We reported the growth of N-polar InN films on N-polar GaN/sapphire substrates by pulsed metal-organic vapor phase epitaxy. The crystalline quality, surface morphology, optical and electrical properties of N-polar InN...We reported the growth of N-polar InN films on N-polar GaN/sapphire substrates by pulsed metal-organic vapor phase epitaxy. The crystalline quality, surface morphology, optical and electrical properties of N-polar InN films were investigated in details by varying the breaking time and trimethylindium（TMIn） duration of pulse cycle. It has been found that when the breaking time and the TMIn duration in each cycle remain at 30 and 60 s, respectively, the N-polar InN film obtained exhibits a better crystalline quality and greater optical properties. Meanwhile, the surface morphology and electrical properties of the N-polar InN films also greatly depend on the given growth conditions.展开更多
The growth kinetic factors affecting the uniformity of AlGaAs in a horizontal atmospheric MOVPE (AP-MOVPE) reactor with a horizontal susceptor were investigated. The decrease in the growth rate of AlGaAs (R-AlGaAs) in...The growth kinetic factors affecting the uniformity of AlGaAs in a horizontal atmospheric MOVPE (AP-MOVPE) reactor with a horizontal susceptor were investigated. The decrease in the growth rate of AlGaAs (R-AlGaAs) in the now direction is related to both the gas depletion and the decreasing growth rate of GaAs (R-GaAs) with the increasing gas temperature in this direction. The change of x in the flow direction has relations not only to the different changes of R-GaAs and R-AlAs(the growth rate of AlAs) with the gas temperature, according to which x will increase in the now direction, but also to the higher depletion rate of Al containing species compared with that of Ga containing species, according to which x: will decrease. Due to the similar reason, the loss of symmetry about the length axis of the susceptor can also result in the monotone increase or decrease in thickness and x in the crosswise direction.展开更多
Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol techn...Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol technology for producing nanostruetures for a variety of applications in semiconductor physics and device technology. Examples are given from： production of metal and metal alloy particles： semiconductor nanoparticles; semiconductor nanowires, grown both in the aerosol phase and on substrates; physics studies based on individual aerosol-generated devices; and large area deviees based on aerosol particles.展开更多
文摘We reported the growth of N-polar InN films on N-polar GaN/sapphire substrates by pulsed metal-organic vapor phase epitaxy. The crystalline quality, surface morphology, optical and electrical properties of N-polar InN films were investigated in details by varying the breaking time and trimethylindium（TMIn） duration of pulse cycle. It has been found that when the breaking time and the TMIn duration in each cycle remain at 30 and 60 s, respectively, the N-polar InN film obtained exhibits a better crystalline quality and greater optical properties. Meanwhile, the surface morphology and electrical properties of the N-polar InN films also greatly depend on the given growth conditions.
文摘The growth kinetic factors affecting the uniformity of AlGaAs in a horizontal atmospheric MOVPE (AP-MOVPE) reactor with a horizontal susceptor were investigated. The decrease in the growth rate of AlGaAs (R-AlGaAs) in the now direction is related to both the gas depletion and the decreasing growth rate of GaAs (R-GaAs) with the increasing gas temperature in this direction. The change of x in the flow direction has relations not only to the different changes of R-GaAs and R-AlAs(the growth rate of AlAs) with the gas temperature, according to which x will increase in the now direction, but also to the higher depletion rate of Al containing species compared with that of Ga containing species, according to which x: will decrease. Due to the similar reason, the loss of symmetry about the length axis of the susceptor can also result in the monotone increase or decrease in thickness and x in the crosswise direction.
文摘Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol technology for producing nanostruetures for a variety of applications in semiconductor physics and device technology. Examples are given from： production of metal and metal alloy particles： semiconductor nanoparticles; semiconductor nanowires, grown both in the aerosol phase and on substrates; physics studies based on individual aerosol-generated devices; and large area deviees based on aerosol particles.
