Comparison of band-to-band tunneling models in Si and Si–Ge junctions

We compared several different band-to-band tunneling （BTBT） models with both Sentaurus and the two-dimensional full-band Monte Carlo simulator in Si homo-junctions and Si-Ge hetero-junctions. It was shown that in Si homo-junctions, different models could achieve similar results. However, in the Si-Ge hetero-junctions, there were significant differences among these models at high reverse biases （over 2 V）. Compared to the nonlocal model, the local models in Sentaurus underrated the BTBT rate distinctly, and the Monte Carlo method was shown to give a better approximation. Additionally, it was found that in the Si region near the interface of the Si-Ge hetero-junctions, the direct tunneling rates increased largely due to the interaction of the band structures of Si and Ge.

Erratum to“Tunneling Electrons Triggered Energy Transfer between Coherently Coupled Donor-Acceptor Molecules”

In the original publication of my article,“Tunneling Electrons Triggered Energy Transfer between Coherently Coupled Donor-Acceptor Molecules”,which was published in Chinese Journal of Chemical Physics,Vol.37,No.4,pages 497-504,I have identified an innegligible error that requires correction.I apologize for any inconvenience and appreciate the opportunity to clarify it in the following:Error Description:In page 499,since the words “FIG.2(b,d)”in line 78 are mentioned earlier than the words“FIG.1(a)”in line 82 in the submitted manuscript,the order of Figure 1 and Figure 2 are changed automatically in the official publication of the article,which makes the logical relationship of the article confused to a significant degree.

Tunneling Barrier Thickness Dependence of Spin Polarization of Ferromagnet in Magnetic Tunnel Junctions

For designing low-impedance magnetic tunnel junctions(MTJs),it has been found that tunneling magnetoresistance strongly correlates with the insulating barrier thickness,imposing a fundamental problem about the relationship between spin polarization of ferromagnet and the insulating barrier thickness in MTJs.Here,we investigate the influence of alumina barrier thickness on tunneling spin polarization(TSP)through a combination of theoretical calculations and experimental verification.Our simulating results reveal a significant impact of barrier thickness on TSP,exhibiting an oscillating decay of TSP with the barrier layer thinning.Experimental verification is realized on FeNi/AlO_(x)/Al superconducting tunnel junctions to directly probe the spin polarization of FeNi ferromagnet using Zeeman-split tunneling spectroscopy technique.These findings provide valuable insights for designs of high-performance spintronic devices,particularly in applications such as magnetic random access memories,where precise control over the insulating barrier layer is crucial.

Pseudospin-filter tunneling of massless Dirac fermions

The tunneling of the massless Dirac fermions through a vector potential barrier are theoretically investigated, wherethe vector potential can be introduced by very high and very thin (d-function) magnetic potential barriers. We showthat, distinct from the previously studied electric barrier tunneling, the vector potential barriers are more transparent forpseudospin-1/2 Dirac fermions but more obstructive for pseudospin-1 Dirac fermions. By tuning the height of the vectorpotential barrier, the pseudospin-1/2 Dirac fermions remain transmitted, whereas the transmission of the pseudospin-1Dirac fermions is forbidden, leading to a pseudospin filtering effect for massless Dirac fermions.

On Klein tunneling of low-frequency elastic waves in hexagonal topological plates

Incident particles in the Klein tunnel phenomenon in quantum mechanics can pass a very high potential barrier.Introducing the concept of tunneling into the analysis of phononic crystals can broaden the application prospects.In this study,the structure of the unit cell is designed,and the low frequency(<1 k Hz)valley locked waveguide is realized through the creation of a phononic crystal plate with a topological phase transition interface.The defect immunity of the topological waveguide is verified,that is,the wave can propagate along the original path in the cases of impurities and disorder.Then,the tunneling phenomenon is introduced into the topological valley-locked waveguide to analyze the wave propagation,and its potential applications(such as signal separators and logic gates)are further explored by designing phononic crystal plates.This research has broad application prospects in information processing and vibration control,and potential applications in other directions are also worth exploring.

