A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions

We present the design of a wide-band low-noise amplifier （LNA） implemented in 0.35μm SiGe BiCMOS technology for cable and terrestrial tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1 ～ 1GHz wide bandwidth and 18. 8dB gain with less than 1.4dB of gain variation. The noise figure of the wideband LNA is 5dB, and its 1dB compression point is - 2dBm and IIP3 is 8dBm. The LNA dissipates 120mW of power with a 5V supply.

Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz

A 0.18 μm CMOS low noise amplifier(LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 μm 9226 μm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB,respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multistandard low-cost receiver front-ends within the above frequency range.

A High Efficiency Doherty Power Amplifier for TV Band Applications

This paper presents a high efficiency Doherty power amplifier suitable for TV band applications. A class AB power amplifier is firstly implemented using a commercial GaN HEMT from Cree Incorporation, achieving a high power-added-efficiency of 77.78% and a 40.593 dBm output power with an associated gain of 21.65 dB. The Doherty amplifier has then been designed following the previous class AB scheme for the main amplifier and a class C scheme for the peak one. This amplifier attained a high power-added-efficiency of 81.94%, a 42.77 dBm output power, an associated gain of 21.32 dB, and an operating frequency bandwidth between 550 and 1000 MHz (58.06% fractional bandwidth) which made it suitable for TV band applications.

An S-band solid-state radio frequency power amplifier used at Shanghai soft X-ray FEL facility

In this paper,we present the general design methods and parameter measurements of a 1-k W solidstate radio frequency(RF) power amplifier at 2856 MHz,for the soft X-ray free electron laser facility.Three-stage amplification with a 4-way combination is used.An RF switch module is integrated with the solid-state RF power amplifier to convert the continuous wave(CW) signal into pulse signal,with adjustable pulse width.The power gain is measured at 57.7 d B at 60 d Bm output.The RF phase noise,which is measured by the low-level RF system,is\0.015 degree(RMS),while the pulse frontier jitter is\5 ns.

X-Band Power Amplifier for Next Generation Networks Based on MESFET

Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor(MESFET) based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get MESFET input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about-22.3d B and-23.716 d B achieving a high gain of about25.6 d B respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894 d Bm of output power.

NONLINEAR CHARACTERIZATION OF CONCURRENT DUAL-BAND RF POWER AMPLIFIERS

In this paper, the synchronous concurrent dual-band RF signal is used to drive the RF Power Amplifier (PA). The nonlinear characterization of a concurrent dual-band RF PA is discussed while two band signals in the dual-band are modulated by CDMA2000 and WCDMA signals. When the two band signals in the dual-band of the PA are modulated with the same signals, it is found that the nonlinearity of the PA can be expressed by any of the two corresponding baseband data. On the other hand, when the two band signals in the dual-band of the PA are modulated with two different signals, the PA nonlinearity cannot be characterized by any of the two corresponding baseband data. In this case, its nonlinearity has to be denoted by a composite signals consisting of the two baseband signals. Consequently, the requirements for the speed of the A/D converter can be largely reduced. The experimental results with CDMA2000 and WCDMA signals demonstrate the speed of the A/D converter required is only 30 M Sample Per Second (SaPS), but it will be at least 70 M SaPS for the conventional method.

X-band inverse class-F GaN internally-matched power amplifier

An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.

VHF频段小型化千瓦级GaN功率放大器

为了满足VHF频段对高功率放大器小型化的需求,设计并制备了一款基于05μm GaN高电子迁移率晶体管(HEMT)工艺的VHF频段小型化千瓦级功率放大器。通过采用多节微带电容网络和高介电常数的印制电路板(PCB)实现了末级功率放大器匹配电路的小型化;以高通滤波器作为级间匹配电路,在减小电路尺寸的同时,提高了链路增益;采用混合集成工艺,实现了电源调制器、前级驱动功率放大器和末级功率放大器等各单元的小型化高密度集成。测试结果表明,在024~030 GHz频带内,该功率放大器的工作电压为50 V,工作脉宽为100μs,在占空比10%、输入功率10 dBm的工作条件下,带内输出功率大于1000 W,功率附加效率约为60%~69%,功率增益大于50 dB,功放体积为46 mm×30 mm×6 mm。

