Structural feature and electronic property of an (8, 0) carbon-silicon carbide nanotube heterojunction

A supercell of a nanotube heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） is established, in which 96 C atoms and 32 Si atoms are included. The geometry optimization and the electronic property of the heterojunction are implemented through the first-principles calculation based on the density functional theory （DFT）. The results indicate that the structural rearrangement takes place mainly on the interface and the energy gap of the heterojunction is 0.31 eV, which is narrower than those of the isolated CNT and the isolated SiCNT. By using the average bond energy method, the valence band offset and the conduction band offset are obtained as 0.71 and -0.03 eV, respectively.

Valence offsets of ternary alloy heterojunctions In_xGa_(1-x)As/In_xAl_(1-x)As

The ternary alloy heterojunctions InxGa1-xAs/InxAl1-xAs are important materialswhich have been widely used in microwave and photoelectric devices.The alloy hetero-junctions InxGa1-xAs/InxAl1-xAs（x=0.3）have great potential use in high electron mobili-ty transistors（HEMTs）,heterostructure insulated-gate FFTs（HIGFETs）and resonant tun-neling diodes（RTDs）.When x rises to 0.53,InxGa1-xAs/InxAl1-xAs can be widely used inthe high-speed electronic devices.The valence-band offset（the value of ΔEv