Behavior of exciton in direct−indirect band gap Al_(x)Ga_(1−x)As crystal lattice quantum wells

Excitons have significant impacts on the properties of semiconductors.They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping.Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in Al_(x)Ga_(1−x)As semiconductor spherical quantum dots.The Al_(x)Ga_(1−x)As is considered to be a direct semiconductor at AI concentration below 0.45,and an indirect one at the concentration above 0.45.With regards to the former,the ground state binding energy increases and decreases with AI concentration and eigenfrequency,respectively;however,while the ground state energy increases with AI concentration,it is marginally influenced by eigenfrequency.On the other hand,considering the latter,while the ground state binding energy increases with AI concentration,it decreases with eigenfrequency;nevertheless,the ground state energy increases both with AI concentration and eigenfrequency.Hence,for the better practical performance of the semiconductors,the properties of the excitons are suggested to vary by adjusting AI concentration and eigenfrequency.

氢氟酸处理InP/GaP/ZnS量子点的光学性能及其发光二极管应用

采用氢氟酸(HF)原位注入法制备了InP/GaP/ZnS量子点。通过紫外/可见/近红外光谱、光致发光光谱、透射电镜、球差校正透射电镜、X射线衍射、X射线光电子能谱等测试手段分析了HF对InP量子点的发光性能影响。实验结果表明,HF刻蚀减少了量子点表面氧化缺陷状态,有效控制了InP核表面的氧化,并且原子配体形式的F-钝化了量子点表面的悬挂键,显著提升了量子点的光学性能。HF处理的InP/GaP/ZnS量子点具有最佳的发光性能,PLQY高达96%。此外,用HF处理InP/GaP/ZnS量子点制备的发光二极管,其发光的电流效率为6.63 cd/A,最佳外量子效率(EQE)为3.83%。

基于5GAP模型的高校食堂服务质量差距分析与对策探讨

食堂服务是高校后勤服务体系中最重要的环节之一,高校食堂管理必须要有的放矢地改进工作。5GAP模型是一种直接有效的服务环节分析工具,更注重找出内部的服务缺陷。在以往的高校食堂研究中,多以顾客满意度的外部视角分析服务质量问题,本文通过5GAP模型以内部视角分析发现引发高校食堂服务质量问题的根源,以期能对高校食堂服务质量的改进和提升起到一定作用。

Influence of Cu doping in Magnesium Hydroxide Nanoparticles for Bandgap Engineering

Cu doped Mg(OH)_(2) nanoparticles were synthesized with varying concentrations from 0 to 10%by a chemical synthesis technique of coprecipitation.X-rays diffraction (XRD) of the samples confirms that all the samples acquire the hexagonal crystal structure.XRD results indicated the solubility limit of dopant in the host material and the secondary phase of CuO was observed beyond 3%Cu doping in Mg(OH)_(2).The reduction in the size of nanoparticles was observed from 166 to 103 nm for Mg(OH)_(2) and 10% Cu doped Mg(OH)_(2)samples,respectively.The shift in absorption spectra exhibited the systematical enhancement in optical bandgap from 5.25 to 6.085 eV.A good correlation was observed between the bandgap energy and crystallite size of the nanocrystals which confirmed the size induced effect in the nanoparticles.The transformation in the sample morphology was observed from irregular spherical particles to sepals like shapes with increasing the Cu concentration in the host material.The energy dispersive X-Ray (EDX) analysis confirmed the purity of mass percentage composition of the elements present in the samples.

Machine learning of theΓ-point gap and flat bands of twisted bilayer graphene at arbitrary angles

The novel electronic properties of bilayer graphene can be fine-tuned via twisting,which may induce flat bands around the Fermi level with nontrivial topology.In general,the band structure of such twisted bilayer graphene(TBG)can be theoretically obtained by using first-principles calculations,tight-binding method,or continuum model,which are either computationally demanding or parameters dependent.In this work,by using the sure independence screening sparsifying operator method,we propose a physically interpretable three-dimensional(3D)descriptor which can be utilized to readily obtain theΓ-point gap of TBG at arbitrary twist angles and different interlayer spacings.The strong predictive power of the descriptor is demonstrated by a high Pearson coefficient of 99%for both the training and testing data.To go further,we adopt the neural network algorithm to accurately probe the flat bands of TBG at various twist angles,which can accelerate the study of strong correlation physics associated with such a fundamental characteristic,especially for those systems with a larger number of atoms in the unit cell.

