We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted ...We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.展开更多
In this article,we report the first experimental demonstration of an eight-wavelength λ/8 phased-shifted laser array based on the REC technique in the 1.3 μm wavelength domain.Measurement results exhibit good linear...In this article,we report the first experimental demonstration of an eight-wavelength λ/8 phased-shifted laser array based on the REC technique in the 1.3 μm wavelength domain.Measurement results exhibit good linearity of lasing wavelength with+/-0.35 nm wavelength residual.The SLM property was ensured with SMSRs all larger than 38 dB.Moreover,the directmodulation performance was also tested.The experimental results show that the modulation bandwidth can reach up to 13GHz even at the small injection current of 40 mA and the measured spurious-free dynamic range(SFDR)is up to 87 dB/Hz2/3,which shows good linearity.These measurements show that REC-based λ/8 phased-shifted laser array has good modulation performance and it may find potential application in actual fiber-optic systems.展开更多
文摘We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.
基金supported by the National Natural Science Foundation of China(Grant No.61090392)the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2011AA010300)the Key Programs of the Ministry of Education of China(Grant No.20100091110005)
文摘In this article,we report the first experimental demonstration of an eight-wavelength λ/8 phased-shifted laser array based on the REC technique in the 1.3 μm wavelength domain.Measurement results exhibit good linearity of lasing wavelength with+/-0.35 nm wavelength residual.The SLM property was ensured with SMSRs all larger than 38 dB.Moreover,the directmodulation performance was also tested.The experimental results show that the modulation bandwidth can reach up to 13GHz even at the small injection current of 40 mA and the measured spurious-free dynamic range(SFDR)is up to 87 dB/Hz2/3,which shows good linearity.These measurements show that REC-based λ/8 phased-shifted laser array has good modulation performance and it may find potential application in actual fiber-optic systems.
