus electric field (P-E) hysteresis loops of Pbo.97Lao.02(Zr0.42Sn0.58-xTix)O3 (0.13≤ x ≤0.18) (PLZST) bulk ceramics were systematically investigated. This study exhibited a sequence of phase transitions by analyzing the change of the P-E hysteresis loops with increasing temperature. The anfiferroelectric (AFE) to ferroelectric (FE) phase boundary of PLZST with the Zr content of 0.42 was found to locate at the Ti content between 0.14 and 0.15. This work is aimed to improve the ternary phase diagram of lanthanum-doped PZST with the Zr content of 0.42 and will be a good reference for seeking high energy storage density in the PLZST system with low-Zr content.
基金This work was supported by the National Natural Science Foundation of China under grant No.1998061408.
文摘The crystal and electronic structure of antiferroelectric squaric acid is studied using density functional theory method, and the exchange correlation effects are treated by the generalized approximation. In order to understand the ferroelectricity of H2SQ in the molecular plane and the antiferroelectricity in whole crystal, the density of states, charge density distribution and band structure are calculated. The result showed that O2p and C2p play important roles in the interactions between layers. The hybridizations of 02s-Hls and 02p-Hls are responsible for the tendency to ferroelectricity within each layer.
基金National Natural Science Foundation of China(No.60806039,No.51175483)China Postdoctoral Science Foundation Projects(No.20090461275,No.201003658)+1 种基金Shanxi Provincial Natural Science Foundation of China(No.20100210023-6)Shanxi Provincial Young Leaders on Science
文摘Pb0.97La0.02Zr0.95Ti0.05O3(PLZT)antiferroelectric thick films derived from different precursor solution concentrations are prepared on platinized silicon substrates by sol-gel processing.The films present polycrystalline perovskite structure with a(100)preferred orientation by X-ray diffraction(XRD)analysis.The antiferroelectricity of the films is confirmed by the double hysteresis behaviors of polarization and double-bufferfly response of dielectric constant under the applied electrical field.Antiferroelectric properties and dielectric constant are improved while the polarization characteristic values are reduced with the increase of precursor solution concentration.The films at higher precursor solution concentration exhibit excellent dielectric properties.
基金This project is supported by National Natural Science Foundation of China (No.50135030)Aeronautical Science Foundation of China(No.04G52042)Pre-research fund of Weapons & Equipments of China(No.51412010505HK0208).
文摘A new type of large-displacement actuator called reduced and internally biased oxide wafer (RAINBOW) is fabricated by chemical reduction of Pb(Sn, Zr, Ti)O3(PSZT) antiferroelectric ceramics and its properties are investigated. It is found that PSZT is easily reduced and the optimal conditions for producing RAINBOW samples are determined to be 870 ℃ for 2-3 h. The antiferroelectrics-ferroelectrics phase transitions occur at lower field strength in RAINBOW actuators compared with normal PSZT actuators. Large axial displacements are also obtained from the RAINBOW actuator by application of electric fields exceeding the phase switching level. However, the field-induced displacement of the RAINBOW actuator is dependent on the manner of applying load on the samples.
文摘The complex dielectric constant of pure and cerium doped calcium-barium-niobate (CBN) was studied at frequencies 20 Hz ≤ f ≤ 1 MHz in the temperature range 300 K ≤ T ≤ 650 K and compared with the results for the well known ferroelectric relaxor strontium-barium-niobate (SBN). By the analysis of the systematically taken temperature and frequency dependent measurements of the dielectric constant the phase transition characteristic of the investigated materials was evaluated. From the results it must be assumed that CBN shows a slightly diffuse phase transition without relaxor behavior. Doping with cerium yields a definitely different phase transition characteristic with some indications for a relaxor type ferroelectric material, which are common from SBN.
基金supported by the U.S.Department of Energy’s Office of Energy Efficiency and Renewable Energy(EERE)under the Advanced Manufacturing Office(AMO)Award Number DEEE0009105.