Laser-assisted Simulation of Dose Rate Effects of Wide Band Gap Semiconductor Devices

Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.

共混GAP基含能热塑性弹性体的氢键行为与力学性能

为了改善GAP热塑性弹性体的力学性能,采用了DSC、低场核磁测试、静态力学测试和动态力学测试的方法对两种异氰酸酯固化的弹性体共混体系的氢键行为和力学性能进行分析,建立微观结构与宏观性能的关系。结果表明,由于分子结构原因,HMDI固化的GAP热塑性弹性体和IPDI固化的弹性体显示出不同的氢键行为和力学性能,通过物理共混得到了兼具抗拉强度及断裂延伸率的弹性体,50℃下抗拉强度高于1.5MPa,-40℃下延伸率不低于300%,相较于纯HMDI固化的弹性体,低温延伸率提升了约150%,IPDI固化的弹性体高温抗拉强度提升了约1.4MPa,说明通过共混可得到性能更为均衡的含能热塑性弹性体。

基于Roussouly分型的脊柱形态和GAP评分对成人脊柱畸形术后临床疗效的影响

目的评估成人脊柱畸形(ASD)手术前后的Roussouly矢状面脊柱形态及全脊柱序列比例(GAP)评分对术后临床疗效的影响。方法回顾性分析2016年1月至2021年12月在宁夏医科大学总医院行手术治疗的72例ASD患者临床资料,其中男性20例,女性52例,年龄(46.9±19.0)岁。将纳入患者按照“当前”[依据骶骨倾斜角(SS)]和“理论”[依据骨盆入射角(PI)]Roussouly分型脊柱形态进行划分。根据一个恒定参数(PI)判断出患者“理论”形态,然后将此种类型的理想形态参数与实际参数作对比,若术后3个月患者的“当前”Roussouly脊柱形态与其“理论”Roussouly脊柱形态各项参数均符合则归入匹配组,否则归入非匹配组。根据相关参数计算两组患者手术前后GAP评分,并收集术前、术后3个月和末次随访时的疼痛视觉模拟评分(VAS)、Oswestry功能障碍指数(ODI)及术前和末次随访时SRS-22评分(包括总分、疼痛、功能、自我形象、心理健康和治疗满意度),同时记录患者随访时机械并发症发生情况。比较两组患者的影像学参数、GAP评分、临床疗效评分及机械并发症中的差异。结果72例ASD患者术前以RoussoulyⅠ型和Ⅱ型脊柱形态为主,术后以RoussoulyⅡ型和Ⅲ型为主。所有患者术后影像学参数和临床疗效评分较术前均得到改善(P均<0.05)。组间比较,非匹配组末次随访骨盆倾斜角和躯干整体倾斜角大于匹配组(P均<0.05),术后3个月及末次随访,匹配组GAP评分均低于非匹配组(P均<0.05),匹配组较非匹配组在术后3个月和末次随访有更好的VAS评分、ODI评分及SRS-22评分(包括总分、疼痛、功能和治疗满意度)(P均<0.05)。匹配组术后机械并发症发生率更低(P<0.05),腰椎前凸顶点位于理想位置可降低机械并发症发生率。结论ASD术后脊柱矢状面匹配理想Roussouly分型的患者临床疗效和GAP评分更好、机械并发症发生率更低,PI术中应尽可能矫正至理想Roussouly分型脊柱形态。

LiF/GAP协同作用改善硼粉的燃烧性能

以氟化锂/缩水甘油叠氮化物聚合物(LiF/GAP)为界面层对微米硼进行改性,研究LiF/GAP协同作用对硼粉热行为、燃烧性能和凝聚相燃烧产物的影响。结果表明,通过硅烷偶联剂处理后,硼粉表面黏结性得以提高,LiF能够较好地包覆在硼粉表面;GAP在400℃之前抑制了LiF与硼表面氧化膜的反应,使LiF的除膜效应延后至硼粉氧化增重阶段,从而将更多的活性硼暴露在空气中发生氧化,促进了硼粉的燃烧;LiF和GAP协同作用显著改善了硼粉的燃烧性能,尤其当LiF和GAP质量分数均为10%时,作用效果最为明显。此外,LiF和GAP协同作用有效抑制了燃烧过程中硼粉团聚,使其凝聚相燃烧产物粒径降低。

Influence of Defect Density, Band Gap Discontinuity and Electron Mobility on the Performance of Perovskite Solar Cells

In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 1016 cm-3 all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance.

