A new model is developed to study the microwave/mm wave characteristics of two-terminal GaNbased transfer electron devices（TEDs）,namely a Gunn diode and an impact avalanche transit time（IMPATT） device.Microwave ch...A new model is developed to study the microwave/mm wave characteristics of two-terminal GaNbased transfer electron devices（TEDs）,namely a Gunn diode and an impact avalanche transit time（IMPATT） device.Microwave characteristics such as device efficiency and the microwave power generated are computed and compared at D-band（140 GHz center frequency） to see the potentiality of each device under the same operating conditions.It is seen that GaN-based IMPATT devices surpass the Gunn diode in the said frequency region.展开更多
基金Project supported by the Department of Science and TechnologyGovernment of India through SERC,FIST and TIFAC Program
文摘A new model is developed to study the microwave/mm wave characteristics of two-terminal GaNbased transfer electron devices（TEDs）,namely a Gunn diode and an impact avalanche transit time（IMPATT） device.Microwave characteristics such as device efficiency and the microwave power generated are computed and compared at D-band（140 GHz center frequency） to see the potentiality of each device under the same operating conditions.It is seen that GaN-based IMPATT devices surpass the Gunn diode in the said frequency region.
