A New Modification Michaelis-Arbuzov, Allen, Milobendzky-Shulgin, Michaelis-Becker and Raymond Reactions with Organic Compounds Arsenic, Antimony and Bismuth

In this work study, we investigated possibility of modifying the new Michaelis Allen, Milobendzky-Shulgin, Michaelis-Becker, Raymond reactions with organic compounds of arsenic, antimony and bismuth is discovered. A new mechanism for possible reactions has been proposed.

A New Approach to Modification of Rearrangements in Metallorganic Chemistry of Phosphorus, Arsenic, Antimony and Bismuth

We discovered a new approach modification Bamberger, Barton, Beckmann, Wallach, Gabriel, Hofmann, Hofmann A.W. Martius, Dimroth, Semmler-Wolff-Schroeter, Sus, Claisen, Newman-Kwart, Orlon, Pistschimuka, Robev, Smiles, Sawdey, Sommelet, Stevens, Tiemann, Fischer-Hepp, Chapman, Chattaway, Schonberg, Stieglitz Rearrangements with of phosphorous, arsine, stibine and bismuthine in organometallic chemistry. The authors have proposed a new mechanism for possible reactions.

New Modifications Bart, Bdchamp, Mayer, Rosenmund, Scheller, Sherlyn-Braz Reactions with Halides of Arsenic, Antimony and Bismuth

It was discovered a new approach modification Bart, Beschamp, Mayer, Rosenmund, Scheller, Sherlyn-Braz reactions with of arsine, stibine and bismuthine in organometallic chemistry. The authors have proposed a new mechanism for possible reactions.

Chemical Thermodynamic Analysis of Silicon Doping in MOCVD of GaAs System

With chemical thermodynamic method, enthalpies, entropies and heat capacities of (SiH3)nAsH3-n (1&len&le3), (CH3)4-mSiH4-m (1&lem&le4) and their radicals were calculated. Homogeneous reaction equilibrium of 65 gas phase species in SiH4 (or Si2H6) doped MOCVD GaAs by TMG and AsH3 system was analyzed, the relations of gas phase partial pressures with growth temperatures and input partial pressures were calculated. When the gas phase is saturated with a GaAs: Si solid, the gas phase partial pressures and solid phase silicon impurity (SiGa-As, Ga-SiAs, SiGa-SiAs) concentrations were calculated under different growth temperatures and input partial pressures. With the above results, some of the Si doping behavior in MOCVD of GaAs were explained.

Monoarsacyclacenes-PM3 Treatment

Monoarsacyclacenes of P and F types having 3～8 arenoid rings were considered for PM3 type semiempirical molecular orbital calculations. These, yet nonexistent structures, were expected to be endothermic but stable molecules exhibiting no cryptoannulenic effect.

p-Arsanilic acid decontamination over a wide pH range using biochar-supported manganese ferrite material as an effective persulfate catalyst:Performances and mechanisms

Direct chemical oxidation and pure adsorption could not effectively remove p-Arsanilic acid(p-ASA)and the released inor-ganic arsenic.Herein,one novel biochar supported MnFe_(2)O_(4)(MFB)was synthesized and adopted for p-ASA degradation and synchronous adsorption of the generated inorganic arsenic.The MFB/persulfate(PS)system could remain effective under a wide pH range(3.0-9.0),and the released arsenic could be removed simultaneously by MFB.Mechanism investiga-tion revealed that the functional groups of MFB(i.e.O-C=O and C=O),Fe and Mn oxides on MFB all contributed to PS activation.O_(2)^(·−)and^(1)O_(2)were the main reactive oxygen species(ROS)responsible for p-ASA degradation,and^(1)O_(2)was the predominant ROS.Besides,the MFB possessed superior reusability.Therefore,it is expected to develop a potential method for organic arsenic contaminants removal via an oxidation-adsorption process,and the results could also shed light on the better understanding of the PS activation mechanisms.