Interface-induced topological phase and doping-modulated bandgap of two-dimensioanl graphene-like networks

Biphenylene is a new topological material that has attracted much attention recently.By amplifying its size of unit cell,we construct a series of planar structures as homogeneous carbon allotropes in the form of polyphenylene networks.We first use the low-energy effective model to prove the topological three periodicity for these allotropes.Then,through first-principles calculations,we show that the topological phase has the Dirac point.As the size of per unit cell increases,the influence of the quaternary rings decreases,leading to a reduction in the anisotropy of the system,and the Dirac cone undergoes a transition from type II to type I.We confirm that there are two kinds of non-trivial topological phases with gapless and gapped bulk dispersion.Furthermore,we add a built-in electric field to the gapless system by doping with B and N atoms,which opens a gap for the bulk dispersion.Finally,by manipulating the built-in electric field,the dispersion relations of the edge modes will be transformed into a linear type.These findings provide a hopeful approach for designing the topological carbon-based materials with controllable properties of edge states.

GAP/N-100交联体系力学和热解机理的MD模拟

为探究聚叠氮缩水甘油醚(GAP)与多异氰酸酯(N-100)交联形成三维网状聚合物的力学性能、热分解机理和主要产物信息,采用perl语言结合分子动力学模拟软件编写了能实现GAP与N-100交联的脚本,建立了不同交联度的GAP/N-100分子模型,并预测了不同交联体系的力学性能,采用反应分子动力学对热解机理和产物进行了模拟。结果表明:通过自编脚本可以得到一系列不同交联度的交联模型,最终交联度为96.7%;随着交联度的增大,GAP/N-100体系的杨氏模量、剪切模量和体积模量均逐渐提高。GAP/N-100交联体系热解的初始分解机理为叠氮基团的脱落以及碳骨架的分解,热解反应的活化能Ea为13.411 kJ/mol,指前因子A为0.099 1/ps-1,热解的主要产物有N2、H_(2)、H_(2)O以及NH3,主要的中间产物为CH_(2)O。

Failure transition of shear-to-dilation band of rock salt under triaxial stresses

Great potential of underground gas/energy storage in salt caverns seems to be a promising solution to support renewable energy.In the underground storage method,the operating cycle unfortunately may reach up to daily or even hourly,which generates complicated pressures on the salt cavern.Furthermore,the mechanical behavior of rock salt may change and present distinct failure characteristics under different stress states,which affects the performance of salt cavern during the time period of full service.To reproduce a similar loading condition on the cavern surrounding rock mass,the cyclic triaxial loading/unloading tests are performed on the rock salt to explore the mechanical transition behavior and failure characteristics under different confinement.Experimental results show that the rock salt samples pre-sent a diffused shear failure band with significant bulges at certain locations in low confining pressure conditions(e.g.5 MPa,10 MPa and 15 MPa),which is closely related to crystal misorientation and grain boundary sliding.Under the elevated confinement(e.g.20 MPa,30 MPa and 40 MPa),the dilation band dominates the failure mechanism,where the large-size halite crystals are crushed to be smaller size and new pores are developing.The failure transition mechanism revealed in the paper provides additional insight into the mechanical performance of salt caverns influenced by complicated stress states.

Layered kagome compound Na_(2)Ni_(3)S_(4)with topological flat band

We report structural and electronic properties of Na_(2)Ni_(3)S_(4),a quasi-two-dimensional compound composed of alternating layers of[Ni_(3)S_(4)]^(2-)and Na^(+).The compound features a remarkable Ni-based kagome lattice with a square planar configuration of four surrounding S atoms for each Ni atom.Magnetization and electrical measurements reveal a weak paramagnetic insulator with a gap of about 0.5 eV.Our band structure calculation highlights a set of topological flat bands of the kagome lattice derived from the rotated dxz-orbital with C_(3)+T symmetry in the presence of crystal-field splitting.

Band structures of strained kagome lattices

Materials with kagome lattices have attracted significant research attention due to their nontrivial features in energy bands.We theoretically investigate the evolution of electronic band structures of kagome lattices in response to uniaxial strain using both a tight-binding model and an antidot model based on a periodic muffin-tin potential.It is found that the Dirac points move with applied strain.Furthermore,the flat band of unstrained kagome lattices is found to develop into a highly anisotropic shape under a stretching strain along y direction,forming a partially flat band with a region dispersionless along ky direction while dispersive along kx direction.Our results shed light on the possibility of engineering the electronic band structures of kagome materials by mechanical strain.

