Design and implementation of a personal computer (PC) based measurement circuits & system that containing signals’ sensing and generation are demonstrated in this study. The instrument can be easily operated via ...Design and implementation of a personal computer (PC) based measurement circuits & system that containing signals’ sensing and generation are demonstrated in this study. The instrument can be easily operated via a user-friendly interface consisted of some functional keys displayed on the PC screen. Compact design of the hardware for the two units (signals’ sensing and generation) is made in a plug-in style of PC input/output (I/O) card so that no extra space for the instrument is needed. Design concepts for the hardware and software of the instrument are described. Functional performances of the setup of signals’ sensing and generation are tested. The results show user-friendly function and well-behaved performance for the package design.展开更多
In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible t...In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible traps and defects induced by ions implantation in the gate-oxide and their further impacting on the sensitivity and dose range of RADFETs were analyzed qualitatively. Our devices had the dry/wet/dry sandwich gate-oxide of 420 nm thick. Different ion-implanting doses and post-annealing temperatures were carried out during the RADFETs fabrication. We built a real time auto-measurement system to realize the auto-state-switch between irradiation and read-out modes, and in-situ measurement of output voltage for ten devices in turn at once of radiation experiment. The threshold voltage, dose range and sensitivity of RADFETs were extracted and analyzed in detail. The results showed that the highest sensitivity of 229 mV/Gy achieved when the implant dose was2.2×1011 cm.2 and the post-annealing temperature was 1000°C, and the dose range of 34 Gy as well.展开更多
文摘Design and implementation of a personal computer (PC) based measurement circuits & system that containing signals’ sensing and generation are demonstrated in this study. The instrument can be easily operated via a user-friendly interface consisted of some functional keys displayed on the PC screen. Compact design of the hardware for the two units (signals’ sensing and generation) is made in a plug-in style of PC input/output (I/O) card so that no extra space for the instrument is needed. Design concepts for the hardware and software of the instrument are described. Functional performances of the setup of signals’ sensing and generation are tested. The results show user-friendly function and well-behaved performance for the package design.
基金supported by the National Basic Research Program of China(Grant No.2015CB352100)
文摘In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible traps and defects induced by ions implantation in the gate-oxide and their further impacting on the sensitivity and dose range of RADFETs were analyzed qualitatively. Our devices had the dry/wet/dry sandwich gate-oxide of 420 nm thick. Different ion-implanting doses and post-annealing temperatures were carried out during the RADFETs fabrication. We built a real time auto-measurement system to realize the auto-state-switch between irradiation and read-out modes, and in-situ measurement of output voltage for ten devices in turn at once of radiation experiment. The threshold voltage, dose range and sensitivity of RADFETs were extracted and analyzed in detail. The results showed that the highest sensitivity of 229 mV/Gy achieved when the implant dose was2.2×1011 cm.2 and the post-annealing temperature was 1000°C, and the dose range of 34 Gy as well.
