In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field(B-LBSF) was successfully fabricated in this work. Through boron dopin...In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field(B-LBSF) was successfully fabricated in this work. Through boron doping in the LBSF, much higher doping concentration was observed for the B-LBSF over the Al-LBSF. Higher doping concentration in the LBSF is expected to lead to better rear passivation and lower rear contact resistance. Based on one thousand pieces of solar cells for each type, it was found that the rear passivated crystalline silicon solar cells with B-LBSF showed statistical improvement in their photovoltaic properties over those with Al-LBSF.展开更多
In order to investigate the effects of a back surface field(BSF) on the performance of a p-doped amorphous silicon(p-a-Si:H)/n-doped crystalline silicon(n-c-Si) solar cell,a heterojunction solar cell with a p-a...In order to investigate the effects of a back surface field(BSF) on the performance of a p-doped amorphous silicon(p-a-Si:H)/n-doped crystalline silicon(n-c-Si) solar cell,a heterojunction solar cell with a p-a-Si:H/n-c-Si/n^+-a-Si:H structure was designed.An n^+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si:H/n-c-Si/n^+-a-Si:H solar cells were simulated.It was shown that the BSF of the p-a-Si:H/n-c-Si/n^+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states.展开更多
GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition(MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizin...GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition(MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizing of cell performance, especially the interface between base layer and back surface field(BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of Vocin GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells.展开更多
Different processes are used on the back surface of silicon wafers to form cells falling into three groups:textured, planar, and sawed-off pyramid back surface.The characteristic parameters of the cells, ISC, VOC, FF...Different processes are used on the back surface of silicon wafers to form cells falling into three groups:textured, planar, and sawed-off pyramid back surface.The characteristic parameters of the cells, ISC, VOC, FF, Pm, and Eff, are measured.All these parameters of the planar back surface cells are the best.The FF, Pm, and Eff of sawed-off pyramid back surface cells are superior to textured back surface cells, although ISC and VOC are lower.The parasitic resistance is analyzed to explain the higher FF of the sawed-off pyramid back surface cells.The cross-section scanning electron microscopy(SEM) pictures show the uniformity of the aluminum-silicon alloy, which has an important effect on the back surface recombination velocity and the ohmic contact.The measured value of the aluminum back surface field thickness in the SEM picture is in good agreement with the theoretical value deduced from the Al-Si phase diagram.It is shown in an external quantum efficiency(EQE) diagram that the planar back surface has the best response to a wavelength between 440 and 1000 nm and the sawed-off back surface has a better long wavelength response.展开更多
基金Funded by the National Natural Science Foundation of China(61366004)the Research Fund for the Doctoral Program of Higher Education(20123601110006)the Jiangxi Provincial Department of Education(KJLD13008)
文摘In order to enhance the p-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field(B-LBSF) was successfully fabricated in this work. Through boron doping in the LBSF, much higher doping concentration was observed for the B-LBSF over the Al-LBSF. Higher doping concentration in the LBSF is expected to lead to better rear passivation and lower rear contact resistance. Based on one thousand pieces of solar cells for each type, it was found that the rear passivated crystalline silicon solar cells with B-LBSF showed statistical improvement in their photovoltaic properties over those with Al-LBSF.
基金supported by the Natural Science Foundation of Jiangxi Province, China (Nos.0612025, 2007GZW0787)the Education Bureau of Jiangxi Province, China (No. [2007]218)
文摘In order to investigate the effects of a back surface field(BSF) on the performance of a p-doped amorphous silicon(p-a-Si:H)/n-doped crystalline silicon(n-c-Si) solar cell,a heterojunction solar cell with a p-a-Si:H/n-c-Si/n^+-a-Si:H structure was designed.An n^+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si:H/n-c-Si/n^+-a-Si:H solar cells were simulated.It was shown that the BSF of the p-a-Si:H/n-c-Si/n^+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states.
基金Project supported by the National Natural Science Foundation of China (No. 61474076)
文摘GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition(MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizing of cell performance, especially the interface between base layer and back surface field(BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of Vocin GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells.
文摘Different processes are used on the back surface of silicon wafers to form cells falling into three groups:textured, planar, and sawed-off pyramid back surface.The characteristic parameters of the cells, ISC, VOC, FF, Pm, and Eff, are measured.All these parameters of the planar back surface cells are the best.The FF, Pm, and Eff of sawed-off pyramid back surface cells are superior to textured back surface cells, although ISC and VOC are lower.The parasitic resistance is analyzed to explain the higher FF of the sawed-off pyramid back surface cells.The cross-section scanning electron microscopy(SEM) pictures show the uniformity of the aluminum-silicon alloy, which has an important effect on the back surface recombination velocity and the ohmic contact.The measured value of the aluminum back surface field thickness in the SEM picture is in good agreement with the theoretical value deduced from the Al-Si phase diagram.It is shown in an external quantum efficiency(EQE) diagram that the planar back surface has the best response to a wavelength between 440 and 1000 nm and the sawed-off back surface has a better long wavelength response.