Aluminium doped ZnO thin films（ZnO︰Al） were deposited on transparent polymer substrates at room temperature by rf magnetron sputtering method from a ZnO target with Al2O3 of 2.0 wt%. Argon gas pressure varied from ...Aluminium doped ZnO thin films（ZnO︰Al） were deposited on transparent polymer substrates at room temperature by rf magnetron sputtering method from a ZnO target with Al2O3 of 2.0 wt%. Argon gas pressure varied from 0.5 Pa to 2.5 Pa with radio frequency power of 120 W. XRD results showed that all the ZnO︰Al films had a polycrystalline hexagonal structure and a （002） preferred orientation with the c-axis perpendicular to the substrate. The grain sizes of the films were 6.3-14.8 nm.SEM images indicated the ZnO︰Al film with low Argon gas pressure was denser and the deposition rate of the films depended strongly on the Argon gas pressure, increasing firstly and then decreasing with increasing the pressure. The highest deposition rate was 5.2 nm/min at 1 Pa. The optical transmittance of the ZnO︰Al films increased and the blue shift of the absorption edge appeared when the Argon gas pressure increased. The highest transmittance of obtained ZnO︰Al films at 2.5 Pa was about 85% in the visible region. The electrical properties of the films were worsened with the increase of the Argon gas power from 1 Pa to 2.5 Pa. The resistivity of obtained film at 1.0 Pa was 2.79×10-2 Ω·cm.展开更多
An experiment of femtosecond laser-induced breakdown in argon with a pressure below normal atmospheric pressure is performed. The breakdown spectrum is mainly due to the electronic relaxation of excited Ar atoms and A...An experiment of femtosecond laser-induced breakdown in argon with a pressure below normal atmospheric pressure is performed. The breakdown spectrum is mainly due to the electronic relaxation of excited Ar atoms and Ar ions. The lifetimes and characteristics of the Ar plasma are extensively studied by the time-integrated and time-resolved optical emission spectroscopy technique, which is also discussed. Under the assumption of local thermodynamic equilibrium （LTE）, the plasma temperature is calculated. Moreover, the electron density is accessed from the Stark broadening of the ionized argon lines. Finally, the validity of applications of LTE is also discussed.展开更多
Transparent conductive aluminum doped zinc oxide（ZnO：Al,AZO） films were prepared on glass substrates by rf（radio frequency） magnetron sputtering from ZnO： 3wt% Al_2O_3 ceramic target. The effect of argon gas pre...Transparent conductive aluminum doped zinc oxide（ZnO：Al,AZO） films were prepared on glass substrates by rf（radio frequency） magnetron sputtering from ZnO： 3wt% Al_2O_3 ceramic target. The effect of argon gas pressure（PAr） was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction（XRD） and scanning electron microscopy（SEM） showed that the ZnO：Al thin films were（002） oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10^（-4） Ω？cm（sheet resistance=9.6 Ω/sq. for a thickness=600 nm） obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible（UV-VIS） spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.展开更多
The Tb40（Fe49Co49V2）60 films were fabricated by magnetron cosputtering from a multiple target arrangement at different argon pressures.The samples were investigated using X-ray diffraction,magnetic force microscope ...The Tb40（Fe49Co49V2）60 films were fabricated by magnetron cosputtering from a multiple target arrangement at different argon pressures.The samples were investigated using X-ray diffraction,magnetic force microscope and vibrating sample magnetometer.A strong perpendicular anisotropy was obtained for the sample prepared at 0.4 Pa.The easy direction of magnetization could be turned from perpendicular to in-plane direction either at high working pressures（P Ar ＆gt;2.0 Pa） or by annealing at temperatures higher than 250 °C.An excellent magnetic softness with coercivity below 3 mT and saturating field of 20 mT in film-plane direction was obtained for the sample prepared at 0.7 Pa and then annealed at 350 °C.展开更多
基金Funded by Key Project of Natural Science Foundation of Hubei Province(No.2008CDA025)
文摘Aluminium doped ZnO thin films（ZnO︰Al） were deposited on transparent polymer substrates at room temperature by rf magnetron sputtering method from a ZnO target with Al2O3 of 2.0 wt%. Argon gas pressure varied from 0.5 Pa to 2.5 Pa with radio frequency power of 120 W. XRD results showed that all the ZnO︰Al films had a polycrystalline hexagonal structure and a （002） preferred orientation with the c-axis perpendicular to the substrate. The grain sizes of the films were 6.3-14.8 nm.SEM images indicated the ZnO︰Al film with low Argon gas pressure was denser and the deposition rate of the films depended strongly on the Argon gas pressure, increasing firstly and then decreasing with increasing the pressure. The highest deposition rate was 5.2 nm/min at 1 Pa. The optical transmittance of the ZnO︰Al films increased and the blue shift of the absorption edge appeared when the Argon gas pressure increased. The highest transmittance of obtained ZnO︰Al films at 2.5 Pa was about 85% in the visible region. The electrical properties of the films were worsened with the increase of the Argon gas power from 1 Pa to 2.5 Pa. The resistivity of obtained film at 1.0 Pa was 2.79×10-2 Ω·cm.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11135002,11075069,91026021,11075068and 10975065the Scholarship Award for Excellent Doctoral Student by the Ministry of Education of China
文摘An experiment of femtosecond laser-induced breakdown in argon with a pressure below normal atmospheric pressure is performed. The breakdown spectrum is mainly due to the electronic relaxation of excited Ar atoms and Ar ions. The lifetimes and characteristics of the Ar plasma are extensively studied by the time-integrated and time-resolved optical emission spectroscopy technique, which is also discussed. Under the assumption of local thermodynamic equilibrium （LTE）, the plasma temperature is calculated. Moreover, the electron density is accessed from the Stark broadening of the ionized argon lines. Finally, the validity of applications of LTE is also discussed.
基金Funded by the Key Projects in the National Science&Technology Pillar Program during the Twelfth Five-year Plan Period(No.2011BAJ04B04)
文摘Transparent conductive aluminum doped zinc oxide（ZnO：Al,AZO） films were prepared on glass substrates by rf（radio frequency） magnetron sputtering from ZnO： 3wt% Al_2O_3 ceramic target. The effect of argon gas pressure（PAr） was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction（XRD） and scanning electron microscopy（SEM） showed that the ZnO：Al thin films were（002） oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10^（-4） Ω？cm（sheet resistance=9.6 Ω/sq. for a thickness=600 nm） obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible（UV-VIS） spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.
基金supported by National Natural Science Foundation of China (50871007)
文摘The Tb40（Fe49Co49V2）60 films were fabricated by magnetron cosputtering from a multiple target arrangement at different argon pressures.The samples were investigated using X-ray diffraction,magnetic force microscope and vibrating sample magnetometer.A strong perpendicular anisotropy was obtained for the sample prepared at 0.4 Pa.The easy direction of magnetization could be turned from perpendicular to in-plane direction either at high working pressures（P Ar ＆gt;2.0 Pa） or by annealing at temperatures higher than 250 °C.An excellent magnetic softness with coercivity below 3 mT and saturating field of 20 mT in film-plane direction was obtained for the sample prepared at 0.7 Pa and then annealed at 350 °C.