3D-bioprinted tri-layered cellulose/collagen-based drug-eluting fillers for the treatment of deep tunneling wounds

Tunneling wounds create passageways underneath the skin surface with varying sizes and shapes and can have twists and turns,making their treatment extremely difficult.Available wound care solutions only cater to superficial wounds,and untreated tunneling wounds pose major health concerns.This study aims to fulfill this challenge by fabricating tunnel wound fillers(TWFs)made of natural polymers that mimic the dermal extracellular matrix.In this study,cellulose microfibers(CMFs)derived from banana stem and fish skin-derived collagen were used to formulate bio-inks with varying CMF contents(25,50,and 75 mg).Tri-layered(CMFs,primary and secondary collagen coatings),drug-eluting(Baneocin),and cell-laden(human mesenchymal stem cells)TWFs were three-dimensional(3D)-printed and extensively characterized.CMFs showed the most suitable rheological properties for 3D printing at 50 mg concentration.The Alamar Blue data showed significantly increased cell proliferation from Day 1 to Day 7,and scratch tests used to evaluate in vitro wound healing revealed that the best coverage of the wound area was achieved using CMFs in combination with collagen and alginate.Finally,the TWF showed promising capability and tunability in terms of wound shape and size upon testing on a chicken tissue model.The results demonstrate the tremendous potential of TWFs in treating deep tunneling wounds with unique advantages,such as patient-specific customization,good wound exudate absorption capability while releasing wound healing drugs,and the inclusion of stem cells for accelerated healing and tissue regeneration.

Assessing the dynamics of O_(2) desorption from cobalt phthalocyanine by in situ electrochemical scanning tunneling microscopy

We report here the in situ electrochemical scanning tunneling microscopy(ECSTM) study of cobalt phthalocyanine(CoPc)-catalyzed O_(2) evolution reaction(OER) and the dynamics of CoPc-O_(2) dissociation.The self-assembled CoPc monolayer is fabricated on Au(111) substrate and resolved by ECSTM in 0.1 M KOH electrolyte.The OH^(-)adsorption on CoPc prior to OER is observed in ECSTM images.During OER,the generated O_(2) adsorbed on Co Pc is observed in the CoPc monolayer.Potential step experiment is employed to monitor the desorption of OER-generated O_(2) from CoPc,which results in the decreasing surface coverage of CoPc-O_(2) with time.The rate constant of O_(2) desorption is evaluated through data fitting.The insights into the dynamics of Co-O_(2) dissociation at the molecular level via in situ imaging help understand the role of Co-O_(2) in oxygen reduction reaction(ORR) and OER.

Surface evolution of thermoelectric material KCu_(4)Se_(3) explored by scanning tunneling microscopy

Novel two-dimensional thermoelectric materials have attracted significant attention in the field of thermoelectric due to their low lattice thermal conductivity.A comprehensive understanding of their microscopic structures is crucial for driving further the optimization of materials properties and developing novel functional materials.Here,by using in situ scanning tunneling microscopy,we report the atomic layer evolution and surface reconstruction on the cleaved thermoelectric material KCu_(4)Se_(3) for the first time.We clearly revealed each atomic layer,including the naturally cleaved K atomic layer,the intermediate Se^(2-)atomic layer,and the Se^(-)atomic layer that emerges in the thermodynamic-stable state.Departing from the maj ority of studies that predominantly concentrate on macroscopic measurements of the charge transport,our results reveal the coexistence of potassium disorder and complex reconstructed patterns of selenium,which potentially influences charge carrier and lattice dynamics.These results provide direct insight into the surface microstructures and evolution of KCu_(4)Se_(3),and shed useful light on designing functional materials with superior performance.

Tunneling Electrons Triggered Energy Transfer between Coherently Coupled Donor-Acceptor Molecules

Energy transfer is ubiquitous in natural and artificial lightharvesting systems,and coherent energy transfer,a highly efficient energy transfer process,has been accepted to play a vital role in such systems.However,the energy oscillation of coherent energy transfer is exceedingly difficult to capture because of its evanescence due to the interaction with a thermal environment.Here a microscopic quantum model is used to study the time evolution of electrons triggered energy transfer between coherently coupled donoracceptor molecules in scanning tunneling microscope(STM).A series of topics in the plasmonic nanocavity(PNC)coupled donor-acceptor molecules system are discussed,including resonant and nonresonant coherent energy transfer,dephasing assisted energy transfer,PNC coupling strength dependent energy transfer,Fano resonance of coherently coupled donor-acceptor molecules,and polariton-mediated energy transfer.

