利用AMPS程序模拟研究了非晶硅锗薄膜太阳电池的窗口层材料和厚度以及背接触势垒对电池光伏性能的影响。模拟发现带隙为1.92 e V的非晶硅碳更适合作为太阳电池的窗口层,且窗口层越薄电池的性能越好。模拟还发现,背接触势垒越低,则电池...利用AMPS程序模拟研究了非晶硅锗薄膜太阳电池的窗口层材料和厚度以及背接触势垒对电池光伏性能的影响。模拟发现带隙为1.92 e V的非晶硅碳更适合作为太阳电池的窗口层,且窗口层越薄电池的性能越好。模拟还发现,背接触势垒越低,则电池的光伏性能越好,当背接触势垒在0.11-0.51 e V的范围内时电池的转换效率不会受到背接触势垒的影响。展开更多
The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated ...The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, lnGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance gm of 1050 mS/mm, current gain cut-off frequency f of 350 GHz and power gain cut-off frequency fmax of 340 GHz. At room temperature the measured carrier mobility （μ）, sheet charge carrier density （ns） and breakdown voltage are 1580 cm2/（V.s）, 1.9× 1013 cm-2, and 10.7 V respectively. The superla- tives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.展开更多
文摘利用AMPS程序模拟研究了非晶硅锗薄膜太阳电池的窗口层材料和厚度以及背接触势垒对电池光伏性能的影响。模拟发现带隙为1.92 e V的非晶硅碳更适合作为太阳电池的窗口层,且窗口层越薄电池的性能越好。模拟还发现,背接触势垒越低,则电池的光伏性能越好,当背接触势垒在0.11-0.51 e V的范围内时电池的转换效率不会受到背接触势垒的影响。
文摘The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, lnGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance gm of 1050 mS/mm, current gain cut-off frequency f of 350 GHz and power gain cut-off frequency fmax of 340 GHz. At room temperature the measured carrier mobility （μ）, sheet charge carrier density （ns） and breakdown voltage are 1580 cm2/（V.s）, 1.9× 1013 cm-2, and 10.7 V respectively. The superla- tives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.
