For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular be...For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.展开更多
The Hesar pluton in the northern Urumieh-Dokhtar magmatic arc hosts numerous mafic-microgranular enclaves(MMEs).Whole rock geochemistry,mineral chemistry,zircon U-Pb and Sr-Nd isotopes were measured.It is suggested th...The Hesar pluton in the northern Urumieh-Dokhtar magmatic arc hosts numerous mafic-microgranular enclaves(MMEs).Whole rock geochemistry,mineral chemistry,zircon U-Pb and Sr-Nd isotopes were measured.It is suggested that the rocks are metaluminous(A/CNK=1.32-1.45),subduction-related I-type calc-alkaline gabbro to diorite with similar mineral assemblages and geochemical signatures.The host rocks yielded an U-Pb crystallization age of 37.3±0.4 Ma for gabbro-diorite.MMEs have relatively low SiO_(2) contents(52.9-56.6 wt%)and high Mg^(#)(49.8-58.7),probably reflecting a mantle-derived origin.Chondrite-and mantle-normalized trace element patterns are characterized by LREE and LILE enrichment,HREE and HFSE depletion with slight negative Eu anomalies(Eu/Eu^(*)=0.86-1.03).The host rocks yield(^(87)Sr/^(86)Sr)_(i) ratios of 0.70492-0.70510,positive ε_(Nd)(t)values of+1.55-+2.06 and T_(DM2)of 707-736 Ma,which is consistent with the associated mafic microgranular enclaves((^(87)Sr/^(86)Sr)_(i)=0.705014,ε_(Nd)(t)=+1.75,T_(DM2)=729 Ma).All data suggest magma-mixing for enclave and host rock formation,showing a complete equilibration between mixed-mafic and felsic magmas,followed by rapid diffusion.The T_(DM1)(Nd)and T_(DM2)(Nd)model ages and U-Pb dating indicate that the host pluton was produced by partial melting of the lower continental crust and subsequent mixing with injected lithospheric mantlederived magmas in a pre-collisional setting of Arabian-Eurasian plates.Clinopyroxene composition indicates a crystallization temperature of~1000℃ and a depth of~9 km.展开更多
为提高系统运行稳定性,高补偿度串补装置广泛投入使用,但线路故障后潜供电流存在高幅值的低频分量,潜供电弧难以自熄。针对此问题,基于交直流混联输电线路,研究了不同布置方式下串补度对潜供电流与恢复电压幅值影响,提出了一种固定串补(...为提高系统运行稳定性,高补偿度串补装置广泛投入使用,但线路故障后潜供电流存在高幅值的低频分量,潜供电弧难以自熄。针对此问题,基于交直流混联输电线路,研究了不同布置方式下串补度对潜供电流与恢复电压幅值影响,提出了一种固定串补(fixed series compensation,FSC)和可控串补(thyristor controlled series compensation,TCSC)混合复用抑制潜供电弧的方法。此外,为满足线路对高补偿度的需求,设计FSC和TCSC混合复用串补度最佳配置方案。结果表明,交直流混联线路采用串补度40%的双平台分散布置方式,潜供电流与恢复电压幅值达到最小,燃弧时间最短。高补偿度串补线路TCSC采用串补度10%、20%的配置方案更利于熄弧,提高重合闸成功率。展开更多
在介绍了双丝旁路耦合电弧熔化极气体保护焊(双丝旁路耦合电弧(Double-electrode gas metal arc welding,DE-GMAW))高效焊接工艺原理的基础之上,采用双闭环反馈解耦智能控制系统,进行双丝旁路耦合电弧GMAW高速焊接工艺试验,测量双丝旁...在介绍了双丝旁路耦合电弧熔化极气体保护焊(双丝旁路耦合电弧(Double-electrode gas metal arc welding,DE-GMAW))高效焊接工艺原理的基础之上,采用双闭环反馈解耦智能控制系统,进行双丝旁路耦合电弧GMAW高速焊接工艺试验,测量双丝旁路耦合电弧GMAW母材热输入,分析双丝旁路耦合电弧GMAW高效焊接工艺机理,并对双丝旁路耦合电弧GMAW高效焊接工艺方法进行改进,进一步研究混合气体保护下的双丝旁路耦合电弧GMAW及其熔滴过渡行为,且开发出单电源双丝旁路耦合电弧GMAW。研究表明:采用双闭环反馈解耦智能控制系统使双丝旁路耦合电弧GMAW焊接过程稳定性更好、精确度更高且响应速度更快;旁路分流是实现高效焊接的同时降低母材热输入的关键;采用混合气体保护下的双丝旁路耦合电弧GMAW能进一步提高焊接过程稳定性,单电源双丝旁路耦合电弧GMAW能形成良好的焊缝成形,且设备成本低。展开更多
基金Project supported by the Enterprise Science and Technology Correspondent for Guangdong Province,China (Grant No.GDKTP2021015200)。
文摘For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.
