Ga_(2)O_(3)-based avalanche photodetectors(APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga_(2)O...Ga_(2)O_(3)-based avalanche photodetectors(APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga_(2)O_(3) with p-type semiconductor remains an open challenge associated with the integration difficulty on alleviating its defects and dislocations. Herein,we construct an APD consisting of epitaxial β-Ga_(2)O_(3)/La_(0.8)Ca_(0.2)MnO_(3) heterostructure. The pn junction APDs exhibit a high responsivity of 568 A/W as well as an enhanced avalanche gain of up to 3.0 × 10~5 at a reverse bias voltage of 37.9 V. The integration capability demonstrated in this work provides exciting opportunities for further development of high-performance Ga_(2)O_(3)-based electronics and optoelectronics.展开更多
基金supported by the National Natural Science Foundation of China (Nos. 12074044, 11874230, 52233014, and 12274243)the Fund of State Key Laboratory of Information Photonics and Optical Communications (No. IPOC2021ZT05)the Fundamental Research Funds for the Central Universities (BUPT)。
文摘Ga_(2)O_(3)-based avalanche photodetectors(APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga_(2)O_(3) with p-type semiconductor remains an open challenge associated with the integration difficulty on alleviating its defects and dislocations. Herein,we construct an APD consisting of epitaxial β-Ga_(2)O_(3)/La_(0.8)Ca_(0.2)MnO_(3) heterostructure. The pn junction APDs exhibit a high responsivity of 568 A/W as well as an enhanced avalanche gain of up to 3.0 × 10~5 at a reverse bias voltage of 37.9 V. The integration capability demonstrated in this work provides exciting opportunities for further development of high-performance Ga_(2)O_(3)-based electronics and optoelectronics.