Prediction of rock mass classification in tunnel boring machine tunneling using the principal component analysis (PCA)-gated recurrent unit (GRU) neural network

Due to the complexity of underground engineering geology,the tunnel boring machine(TBM)usually shows poor adaptability to the surrounding rock mass,leading to machine jamming and geological hazards.For the TBM project of Lanzhou Water Source Construction,this study proposed a neural network called PCA-GRU,which combines principal component analysis(PCA)with gated recurrent unit(GRU)to improve the accuracy of predicting rock mass classification in TBM tunneling.The input variables from the PCA dimension reduction of nine parameters in the sample data set were utilized for establishing the PCA-GRU model.Subsequently,in order to speed up the response time of surrounding rock mass classification predictions,the PCA-GRU model was optimized.Finally,the prediction results obtained by the PCA-GRU model were compared with those of four other models and further examined using random sampling analysis.As indicated by the results,the PCA-GRU model can predict the rock mass classification in TBM tunneling rapidly,requiring about 20 s to run.It performs better than the previous four models in predicting the rock mass classification,with accuracy A,macro precision MP,and macro recall MR being 0.9667,0.963,and 0.9763,respectively.In Class II,III,and IV rock mass prediction,the PCA-GRU model demonstrates better precision P and recall R owing to the dimension reduction technique.The random sampling analysis indicates that the PCA-GRU model shows stronger generalization,making it more appropriate in situations where the distribution of various rock mass classes and lithologies change in percentage.

An Empirical Direct Tunneling Current Expression for Ultra-Thin Oxide nMOSFETs

An empirical expression for the direct tunneling (DT) current is obtained.This expression can be used to calculate the DT current for nMOSFETs with ultra thin oxide when the oxide thickness is considered as an adjustable parameter.The results have good agreement with the experimental data.And the oxide thickness obtained is less than the value acquired from the capacitance voltage( C V )method.

Research on Tunneling Techniques in Virtual Private Networks

It is a trend of virtual private networks (VPNs) to be used for information exchange between enterprises, branches of enterprises and enterprises and their employees instead of traditional dial networks and leased lines. The tunneling technique is the key technique to implement VPN. In this paper, with the VPN implementation requirements in mind, we perform a comparative research on the existing tunneling protocols including GRE, L2TP, IPSec and IP/IP. We also propose an integrated scheme of tunneling mechanism that supports VPN under the current condition.

Fabrication and Characterization of Tunneling Current of Anodic Bonded Dry-Etched MEMS Tunneling Accelerometer

A tunneling accelerometer is fabricated and characterized based on the extension of the silicon-glass anodic-bonding and deep etching releasing process provided by Peking University.The tunneling current under open loop operation is tested in the air by HP4145B semiconductor analyzer,which verifies the presence of tunneling current and the exponential relationship between tunneling gap and tunneling current.The tunneling barrier is extrapolated to be from 1.182 to 2.177eV.The threshold voltages are tested to be 14～16V for most of the devices.The threshold voltages under -1,0,and +1g are tested,respectively,which shows the sensitivity of the accelerometer is about 87mV/g.

Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo Method

Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.

Needle-Tunneling法膜系自动设计

综述了Ｎｅｅｄｌｅ和Ｔｕｎｎｅｌｉｎｇ 法膜系自动设计的基本原理，举出它们的应用实例，并且指出一个优秀的光学膜系自动设计程序应该包括Ｎｅｅｄｌｅ 法、Ｔｕｎｎｅｌｉｎｇ 法和传统的优化方法。它们的结合和交叉使用，使我们有可能从单层膜开始设计任意光学性能的多层膜。

Direct Tunneling Currents Through Gate Dielectrics in Deep Submicron MOSFETs

A direct tunneling model through gate dielectric s in CMOS devices in the frame of WKB approximation is reported.In the model,an im proved one-band effective mass approximation is used for the hole quantization, where valence band mixing is taken into account.By comparing to the experiments, the model is demonstrated to be applicable to both electron and hole tunneling c urrents in CMOS devices.The effect of the dispersion in oxide energy gap on the tunneling current is also studied.This model can be further extended to study th e direct tunneling current in future high-k materials.

Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor

The tunneling field-effect transistor（TFET） is a potential candidate for the post-CMOS era.In this paper,a threshold voltage model is developed for this new kind of device.First,two-dimensional（2D） models are used to describe the distributions of potential and electric field in the channel and two depletion regions.Then based on the physical definition of threshold voltage for the nanoscale TFET,the threshold voltage model is developed.The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data.It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper.This threshold voltage model provides a valuable reference to TFET device design,simulation,and fabrication.

使用HTTP Tunneling技术实现穿透网络防火墙的通信

近年来,防火墙在网络中得到了广泛的应用。它能够比较有效地防范病毒与黑客的攻击,保护网络的安全。但是也带来了一些不利影响,使一些需要进行网络通信的应用软件系统不能正常工作。介绍一个解决方案,并且重点介绍通过HTTP Tunneling技术使用基于文本的HTTP协议传送二进制数据的方法。

Fabrication of an AlAs/In_(0.53)Ga_ ( 0.47)As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications

A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a peak current density Jp = 39.08kA/cm^2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm^2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.

Effectof Neutral Traps on Tunneling Current and SILC in Ultrathin Oxide Layer

The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.