文摘PbZrO_(3)-based antiferroelectric(AFE)ceramics are promising dielectrics for high-energy-density capacitors due to their reversible phase transitions during charge-discharge cycles.In this work,a new composition series,[Pb_(0.93-x)La_(0.02)(Li_(1/2)Bi_(1/2))_(x)Sr_(0.04)][Zr_(0.57)Sn_(0.34)Ti_(0.09)]O_(3),with Li^(+)and Bi^(3+)substitution of Pb^(2+)at x=0,0.04,0.08,0.12,0.16 is investigated for the microstructure evolution,ferroelectric(FE)and dielectric properties.It is found that Li^(+) and Bi^(3+) substitution can significantly reduce the sintering temperature and simultaneously enhance the dielectric breakdown strength.An ultrahigh energy efficiency(94.0%)and a large energy density(3.22 J/cm^(3))are achieved in the composition of x=0.12 with a low sintering temperature(1075℃).
基金financially supported by the National Natural Science Foundation of China(Nos.52172181,22105017)Interdisciplinary Research Project for Young Teachers of USTB(No.FRFIDRY-21–002)。
文摘Relaxor ferroic dielectrics have garnered increasing attention in the past decade as promising materials for energy storage.Among them,relaxor antiferroelectrics(AFEs)and relaxor ferroelectrics(FEs)have shown great promise in term of high energy storage density and efficiency,respectively.In this study,a unique phase transition from relaxor AFE to relaxor FE was achieved for the first time by introducing strong-ferroelectricity BaTiO_(3)into NaNbO_(3)-BiFeO_(3)system,leading to an evolution from AFE R hierarchical nanodomains to FE polar nanoregions.A novel medium state,consisting of relaxor AFE and relaxor FE,was identified in the crossover of 0.88NaNbO_(3)–0.07BiFeO_(3)–0.05BaTiO_(3)ceramic,exhibiting a distinctive core-shell grain structure due to the composition segregation.By harnessing the advantages of high energy storage density from relaxor AFE and large efficiency from relaxor FE,the ceramic showcased excellent overall energy storage properties.It achieved a substantial recoverable energy storage density W_(rec)~13.1 J/cm^(3)and an ultrahigh efficiencyη~88.9%.These remarkable values shattered the trade-off relationship typically observed in most dielectric capacitors between W_(rec)andη.The findings of this study provide valuable insights for the design of ceramic capacitors with enhanced performance,specifically targeting the development of next generation pulse power devices.
基金supported by the National Natural Science Foundation of China (Nos.22235002, 21825102 and 12004032)the Advanced Photon Source at Argonne National Laboratory was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No.DEAC02–06CH11357。
文摘The electric field-induced irreversible domain wall motion results in a ferroelectric(FE) hysteresis. In antiferroelectrics(AFEs), the irreversible phase transition is the main reason for the hysteresis effects, which plays an important role in energy storage performance. Compared to the well-demonstrated FE hysteresis,the structural mechanism of the hysteresis in AFE is not well understood. In this work, the underlying correlation between structure and the hysteresis effect is unveiled in Pb(Zr,Sn,Ti)O_(3) AFE system by using in-situ electrical biasing synchrotron X-ray diffraction. It is found that the AFE with a canting dipole configuration, which shows a continuous polarization rotation under the electric field, tends to have a small hysteresis effect. It presents a negligible phase transition, a small axis ratio, and electric field-induced lattice changing, small domain switching. All these features together lead to a slim hysteresis loop and a high energy storage efficiency. These results offer a deep insight into the structure-hysteresis relationship of AFEs and are helpful for the design of energy storage material.
基金The National Key R&D Program of China(Grant No.2021YFB3601301)the National Natural Science Foundation of China(Grant No.52225106 and 12241404)the Natural Science Foundation of Beijing,China(Grant No.JQ20010).
