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The cardiac assistant effect of extra-aortic balloon pump on animals
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作者 周楚芝 《外科研究与新技术》 2011年第3期175-176,共2页
Objective The aim of this study was to determine the effect of a new method of cardiac assistant therapy with an extra-aortic balloon pump on the experimental dogs in which myocardial ischemia or infarction were induc... Objective The aim of this study was to determine the effect of a new method of cardiac assistant therapy with an extra-aortic balloon pump on the experimental dogs in which myocardial ischemia or infarction were induced,and to observe its effectiveness and feasibility. Methods Twelve animal models of myocardia,1 infarction were established with the method of left 展开更多
关键词 The cardiac assistant effect of extra-aortic balloon pump on animals
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Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer 被引量:1
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作者 伍伟 张波 +2 位作者 罗小蓉 方健 李肇基 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第3期625-629,共5页
A novel low specific on-resistance (Ron,sp) lateral double-diffused metal oxide semiconductor (LDMOS) with a buried improved super-junction (BISJ) layer is proposed. A super-junction layer is buried in the drift... A novel low specific on-resistance (Ron,sp) lateral double-diffused metal oxide semiconductor (LDMOS) with a buried improved super-junction (BISJ) layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage (BV). The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively. 展开更多
关键词 multiple-direction assisted depletion effect breakdown voltage (BV) electric field modulation lateral double-diffusion MOSFET (LDMOS)
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