Heptad Phase Vortex Array in Extremely Deep Fresnel Diffraction Region Generated by Asymmetrical Metal Subwavelength Holes Film

We report a heptad vortex array structure in the wave fields in an extremely deep Fresnel diffraction region by asymmetrical subwavelength holes in a metal film illuminated with linearly polarized light. A Mach Zehnder interferometer with a microscopic objective is used to record the wave fields at different distance＆ and the phase maps are extracted by Fourier transform of the interference intensities. We study the evolutions of the heptad vortex array with distance from the sample to the object plane. To explain the formations and the evolutions of the vortex array, we calculate the diffracted wave fields with Kirchhoff＇s diffraction theory. The calculations are basically consistent with the experimental results, and the properties of the heptad vortex array structure are reasonably explained.

Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors（R_1, R_2, R_3 and R_4/locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator（SOI） wafer by micro electromechanical system（MEMS） technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity（TCS） for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r_1 and r_2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.