文摘A negative capacitance(NC)effect has been proposed as a critical pathway to overcome the‘Boltzmann tyranny’of electrons,achieve the steep slope operation of transistors and reduce the power dissipation of current semiconductor devices.In particular,the ferroic property in hafnium-based films with fluorite structure provides an opportunity for the application of the NC effect in electronic devices.However,to date,only a transient NC effect has been confirmed in hafnium-based ferroic materials,which is usually accompanied by hysteresis and is detrimental to low-power transistor operations.The stabilized NC effect enables hysteresis-free and low-power transistors but is difficult to observe and demonstrate in hafnium-based films.This difficulty is closely related to the polycrystalline and multi-phase structure of hafnium-based films fabricated by atomic layer deposition or chemical solution deposition.Here,we prepare epitaxial ferroelectric Hf_(0.5)Zr_(0.5)O_(2) and antiferroelectric ZrO_(2) films with single-phase structure and observe the capacitance enhancement effect of Hf_(0.5)Zr_(0.5)O_(2)/Al_(2)O_(3) and ZrO_(2)/Al_(2)O_(3) capacitors compared to that of the isolated Al_(2)O_(3) capacitor,verifying the stabilized NC effect.The capacitance of Hf_(0.5)Zr_(0.5)O_(2) and ZrO_(2) is evaluated as−17.41 and−27.64 pF,respectively.The observation of the stabilized NC effect in hafnium-based films sheds light on NC studies and paves the way for low-power transistors.
基金support from the National Natural Science Foundation of China (Grant Nos.51772175,52072218,and 52002192)Natural Science Foundation of Shandong Province (Grant Nos.ZR2020QE042,ZR2022ZD39,and ZR2022ME031)+6 种基金the Science,Education and Industry Integration Pilot Projects of Qilu University of Technology (Shandong Academy of Sciences) (Grant Nos.2022GH018 and 2022PY055)support from the Jinan City Science and Technology Bureau (Grant No.2021GXRC055)the Education Department of Hunan Province/Xiangtan University (Grant No.KZ0807969)funding for top talents at Qilu University of Technology (Shandong Academy of Sciences)support from the Jiangsu Province NSFC (Grant No.BK20180764)support from the National Key R&D Program of China (Grant No.2021YFB3601504)Natural Science Foundation of Shandong Province (Grant No.ZR2020KE019).
文摘Due to its lead-free composition and a unique double polarization hysteresis loop with a large maximum polarization(Pmax)and a small remnant polarization(Pr),AgNbO_(3)-based antiferroelectrics(AFEs)have attracted extensive research interest for electric energy storage applications.However,a low dielectric breakdown field(Eb)limits an energy density and its further development.In this work,a highly efficient method was proposed to fabricate high-energy-density Ag(Nb,Ta)O_(3) capacitor films on Si substrates,using a two-step process combining radio frequency(RF)-magnetron sputtering at 450℃and post-deposition rapid thermal annealing(RTA).The RTA process at 700℃led to sufficient crystallization of nanograins in the film,hindering their lateral growth by employing short annealing time of 5 min.The obtained Ag(Nb,Ta)O_(3) films showed an average grain size(D)of~14 nm(obtained by Debye-Scherrer formula)and a slender room temperature(RT)polarization-electric field(P-E)loop(Pr≈3.8 mC·cm^(−2) and P_(max)≈38 mC·cm^(−2) under an electric field of~3.3 MV·cm^(−1)),the P-E loop corresponding to a high recoverable energy density(W_(rec))of~46.4 J·cm^(−3) and an energy efficiency(η)of~80.3%.Additionally,by analyzing temperature-dependent dielectric property of the film,a significant downshift of the diffused phase transition temperature(T_(M2-M3))was revealed,which indicated the existence of a stable relaxor-like AFE phase near the RT.The downshift of the T_(M2-M3) could be attributed to a nanograin size and residual tensile strain of the film,and it led to excellent temperature stability(20-240℃)of the energy storage performance of the film.Our results indicate that the Ag(Nb,Ta)O_(3) film is a promising candidate for electrical energy storage applications.
基金supported by the National Research Foundation of Korea(NRF)grant funded by the Korean government(MSIP)(No.2019R1I1A1A01063888)the Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(No.2019R1A6A1A03033215)F.P.Z.acknowledges the Alexander von Humboldt Foundation(AvH)for the fellowship with award number 1203828,and Z.L.acknowledges the LOEWE program of the State of Hesse,Germany,within the project FLAME(Fermi Level Engineering of Antiferroelectric Materials for Energy Storage and Insulation Systems).