无线传感节点中频域传输信号解调与控制方法

为提高无线传感网络节点中的频域传输信号抗噪能力,优化前端镜像与噪声信号处理能力,以无线传感节点中的频域传输信号为研究对象,提出一种新的信号控制与解调方法。将无线传感信号输入设计的滤波器中,通过电容器、电阻、运算放大器相互协作完成信号滤波。引入前馈补偿通路组建两级节点信号解调线路,当输出传感信号功率超过标准,便可根据超出值,以前馈补偿的方式调节增益带宽积实现解调。在传感节点中外接一个校正电路,以校正电容调节码的方式,控制传感信号频域传输特性满足正常运行标准。仿真结果表明:在1 V的电源电压下,此滤波器中心频率为2 MHz,邻近信号抑制为55 dB,镜像信号抑制为33 dB,带内纹波为0.1 dB,通带电压增益为18 dB,工作电流为382μA。验证了所提方法具有较高的频域传输信号深度处理能力,且有助于实现无线传感网络高质量通信。

一种用于反无人机设备的三频段功率放大器

在现有双频匹配理论的基础上,设计了一种可同时工作在1.5/2.4/5.8 GHz三个频段的射频功率放大器。为满足对抗无人机的实际应用需求,首先匹配2.4 GHz和5.8 GHz两个频率,然后匹配1.5 GHz,并设计相应的三频段输入输出匹配网络,完成了三频段功率放大器整体电路的设计。ADS仿真结果表明,当输入功率为28 dBm时,在三个频段设计的射频功率放大器的输出功率分别为39.88 dBm、40.94 dBm和39.25 dBm,效率分别达到了46.52%、60.54%和39.40%。该功率放大器可应用在基于信号抑制或信号欺骗的反制无人机设备中,提升放大器效率与设备集成度。

X波段GaAs MMIC低噪声放大器设计研究

文章针对雷达和卫星通信等微波系统需求,设计一种X波段GaAs单片微波集成电路(Monolithic Microwave Integrated Circuit,MMIC)低噪声放大器。该电路为两级放大器级联结构,采用自偏置电路结构,实现单电源3.5 V供电。通过电感峰化和宽带匹配等技术实现X波段的工作频率全覆盖,并实现较低的噪声系数。测试结果表明,在8~12 GHz频率范围内,低噪声放大器功率增益大于23 dB,噪声系数小于1.7 dB,输出1 dB压缩点功率大于13 dBm。

油气管道VSAT卫星链路计算方法研究

为了解决VSAT卫星链路完全依靠卫星厂家进行计算且无法核对厂家提供的数据是否正确的问题,针对VSAT卫星链路计算的可靠性和健壮性,提出了一种油气管道VSAT卫星链路计算方法。该方法采用“功带平衡”算法,将VSAT卫星链路的带宽占用比等同于功率占用比,计算出卫星转发器最大输出功率,进而计算等效功率密度,根据每载波占用卫星的ERIP值公式,计算出饱和通量密度,匹配出卫星天线尺寸及功放矩阵,根据匹配的卫星天线及功放计算VSAT卫星链路总载噪比,将VSAT卫星链路总载噪比和系统最低载噪比进行对比,VSAT卫星链路总载噪比大者为合适的卫星天线及功放,反之为不合适选项,用推算出的卫星天线及功放推算出功率占用比,功率占用比与带宽占用比差别较大时,需调整卫星天线及功放的选择,计算功率占用比,直到卫星天线及功放达到功率占用比等于带宽占用比,即为最优的卫星天线和功放。通过最终的计算可得出卫星天线与功放的匹配矩阵,在实际工程中需从中选取合适的卫星天线与功放中的最小值达到最经济、可靠的匹配。该计算方法通过软件编程进行了界面可视化显示,并在诸多工程中进行了详细验证,结果表明此方法准确可靠,很好地提升了VSAT卫星链路计算的可靠性和健壮性。

基于0.1-μm GaAs pHEMT工艺的最小噪声系数3.9 dB的66~112.5 GHz低噪声放大器

本文基于0.1-μm砷化镓赝配高电子迁移率晶体管(GaAs pHEMT)工艺,研制了一款覆盖整个W波段的宽带低噪声放大器。提出了一种由双并联电容组成的旁路电路,能够提供宽带射频接地,减小了级间串扰,利于实现宽带匹配。采用双谐振匹配网络实现了宽带的输入匹配和最佳噪声匹配。实测结果显示,最大增益在108 GHz处达到20.4 dB,在66~112.5 GHz范围内,小信号增益为16.9~20.4 dB。在90 GHz处,实测噪声系数为3.9 dB。实测的输入1-dB压缩点在整个W波段内约为-12 dBm。