基金supported by the Iran National Science Foundation(INSF)(Grant No.98012578)projects from the National Natural Science Foundation of China(Grant Nos.41473033,41673031)。
文摘The Hesar pluton in the northern Urumieh-Dokhtar magmatic arc hosts numerous mafic-microgranular enclaves(MMEs).Whole rock geochemistry,mineral chemistry,zircon U-Pb and Sr-Nd isotopes were measured.It is suggested that the rocks are metaluminous(A/CNK=1.32-1.45),subduction-related I-type calc-alkaline gabbro to diorite with similar mineral assemblages and geochemical signatures.The host rocks yielded an U-Pb crystallization age of 37.3±0.4 Ma for gabbro-diorite.MMEs have relatively low SiO_(2) contents(52.9-56.6 wt%)and high Mg^(#)(49.8-58.7),probably reflecting a mantle-derived origin.Chondrite-and mantle-normalized trace element patterns are characterized by LREE and LILE enrichment,HREE and HFSE depletion with slight negative Eu anomalies(Eu/Eu^(*)=0.86-1.03).The host rocks yield(^(87)Sr/^(86)Sr)_(i) ratios of 0.70492-0.70510,positive ε_(Nd)(t)values of+1.55-+2.06 and T_(DM2)of 707-736 Ma,which is consistent with the associated mafic microgranular enclaves((^(87)Sr/^(86)Sr)_(i)=0.705014,ε_(Nd)(t)=+1.75,T_(DM2)=729 Ma).All data suggest magma-mixing for enclave and host rock formation,showing a complete equilibration between mixed-mafic and felsic magmas,followed by rapid diffusion.The T_(DM1)(Nd)and T_(DM2)(Nd)model ages and U-Pb dating indicate that the host pluton was produced by partial melting of the lower continental crust and subsequent mixing with injected lithospheric mantlederived magmas in a pre-collisional setting of Arabian-Eurasian plates.Clinopyroxene composition indicates a crystallization temperature of~1000℃ and a depth of~9 km.
文摘为提高系统运行稳定性,高补偿度串补装置广泛投入使用,但线路故障后潜供电流存在高幅值的低频分量,潜供电弧难以自熄。针对此问题,基于交直流混联输电线路,研究了不同布置方式下串补度对潜供电流与恢复电压幅值影响,提出了一种固定串补(fixed series compensation,FSC)和可控串补(thyristor controlled series compensation,TCSC)混合复用抑制潜供电弧的方法。此外,为满足线路对高补偿度的需求,设计FSC和TCSC混合复用串补度最佳配置方案。结果表明,交直流混联线路采用串补度40%的双平台分散布置方式,潜供电流与恢复电压幅值达到最小,燃弧时间最短。高补偿度串补线路TCSC采用串补度10%、20%的配置方案更利于熄弧,提高重合闸成功率。
文摘在介绍了双丝旁路耦合电弧熔化极气体保护焊(双丝旁路耦合电弧(Double-electrode gas metal arc welding,DE-GMAW))高效焊接工艺原理的基础之上,采用双闭环反馈解耦智能控制系统,进行双丝旁路耦合电弧GMAW高速焊接工艺试验,测量双丝旁路耦合电弧GMAW母材热输入,分析双丝旁路耦合电弧GMAW高效焊接工艺机理,并对双丝旁路耦合电弧GMAW高效焊接工艺方法进行改进,进一步研究混合气体保护下的双丝旁路耦合电弧GMAW及其熔滴过渡行为,且开发出单电源双丝旁路耦合电弧GMAW。研究表明:采用双闭环反馈解耦智能控制系统使双丝旁路耦合电弧GMAW焊接过程稳定性更好、精确度更高且响应速度更快;旁路分流是实现高效焊接的同时降低母材热输入的关键;采用混合气体保护下的双丝旁路耦合电弧GMAW能进一步提高焊接过程稳定性,单电源双丝旁路耦合电弧GMAW能形成良好的焊缝成形,且设备成本低。