Observation of flat-band localized state in a one-dimensional diamond momentum lattice of ultracold atoms

We investigated the one-dimensional diamond ladder in the momentum lattice platform. By inducing multiple twoand four-photon Bragg scatterings among specific momentum states, we achieved a flat band system based on the diamond model, precisely controlling the coupling strength and phase between individual lattice sites. Utilizing two lattice sites couplings, we generated a compact localized state associated with the flat band, which remained localized throughout the entire time evolution. We successfully realized the continuous shift of flat bands by adjusting the corresponding nearest neighbor hopping strength, enabling us to observe the complete localization process. This opens avenues for further exploration of more complex properties within flat-band systems, including investigating the robustness of flat-band localized states in disordered flat-band systems and exploring many-body localization in interacting flat-band systems.

Analysis of Light Load Efficiency Characteristics of a Dual Active Bridge Converter Using Wide Band-Gap Devices

In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (Co,tr) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low Co,tr operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.

Spin gap in quasi-one-dimensional S=3/2 antiferromagnet CoTi2O5

Quasi-one-dimensional(1D)antiferromagnets are known to display intriguing phenomena especially when there is a spin gap in their spin-excitation spectra.Here we demonstrate that a spin gap exists in the quasi-1D Heisenberg antiferromagnet CoTi2O5 with highly ordered Co2+/Ti4+occupation,in which the Co2+ions with S=3/2 form a 1D spin chain along the a-axis.CoTi2O5 undergoes an antiferromagnetic transition at TN~24 K and exhibits obvious anisotropic magnetic susceptibility even in the paramagnetic region.Although a gapless magnetic ground state is usually expected in a quasi-1D Heisenberg antiferromagnet with half-integer spins,by analyzing the specific heat,the thermal conductivity,and the spin-lattice relaxation rate(1/T1)as a function of temperature,we found that a spin gap is opened in the spin-excitation spectrum of CoTi2O5 around TN,manifested by the rapid decrease of magnetic specific heat to zero,the double-peak characteristic in thermal conductivity,and the exponential decay of 1/T1 below TN.Both the magnetic measurements and the first-principles calculations results indicate that there is spin-orbit coupling in CoTi2O5,which induces the magnetic anisotropy in CoTi2O5,and then opens the spin gap at low temperature.

Amniotic Band Syndrome at the Van Norman Clinic in Burundi: A Case Series

Amniotic band syndrome is an acquired embryo-fetopathy. It is rare and is characterized by malformations mainly affecting the limbs but also the skull, face and thoraco-abdominal axis. Its etiopathogenesis remains poorly understood. Its diagnosis is essentially clinical and is classically based on the existence of signs such as furrows, amputations and pseudosyndactyly. To show the importance of antenatal diagnosis in resource-limited countries, we report the case of two newborns, one premature at 31 weeks and the other at term, in whom amniotic band syndrome was discovered incidentally at birth. It involved an amputation of the right leg for both cases. The premature baby was born in a context of neonatal sepsis and will succumb to the latter while the 2nd case was released from the hospital alive. Imaging examinations to search for probable congenital malformations could only be carried out for the 2nd case and no accessible congenital malformation had been identified. And as management of the disease, only psychological support to the parents was provided for the 2 cases. The antenatal discovery of a case of amniotic band syndrome in countries with low technical capacity such as Burundi should push clinicians to think in time about treatment options.

The Diagnostic Value of Oligoclonal Band Detection in Viral Encephalitis

Objective: This study aims to explore the differences in cerebrospinal fluid oligoclonal band (CSF-OCB) expression among different age groups in viral encephalitis and its reference value for diagnosis. Methods: Forty-two patients with viral encephalitis were divided into two groups: 25 adults and 17 children. The presence of oligoclonal bands in the cerebrospinal fluid (CSF) was detected using polyacrylamide gel electrophoresis, and CSF routine analysis was conducted for comparative analysis. Results: The CSF-OCB positivity rate was higher in the adult group (48%) compared with the pediatric group (11.76%), with a statistically significant difference (P Conclusion: 1) The expression of CSF-OCB positivity in patients with viral encephalitis is age-related, with higher positivity rates observed in adults compared to children. 2) Although CSF oligoclonal band detection is not a specific diagnostic marker for viral encephalitis in adults, it still holds certain reference value.