LPE Growth of InAsPSb on InAs:Melt Composition,Lattice Mismatch and Surface Morphology

The LPE growth of quaternary InAs11-x-yPxSby with x = 0.2 and y = 0.09 on InAs substrate has been studied. This composition is very suitable for the laser and detector applications at about 2.5 μm. We show that in InAsPSb/InAs system there is a determinate relation between the surface morphology and the lattice mismatch of the epi-wafers, by which we can easily control the melt composition to grow high quality hetero-structures. The reason has been discussed. The p-n junctions with fairly good carrier profile have been prepared in this system.

Syntheses and Crystal Structures of Two New Supramolecular Architectures Constructed from the Main Group Metal Chloride and Protonated 2-(3-Pyridyl)benzimidazole

The reactions of SbCl3 and HgCl2 with 2-（3-pyridyl）benzimidazole （PyBIm） in solution acidified with HCl have been investigated. The PyBIm ligands are protonated into 2-（3-pyridinio）benzimidazolium （H2PyBIm） cations and the corresponding metal ions are bonded with chloride atoms into coordination anions, forming two new coordination compounds, namely, （H2PyBIm）（SbCl5） 1 and （H2PyBIm）2（Hg2Cl8） 2. Both compounds were characterized by X-ray crystallography. Crystal data for 1： triclinic, space group P1^- with a = 5.7030（7）, b = 9.0625（11）, c = 16.5929（18） A, α = 91.808（7）°, β = 93.234（6）, γ = 99.216（7）°, C12H11N3SbCl5, Mr = 496.24, V = 844.44（17） A^3, Z = 2, Dc = 1.952 g/cm^3, μ（MoKα） = 2.419 mm^-1, F（000） = 480, the final R = 0.0496 and wR = 0.1382 for 3433 observed reflections （I 〉 2σ（I））. Crystal data for 2： monoclinic, space group P21/c with a = 7.8061（5）, b = 15.8127（9）, c = 12.2435（9） , β = 91.955（4）o, C24H22N6Hg2Cl8, Mr = 1079.26, V = 1510.40（17） 3, Z = 2, Dc = 2.373 g/cm3, μ（MoKα） = 10.889 mm-1, F（000） = 1008, the final R = 0.0293 and wR = 0.0562 for 2854 observed reflections （I 〉 2σ（I））. X-ray diffraction analysis reveals that the antimony（III） is five-coordinated, exhibiting a slightly distorted square-pyramidal coordination geometry; while in 2, a dimeric [Hg2Cl8]^4-anion consists of two trigonal bipyramids sharing two common edges. The organic cations and coordination anions are connected into a one-dimensional belt and a two-dimensional sheet through N-H···Cl hydrogen bonding interactions in compounds 1 and 2, respectively; both are further aggregated into 3D frameworks by strong π-π contacts.

Antimony-based intermetallic compounds for lithium-ion and sodium-ion batteries:synthesis,construction and application

The development of alternative electrode materials with high energy densities and power densities for batteries has been actively pursued to satisfy the power demands for electronic devices and hybrid electric vehicles. Recently, antimony（Sb）-based intermetallic compounds have attracted considerable research interests as new candidate anode materials for high-performance lithium-ion batteries（LIBs） and sodium-ion batteries（SIBs） due to their high theoretical capacity and suitable operating voltage. However, these intermetallic systems undergo large volume change during charge and discharge processes, which prohibits them from practical application. The rational construction of advanced anode with unique structures has been proved to be an effective approach to enhance its electrochemical performance. This review highlights the recent progress in improving and understanding the electrochemical performances of various Sb-based intermetallic compound anodes. The developments of synthesis and construction of Sb-based intermetallic compounds are systematically summarized. The electrochemical performances of various Sb-based intermetallic compound anodes are compared in its typical applications（LIBs or SIBs）.

Preparation of Bi_(2-x)Sb_xTe_3 thermoelectric films by electrodeposition

Bi2-xSbxTe3 thermoelectric films were electrochemically deposited from the solution containing Bi^3＋, HTeO2^＋and SbO^＋. ESEM （environmental scanning electron microscope） investigations indicated that the crystalline state of Bi2-xSbxTe3 films transformed from equiaxed crystal to dendritic crystal with the negative shift of deposition potential. XRD and EDS were used to characterize the structure and composition of the electrodeposited films. The Seebeck coefficient and the temperature dependence of the resistance of Bi2-xSbxTe3 films were measured. The results showed that the composition of the film electrodeposited at -0.5 V is Bi2-xSbxTe3 with the largest Seebeck coefficient of 213 μV·K^-1.

Effect of Sb-site nonstoichiometry on the structure and microwave dielectric properties of Li_(3)Mg_(2)Sb_(1-x)O_(6) ceramics

The non-stoichiometric Li_(3)Mg_(2)Sb_(1-x)O_(6)(0.05≤x≤0.125)compounds have been prepared via the mixed oxide method.The influences of Sb nonstoichiometry on the sintering behavior,microstructure,phase composition along with microwave dielectric performances for Li_(3)Mg_(2)Sb_(1-x)O_(6) ceramics were studied.Combined with X-ray diffraction(XRD)and Raman spectra,it was confirmed that phase composition could not be affected by the Sb nonstoichiometry and almost pure phase Li_(3)Mg_(2)SbO_(6) was formed in all compositions.Appropriate Sb-deficiency in Li_(3)Mg_(2)SbO_(6) not only lowered its sintering temperature but also remarkably improved its Q×f value.In particular,non-stoichiometric Li_(3)Mg_(2)Sb_(0.9)O_(6) ceramics sintered at 1250℃/5 h owned seldom low dielectric constant ε_(r)=10.8,near-zero resonant frequency temperature coefficient τ_(f)=-8.0 ppm/℃,and high quality factor Q×f=86,300 GHz(at 10.4 GHz).This study provides an alternative approach to ameliorate its dielectric performances for Li_(3)Mg_(2)SbO_(6)-based compounds through defect-engineering.

Laser induced crystallization of as-deposited amorphous Ge_2Sb_2Te_5 films

Crystallization is induced by pulsed laser irradiation of as-deposited amorphous Ge_2Sb_2Te_5 films. Changes of the irradiated areas have been analyzed with the reflectivity contrast. As laser fluences increasing, the reflectivity contrast increases from 0%-2% to 14%-16%, which indicates the structure of asdeposited films transforms from amorphous to crystalline phases. The process of crystallization driven by the movement and rearrangement of atoms is described. And also the influence of the pulse duration on the threshold of crystallization is discussed, the results show that a lower threshold of crystallization can be produced for as-deposited films irradiated by the laser with short pulse duration. However, by the laser with long pulse duration, crystallization can only be formed with a higher threshold. The crystallization of films by irradiation of laser pulses is studied by Raman spectra.