文摘Piezoresponse force microscopy(PFM)is an indispensable tool in the investigation of local electromechanical responses and polarization switching.The acquired data provide spatial information on the local disparity of polarization switching and electromechanical responses,making this technique advantageous over macroscopic approaches.Despite its widespread application in ferroelectrics,it has rarely been used to investigate the ferrielectric(FiE)behaviors in antiferroelectric(AFE)materials.Herein,the PFM was utilized to study the local electromechanical behavior and distribution of FiE,and the AFE phases of PbZrO_(3)thin-film were studied,where only the FiE behavior is observable using a macroscopic approach.The FiE region resembles a ferroelectric material at low voltages but exhibits a unique on-field amplitude response at high voltages.In contrast,the AFE region only yields an observable response at high voltages.Phase-field simulations reveal the coexistence of AFE and FiE states as well as the phase-transition processes that underpin our experimental observations.Our work illustrates the usefulness of PFM as an analytical tool to characterize AFE/FiE materials and their phase-coexistence behavior,thereby providing insights to guide property modification and potential applications.
基金supported by the National Key R&D Program of China(Grant No.2019YFB1503500)the National Natural Science Foundation of China(Grant Nos.51872079,52172113)+1 种基金the Natural Science Foundation of Hubei Province(Grant Nos.2019CFA006,2019CFA055)the Program for Science and Technology Innovation Team in Colleges of Hubei Province(T201901).
文摘AgNbO_(3)based antiferroelectric(AFE)ceramics have large maximum polarization and low remanent polarization,and thus are important candidates for fabricating dielectric capacitors.However,their energy storage performances have been still large difference with those of lead-based AFEs because of their room-temperature ferrielectric(FIE)behavior.In this study,novel La^(3+)and Ta^(5+)co-substituted AgNbO_(3)ceramics are designed and developed.The introduction of La^(3+)and Ta^(5+)decreases the tolerance factor,reduces the polarizability of B-site cations and increases local structure heterogeneity of AgNbO_(3),which enhance AFE phase stability and refine polarization-electric field(PeE)loops.Besides,adding La^(3+)and Ta^(5+)into AgNbO_(3)ceramics causes the decrease of the grain sizes and the increase of the band gap,which contribute to increased Eb.As a consequence,a high recoverable energy density of 6.79 J/cm3 and large efficiency of 82.1%,which exceed those of many recently reported AgNbO_(3)based ceramics in terms of overall energy storage properties,are obtained in(Ag0.88La0.04)(Nb0.96Ta0.04)O_(3)ceramics.Furthermore,the discharge properties of the ceramic with discharge time of 16 ns and power density of 145.03 MW/cm3 outperform those of many lead-free dielectric ceramics.
基金This work was supported by the Hessian State Ministry for Higher Education,Research and the Arts under the LOEWE collaborative project FLAME(Fermi level engineering of antiferro-electric materials for energy storage and insulation systems).
文摘Emerging new applications of antiferroelectric perovskite oxides based on their fascinating phase transformation between polar and nonpolar states have provided considerable attention to this class of materials even decades after the discovery of antiferroelectricity.After presenting the challenge of formulating a precise definition of antiferroelectric materials,we briefly summarize proposed applications.In the following,we focus on the crystallographic structures of the antiferroelectric and ferroelectric phases of NaNbO_(3),which is emerging as a promising alternative to PbZrO_(3)-based systems.The field-induced phase transition behavior of NaNbO_(3)-based AFE materials in the form of single crystals,bulk ceramics,and multilayer ceramic capacitors is reviewed.Recent advances in a group of materials exhibiting high energy storage performance and relaxor-like behavior are also covered.The influence of electrode geometry on phase transition behavior and thus on the energy storage property is briefly addressed.The review concludes with an overview of the remaining challenges related to the fundamental understanding of the scientific richness of AFE materials in terms of structure,microstructure,defect transport under high fields,and phase transition dynamics required for their future development and applications.