We use the two lowest weight states to fit E2 strengths connecting the 0←→2 and 2←→4 transitions in ^(96,98)Mo.Our results confirm that the 2^+ and 4^+ states are maximally mixed,and that the 0^+ states are weakly...We use the two lowest weight states to fit E2 strengths connecting the 0←→2 and 2←→4 transitions in ^(96,98)Mo.Our results confirm that the 2^+ and 4^+ states are maximally mixed,and that the 0^+ states are weakly mixed in both nuclei.An appropriate Hamiltonian to represent the band mixing is found to be exactly solvable,and its eigenstates can be expressed as the basis vectors in the configuration mixing scheme and interacting boson model.The interacting boson model and coexistence mixing configuration under the solvable methods are suitable models for analyzing the band mixing with high accuracy.展开更多
Electromechanical property of a p-type single-crystal silicon nanoplate is modelled by a microscopic approach where the hole quantization effect and the spin-orbit coupling effect are taken into account. The visible a...Electromechanical property of a p-type single-crystal silicon nanoplate is modelled by a microscopic approach where the hole quantization effect and the spin-orbit coupling effect are taken into account. The visible anisotropic subband structures are calculated by solving self-consistently the stress-dependent 6×6 k.p Schrodinger equation with the Poisson equation. The strong mixing among heavy, light, and split-off holes is quantitatively assessed. The influences of the thickness and the temperature on the piezoresistive coefficient are quantitatively investigated by using the hole concentrations and the effective masses from the complex dispersion structure of the valence band with and without stresses. Our results show that the stress determines the extent to which the band is mixed. The hole quantization effect increases as the thickness decreases, and therefore the valence band is strongly reshaped, resulting in the size-dependent piezoresistivity of the silicon nanoplate. The piezoresistive coefficient increases almost 4 times as the thickness reduces from the bulk to 3 nm, exhibiting a promising application in mechanical sensors.展开更多
基金Supported by the National Natural Science Foundation of China(11875171,11675071,11747318)the U.S.National Science Foundation(OIA-1738287,ACI-1713690)+2 种基金U.S.Department of Enengy(DE-SC0005248)the Southeastem Univers ities Research Association,the China-U.S.Theory Institute for Physices with Exotie Nuclei(CUSTIPEN)(DE-SC0009971)and the LSU-LNNU joint research program(9961)。
文摘We use the two lowest weight states to fit E2 strengths connecting the 0←→2 and 2←→4 transitions in ^(96,98)Mo.Our results confirm that the 2^+ and 4^+ states are maximally mixed,and that the 0^+ states are weakly mixed in both nuclei.An appropriate Hamiltonian to represent the band mixing is found to be exactly solvable,and its eigenstates can be expressed as the basis vectors in the configuration mixing scheme and interacting boson model.The interacting boson model and coexistence mixing configuration under the solvable methods are suitable models for analyzing the band mixing with high accuracy.
基金Project supported by the National Basic Research Program of China (Grant No 2006CB300404)the National High-Technology Research and Development Program of China (Grant No 2007AA04Z301)
文摘Electromechanical property of a p-type single-crystal silicon nanoplate is modelled by a microscopic approach where the hole quantization effect and the spin-orbit coupling effect are taken into account. The visible anisotropic subband structures are calculated by solving self-consistently the stress-dependent 6×6 k.p Schrodinger equation with the Poisson equation. The strong mixing among heavy, light, and split-off holes is quantitatively assessed. The influences of the thickness and the temperature on the piezoresistive coefficient are quantitatively investigated by using the hole concentrations and the effective masses from the complex dispersion structure of the valence band with and without stresses. Our results show that the stress determines the extent to which the band is mixed. The hole quantization effect increases as the thickness decreases, and therefore the valence band is strongly reshaped, resulting in the size-dependent piezoresistivity of the silicon nanoplate. The piezoresistive coefficient increases almost 4 times as the thickness reduces from the bulk to 3 nm, exhibiting a promising application in mechanical sensors.