由Giles模型对L-band EDFA的理论分析

本文通过运用Giles模型对L bandEDFA在不同泵浦波长下的增益、不同泵浦功率与光纤长度的关系以及各种增益特性等进行了数值模拟 ,并同时辅以C bandEDFA进行比较计算 ,从理论上对L bandEDFA的特性进行了较为详细的分析说明 。

Ku波段800 W氮化镓高线性固态功放研制

介绍了一种Ku波段800 W氮化镓(GaN)高线性度固态功放的工程实现。使用32片GaN功率芯片,采用微带Gysel功分器与波导功分/合成网络相结合的方式进行功率合成,功放在750 MHz的工作频带内连续波饱和输出功率大于850 W。采用射频预失真线性化技术优化氮化镓功放线性度,功放三阶互调指标改善幅度大于5 dB,优于-32 dBc。功放选择带热管的翅片散热器的强制风冷方案,提高了散热器的换热效率,散热性能良好。通过实时监测功放芯片管壳温度,自动配置散热风扇转速,实现了功放的自适应热管理,在降低功放功耗的同时,减小了产品噪声。功放配置了完善的控保功能,技术状态稳定。由两台功放组成了1备1组件系统,可靠性及实用性满足工程使用要求,适用于测控、通信、广电等领域的微波发射系统。

C波段2000 W氮化镓线性固态功放研制

介绍了一种C波段2000 W氮化镓高功率线性固态功放的工程实现。使用32片GaN功率管芯芯片,采用微带Gysel功分器与波导功分/合成网络相结合的方式进行功率合成,功放在900 MHz的工作频带内连续波饱和输出功率大于2000 W,最大输出功率2290 W。采用射频预失真线性化技术优化氮化镓功放线性度,功放三阶互调指标改善幅度大于4 dB,优于-29 dBc。选择带热管的翅片散热器的强制风冷方案,提高散热器的换热效率,散热性能良好。功放配置了完善的控保功能,可靠性及实用性满足工程使用要求。功放插箱和电源模块采用热插拔设计,便于快速维修,适用于测控、通信、广电等领域的微波发射系统。

全国产化微弱信号调理电路

为更好地处理微弱信号,提出一种新型的多通道信号前端调理模块。该模块不仅具有可编程增益功能,而且还整合了带通滤波器。在保证高输入阻抗和低噪声等关键性能的同时,提出一种全面而创新的调理模块设计方案。该方案的核心是采用可编程增益放大电路,显著提高了模块在放大各类微弱信号时的适应性。此外,利用HC595系列芯片,实现了对增益的精确调控。该放大电路具备26 dB的固定增益和0~84 dB的可调增益范围,工作带宽设定在380~420 kHz。经过系统性能测试,结果表明该调理电路成功满足了设计目标的各项要求。

L-Band掺铒光纤放大器的优化设计

提出了泵浦分配两段级联 ,并利用前向ASE推动下一级EDF工作的L Band放大器的新结构 基于Giles模型并考虑了ASE噪声的影响 ,运用数值模拟算法系统分析了泵浦光功率分配和铒光纤分配比例对这种EDFA性能的影响 最后优化得到高增益且增益谱平坦的L BandEDFA ,其在输入信号光功率为 - 2 0dBm时 ,在 15 71～ 16 0 8nm范围内 ,增益值高达 35dB ,增益偏差小于

Ka波段连续波9 W GaN功率放大器

本文研制了一款采用0.15μm碳化硅基氮化镓功率MMIC工艺的Ka波段连续波功率放大器芯片。功率放大器采用了3级共源级联结构。输出级采用了16个晶体管进行功率合成,有效地分散了热分布,输出匹配网络采用低损耗拓扑架构,保证了输出功率与附加效率。级间匹配采用了最大增益匹配,同时兼顾了小信号增益平坦度。在28 GHz~30 GHz内,小信号增益为25 dB,28 V偏置电压下连续波输出功率大于39 dBm,功率增益为17 dB,附加效率大于25%,热阻为1.41℃/W。输出功率为35 dBm时,IMD 3小于-25 dBc,芯片面积为3.0 mm×3.1 mm。

L-band EDFA性能与增益光纤长度关系的分析

分析和模拟L_band EDFA的增益特性对其优化设计和实验有着重要的意义。基于Giles模型,数值模拟了L_band EDFA中的信号光、泵浦光和放大自发辐射(ASE)在一定泵浦功率下与铒光纤长度的关系;分析了L_band EDFA本征增益平坦的产生机理;数值模拟了小信号增益平坦特性。结果表明,在一定的泵浦功率下,如果在所选择的L_bandEDFA中铒光纤长度合适,则不需要任何平坦化处理就可以得到比较平坦的增益谱线。