Effect of P/M value on the preforms and microstructures of spray formed 70Si30Al alloy

A novel 70Si30Al alloy was prepared by the spray forming process for electronic packaging materials. The effect of the ratio of atomization pressure to metal melt mass flux rate （P/M） on the preforms and microstructures of the spray-deposited 70Si30Al alloy was studied. The results indicate that the PIM value has a considerable influence on the formation of the preforms and the optimal value is in the range of 0.209-0.231 MPa/（kg.min^-1）. The microstructure of the spray formed 70Si30AI alloy is fine and homogenous. The primary silicon phases distributing in the aluminum matrix evenly are fine and irregular. The aluminum matrix is divided into two groups： supersaturated α-Al phase or α-Al phase and Al-Si pseudoeutectic phase or Al-Si eutectic phase.

The numerical simulation of the movements and thermal states of atomized metal droplets in the spray forming process

Numerical simulation was performed in an atomizing chamber to investigate the movements and thermal states of the atomized metal droplets in the spray forming process. The velocity, temperature and solid fractions of metal droplets with different diameters and under different atomizing pressures were investigated. The results indicate that a higher atomizing pressure results in the increased flying velocity of the metal droplets and a decrease in the cone-shaped angle formed by their flight paths. Synchronously, the cooling of the metal droplets is accelerated and the time of the complete solidification process is shortened. Under the same atomization pressure, large metal droplets have a lower flying speed and a lower rate of temperature decrease in the atomizing chamber than small metal droplets. In addition, metal droplets flying along the edge of the atomizing region cool faster than those flying in the core region.

Numerical simulation of effect of various parameters on atomization in an annular slit atomizer

As the width-thickness ratio of the discrete nozzle atomizer’s discrete hole greatly influences the loss of atomizing gas flow rate,the discrete nozzle atomizer was transformed into an annular slit atomizer with the same total nozzle outlet area.A numerical simulation study on the effect of various parameters on the atomization in the annular slit atomizer was carried out by coupling both the large eddy simulation(LES)and volume of fluid(VOF)model,which is based on the applicability of LES in capturing the breakup behavior of transient liquid droplets and the advantage of VOF method in directly capturing the phase interface.The simulation results showed that the increase in the atomization pressure makes the gas gain higher momentum,while the increase in the nozzle intersection angle decreases the distance between the nozzle exit and the computational domain axis.The increase in these two variables results in enhancing the gas-liquid interaction in the primary atomization zone and the formation of more aluminum droplets simultaneously.It is considered that the atomization effect becomes better when atomization pressure is 2.5 MPa,and the nozzle intersection angle is 60°.Industrial tests showed that the aluminum powder prepared by the optimized annular slit atomizer has a finer mean particle size and a higher yield of fine powder.The numerical simulation results agree well with the industrial test data of the powder particle size.

Determination of total sulfur in geothermal water by inductively coupled plasma-atomic emission spectrometry

Sulfur speciation and concentration in geothermal water are of great significance for the research and utilization of the water resources.In most situations,it is necessary to determine the total sulfur in geothermal water.In this study,the method was established for the determination of determining total sulfur content-the inductively coupled plasma-atomic emission spectrometry(ICP-AES),with the wavelength of 182.034 nm selected in spectral line of sulfur.It was identified that the optimal working conditions of the ICP-AES instrument were 1200 W for high frequency generator power 9 mm for vertical observation height,0.30 MPa atomizer pressure,and 50 r/min analytical pump speed.The matrix interference of the method was eliminated by the matrix matching method.Using this method,sulfur detection limit and minimum quantitative detection limit were 0.028 mg/L and 0.110 mg/L,respectively,whilst the linear range was 0.0-100.0 mg/L.The recovery rate of sample was between 90.67%and 108.7%,and the relative standard deviation(RSD)was between 0.36%and 2.14%.The method was used to analyze the actual samples and the results were basically consistent with the industry standard method.With high analysis efficiency,the method has low detection limit and minimum quantitative detection limit,wide linear range,good precision and accuracy,and provides an important detection method for the determination of total sulfur in geothermal water.

NUMERICAL ANALYSIS OF THE 3-D FLOW FIELD OF PRESSURE ATOMIZERS WITH V-SHAPED CUT AT ORIFICE

Axisymmetric liquid jets have been studied extensively for more than one century, while non-axisymmetric jets are also very common in engineering applications but attract less concern. Based on Eulerian fluid-fluid model in Fluent software, this article analysizes the 3-D flow fields of pressure atomizers with V-shaped cut at orifice, which will result in a non-axisymmetric liquid jet. Flow rate analysis and jet structure analysis are carried out, the results show that the flow rate can be formulated by adding a correction coefficient to the formula of inviscid axisymmetric jets in atomization regime, when the Weber number is low enough to make the flow fall out of atomization regime, and the jet structure together with the flow rate formula will change. Analysis shows that the evolution of the spray and therefore the structure of the liquid jet are affected much by relative velocity and the local volume fraction of liquid phase.

Growth of large-area atomically thin MoS2 film via ambient pressure chemical vapor deposition

Atomically thin MoS2 films have attracted significant attention due to excellent electrical and optical properties.The development of device applications demands the production of large-area thin film which is still an obstacle.In this work we developed a facile method to directly grow large-area MoS2 thin film on Si O2 substrate via ambient pressure chemical vapor deposition method. The characterizations by spectroscopy and electron microscopy reveal that the as-grown MoS2 film is mainly bilayer and trilayer with high quality. Back-gate field-effect transistor based on such MoS2 thin film shows carrier mobility up to 3.4 cm2V-1s-1 and on/off ratio of 105. The large-area atomically thin MoS2 prepared in this work has the potential for wide optoelectronic and photonic device applications.